公开(公告)号：US11231499B2

公开(公告)日：2022-01-25

申请号：US16783993

申请日：2020-02-06

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Vlad Novotny

IPC: G01S17/86 ,  G01S17/10 ,  G01S17/89 ,  G01S7/481 ,  F21K9/64 ,  H01S5/00 ,  H01S5/024 ,  F21V29/70 ,  G01S7/487 ,  H01S5/02212 ,  H01S5/343 ,  H01S5/40 ,  G01S17/931 ,  H01S5/02251 ,  H01S5/02325 ,  H01S5/028 ,  H01S5/22 ,  H01S5/02 ,  H01S5/02255 ,  H01S5/02345 ,  H01S5/02375

Abstract: A distance detecting system for use in an automotive application comprises a gallium and nitrogen containing laser diode disposed within an automotive light. The gallium and nitrogen containing laser diode is configured to emit a first light with a first peak wavelength. A wavelength conversion member is configured to produce a white light. A first sensing light signal is based on the first peak wavelength. One or more optical elements are configured to direct at least partially the white light to illuminate one or more target objects or areas and to transmit respectively the first sensing light signal for sensing at least one remote point. A detector is configured to detect reflected signals of the first sensing light signal to determine coordinates of the at least one remote point.

公开(公告)号：US11228158B2

公开(公告)日：2022-01-18

申请号：US16411955

申请日：2019-05-14

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring

IPC: H01S5/02 ,  H01S5/343

Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

公开(公告)号：US11199628B2

公开(公告)日：2021-12-14

申请号：US16672266

申请日：2019-11-01

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Vlad Novotny

IPC: G01S17/10 ,  G01S17/89 ,  G01S7/481 ,  F21K9/64 ,  H01S5/00 ,  H01S5/024 ,  F21V29/70 ,  G01S7/487 ,  H01S5/02212 ,  H01S5/343 ,  H01S5/40 ,  G01S17/86 ,  G01S17/931 ,  H01S5/02251 ,  H01S5/02325 ,  H01S5/028 ,  H01S5/22 ,  H01S5/02 ,  H01S5/02255 ,  H01S5/02345 ,  H01S5/02375

Abstract: The present disclosure provides a distance detection system having at least a gallium and nitrogen containing laser diode and a wavelength conversion member. The gallium and nitrogen containing laser diode is configured to emit a first laser beam with a first peak wavelength. The wavelength conversion member is configured to receive at least partially the first laser beam with the first peak wavelength and reemit a second light with a second peak wavelength that is longer than the first peak wavelength and to generate the white light mixed with the second peak wavelength and the first peak wavelength. The distance detecting system further includes one or more first optical elements configured to transmit a first sensing light signal, and a detector configured to detect reflected signals of the first sensing light signal.

公开(公告)号：US11177634B1

公开(公告)日：2021-11-16

申请号：US16871730

申请日：2020-05-11

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/343 ,  H01S5/227 ,  H01L21/02 ,  H01S5/042 ,  H01S5/32 ,  H01S5/10 ,  H01S5/30 ,  H01S5/22

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

公开(公告)号：US20210344164A1

公开(公告)日：2021-11-04

申请号：US17318896

申请日：2021-05-12

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Dan Steigerwald ,  Melvin McLaurin ,  Eric Goutain ,  Alexander Sztein ,  Po Shan Hsu ,  Paul Rudy ,  James W. Raring

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/042

Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

公开(公告)号：US11121772B2

公开(公告)日：2021-09-14

申请号：US15954493

申请日：2018-04-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H04B10/116 ,  H01S5/343 ,  G02B27/09 ,  H04B10/50 ,  H01S5/40 ,  H01S5/02251 ,  H01S5/00 ,  H01S5/22 ,  H04B10/572 ,  H01L33/00 ,  H04B10/564 ,  H04B10/524 ,  H04B10/60 ,  H01S5/02212 ,  H01S5/02 ,  H01S5/10 ,  H01S5/32 ,  H01S5/02216 ,  H01S5/20 ,  H01S5/026 ,  H01S5/042 ,  H04B10/114 ,  H01S5/02326 ,  H01S5/02345

Abstract: A smart light source configured for visible light communication. The light source includes a controller comprising a modem configured to receive a data signal and generate a driving current and a modulation signal based on the data signal. Additionally, the light source includes a light emitter configured as a pump-light device to receive the driving current for producing a directional electromagnetic radiation with a first peak wavelength in the ultra-violet or blue wavelength regime modulated to carry the data signal using the modulation signal. Further, the light source includes a pathway configured to direct the directional electromagnetic radiation and a wavelength converter optically coupled to the pathway to receive the directional electromagnetic radiation and to output a white-color spectrum. Furthermore, the light source includes a beam shaper configured to direct the white-color spectrum for illuminating a target of interest and transmitting the data signal.

公开(公告)号：US11121522B1

公开(公告)日：2021-09-14

申请号：US15789413

申请日：2017-10-20

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Hua Huang

IPC: H01S5/028 ,  H01S5/02 ,  H01S5/042 ,  H01S5/343 ,  H01S5/32 ,  H01S5/22 ,  H01S5/20

Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

公开(公告)号：US11101618B1

公开(公告)日：2021-08-24

申请号：US16796368

申请日：2020-02-20

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Paul Rudy

IPC: H01S5/042 ,  H01S3/16 ,  H01S5/40 ,  H01S5/02325 ,  H01S5/026 ,  H01S5/343 ,  F41H13/00 ,  H01S5/02208 ,  H01S5/323 ,  H01S5/32 ,  H01S5/22

Abstract: A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.

公开(公告)号：US11070031B2

公开(公告)日：2021-07-20

申请号：US16579252

申请日：2019-09-23

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Mathew Schmidt ,  Christiane Poblenz

IPC: H01S5/34 ,  H01S5/343 ,  H01L21/02 ,  B82Y20/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/227 ,  B28D5/00 ,  H01L21/467 ,  H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/40

Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.