公开(公告)号：US20220005527A1

公开(公告)日：2022-01-06

申请号：US16995718

申请日：2020-08-17

申请人： Crossbar, Inc.

发明人： Hagop Nazarian ,  Cung Vu

IPC分类号： G11C13/00 ,  G01R27/26

摘要： A semiconductor device includes two-terminal memory devices characterized by a range of program voltages and a first capacitance, wherein the two-terminal memory devices are coupled in parallel between ground and a first common node, a first capacitor having a second capacitance, coupled between ground and a second common node, a voltage source configured to provide an input voltage lower than the range of program voltages, a first operational amplifier including an inverting input, a non-inverting input, and an output, wherein the non-inverting input is coupled to the first voltage source, wherein the inverting input is coupled to a third common node, and wherein the output is coupled to a fourth common node, a first resistance device coupled between the third common node and the fourth common node, and wherein the first common node is coupled to the second common node and the third common node.

公开(公告)号：US20210342488A1

公开(公告)日：2021-11-04

申请号：US17354634

申请日：2021-06-22

申请人： CROSSBAR, INC.

发明人： George MINASSIAN

IPC分类号： G06F21/74

摘要： A secure integrated circuit comprises a lower logic layer, and one or more memory layers disposed above the lower logic layer. A security key is provided in one or more of the memory layers for unlocking the logic layer.

公开(公告)号：US20210314177A1

公开(公告)日：2021-10-07

申请号：US17223832

申请日：2021-04-06

申请人： CROSSBAR, INC.

发明人： Sung Hyun Jo ,  Hagop Nazarian ,  Sang Nguyen ,  Zhi Li

IPC分类号： H04L9/32 ,  G11C13/00

摘要： Stochastic or near-stochastic physical characteristics of resistive switching devices are utilized for generating data distinct to those resistive switching devices. The distinct data can be utilized for applications related to electronic identification. As one example, data generated from physical characteristics of resistive switching devices on a semiconductor chip can be utilized to form a distinct identifier sequence for that semiconductor chip, utilized for verification applications for communications with the semiconductor chip or utilized for generating cryptographic keys or the like for cryptographic applications.

公开(公告)号：US10964388B2

公开(公告)日：2021-03-30

申请号：US16168151

申请日：2018-10-23

申请人： Crossbar, Inc.

发明人： Sung Hyun Jo

IPC分类号： G11C13/00 ,  H01L27/24 ,  H01L45/00 ,  G11C11/56 ,  G11C11/16

摘要： Solid-state memory having a non-linear current-voltage (I-V) response is provided. By way of example, the solid-state memory can be a selector device. The selector device can be formed in series with a non-volatile memory device via a monolithic fabrication process. Further, the selector device can provide a substantially non-linear I-V response suitable to mitigate leakage current for the non-volatile memory device. In various disclosed embodiments, the series combination of the selector device and the non-volatile memory device can serve as one of a set of memory cells in a 1-transistor, many-resistor resistive memory cell array.

公开(公告)号：US20210066584A1

公开(公告)日：2021-03-04

申请号：US17097742

申请日：2020-11-13

申请人： Crossbar, Inc.

发明人： Sung Hyun Jo

IPC分类号： H01L45/00

摘要： Providing for a resistive switching memory device is described herein. By way of example, the resistive switching memory device can comprise a bottom electrode, a conductive layer, a resistive switching layer, and a top electrode. Further, two or more layers can be selected to mitigate mechanical stress on the device. In various embodiments, the resistive switching layer and conductive layer can be formed of compatible metal nitride or metal oxide materials having different nitride/oxide concentrations and different electrical resistances. Further, similar materials can mitigate mechanical stress on the resistive switching layer and a conductive filament of the resistive switching memory device.

公开(公告)号：US10608180B2

公开(公告)日：2020-03-31

申请号：US15676231

申请日：2017-08-14

申请人： Crossbar, Inc.

发明人： Sung Hyun Jo ,  Xianliang Liu ,  Xu Zhao ,  Zeying Ren ,  FNU Atiquzzaman ,  Joanna Bettinger ,  Fengchiao Joyce Lin

IPC分类号： H01L27/24 ,  H01L45/00

摘要： Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.

公开(公告)号：US10483462B1

公开(公告)日：2019-11-19

申请号：US15185256

申请日：2016-06-17

申请人： Crossbar, Inc.

发明人： Sung Hyun Jo ,  Xianliang Liu ,  Fnu Atiquzzaman

IPC分类号： H01L45/00 ,  G11C11/56

摘要： Providing for improved manufacturing of silver-based electrodes to facilitate formation of a robust metallic filament for a resistive switching device is disclosed herein. By way of example, a silver electrode can be embedded with a non-silver material to reduce surface energy of silver atoms of a silver-based conductive filament, increasing structural strength of the conductive filament within a resistive switching medium. In other embodiments, an electrode formed of a base material can include silver material to provide mobile particles for an adjacent resistive switching material. The silver material can drift or diffuse into the resistive switching material to form a structurally robust conductive filament therein.

公开(公告)号：US10388374B1

公开(公告)日：2019-08-20

申请号：US15591925

申请日：2017-05-10

申请人： Crossbar, Inc.

发明人： Mehdi Asnaashari ,  Hagop Nazarian ,  Lin Shih Liu

IPC分类号： G11C13/00 ,  H01L27/24 ,  H01L45/00 ,  H04L12/861

摘要： A non-volatile programmable circuit configurable to perform logic functions, is provided. The programmable circuit can employ two-terminal non-volatile memory devices to store information, thereby mitigating or avoiding disturbance of programmed data in the absence of external power. Two-terminal resistive switching memory devices having high current on/off ratios and fast switching times can also be employed for high performance, and facilitating a high density array. For look-up table applications, input/output response times can be several nanoseconds or less, facilitating much faster response times than a memory array access for retrieving stored data.

公开(公告)号：US10248333B1

公开(公告)日：2019-04-02

申请号：US15426298

申请日：2017-02-07

申请人： Crossbar, Inc.

发明人： Ruchirkumar Shah ,  Mehdi Asnaashari

IPC分类号： G06F3/06 ,  G06F12/1009

摘要： One potential result of differing characteristics for certain two-terminal memory (TTM) is that memory management techniques, such as logical-to-physical (L2P), can differ as well. Previous memory management techniques do not adequately leverage the advantages associated with TTM. For example, by identifying and leveraging certain advantageous characteristics of TTM, L2P tables can be designed to be smaller and more efficient. Moreover, other memory management operations such as wear-leveling, recovery from power loss, and so forth, can be more efficient.

公开(公告)号：US10224370B2

公开(公告)日：2019-03-05

申请号：US15451045

申请日：2017-03-06

申请人： Crossbar, Inc.

发明人： Sung Hyun Jo ,  Wei Lu

IPC分类号： H01L27/24 ,  H01L45/00 ,  G11C13/00

摘要： A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second electrode comprising at least a second metal material. In a specific embodiment, the device includes a buffer material disposed between the first electrode and the switching material. The buffer material provides a blocking region between the switching material and the first electrode so that the blocking region is substantially free from metal particles from the second metal material when a first voltage is applied to the second electrode.