摘要:
The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherein the mask comprises two or more of dot pattern groups in which the non-transmission pattern group is perpendicular to a scan directional axis, and the dot pattern groups are formed in a certain shape and comprise first non-transmission patterns that are not respectively arranged in a row in an axis direction perpendicular to the scan directional axis, and second non-transmission patterns that are formed in the same arrangement as the first non-transmission patterns, but are positioned in such a manner that the second non-transmission patterns are parallel to the first non-transmission patterns and vertical axis of the scan directional axis.
摘要:
A flat panel display which can adjust a white balance to a proper level without changing the sizes of driving TFT active layers, even when an identical driving voltage is applied. The flat panel display also can obtain an appropriate luminance and prevent a reduction of its life span by supplying an optimal amount of current to each sub-pixel. The flat panel display includes a plurality of pixels. Each of the pixels includes a plurality of sub-pixels. Each sub-pixel having a self-luminescent element and driving thin film transistors. Each of the driving thin film transistors has a semiconductor active layer with at least a channel region connected to each of the self-luminescent elements to supply current to each of the self-luminescent elements. The channel regions of the semiconductor active layers are arranged in different directions in at least two sub-pixels.
摘要:
Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G, and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and B unit pixels to embody red (R), green (G), and blue (B) colors, respectively, and each of the unit pixels including at least one transistor. Channel layers of the transistors of at least two unit pixels among the R, G, and B unit pixels have different current mobilities from one another. The R, G, B unit pixels includes transistors and the transistor of at least one unit pixel among the R, G, and B unit pixels includes the channel layer made of silicon layers of different film qualities.
摘要:
Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and B unit pixels to embody red (R), green (G) and blue (B) colors, respectively, and each of the unit pixels including at least one transistor. Channel layers of the transistors of at least two unit pixels among the R, G and B unit pixels have different current mobilities from one another. The R, G, B unit pixels includes transistors and the transistor of at least one unit pixel among the R, G and B unit pixels includes the channel layer made of silicon layers of different film qualities.
摘要:
The present invention relates to a fabrication method for polycrystalline silicon thin that is capable of providing uniform crystallization of polycrystalline silicon thin film by laser using a mask having a mixed structure of laser transmission regions and laser non-transmission regions, wherein the laser transmission regions exist asymmetrically on the basis of a laser scanning directional axis, and the laser transmission regions exist symmetrically on the basis of a certain central axis, and the laser transmission regions are shifted to a certain distance on the basis of another axis parallel to the certain central axis, so that the laser transmission regions and non laser transmission regions are alternately positioned.
摘要:
A crystallization method includes forming a black matrix layer that absorbs external light on an insulating substrate, wherein an upper region of the black matrix layer comprises a catalyst for silicon crystallization, patterning the black matrix layer, forming an amorphous silicon thin film on the insulating substrate and the black matrix layer, and thermally processing the amorphous silicon thin film for crystallization. A thin film transistor formed using the crystallization method has improved properties as a continuous metal-induced crystallization region and a metal-induced lateral crystallization region are formed therein without a definite boundary.
摘要:
An organic light emitting device that improves contrast by forming a gate wiring and a data wiring of a black matrix with a concentration gradient between a conductive material of high transmittance and a conductive material of high reflectivity. The organic light emitting device according to the present invention comprises a gate wiring and a data wiring formed on an insulating substrate, a pixel portion formed by the gate wiring and the data wiring, and a pixel arranged in the pixel portion, wherein at least one of the gate wiring and the data wiring is formed of a conductive light-absorbing material. At least one of the wirings is formed of a light-absorbing material with the concentration gradient between the conductive material of the high transmittance and the conductive material of the high reflectivity. The conductive material of the high reflectivity is composed of at least one of Al, Mo, Ti, Cu, Ag, or similar material, and the conductive material with high transmittance is composed of at least one of ITO, IO, TO, IZO, ZnO or similar material. The gate wiring includes a gate line, a gate electrode of a thin film transistor, a capacitor electrode, or a power line, and the data wiring includes a data line, source and drain electrodes of the thin film transistor, the capacitor electrode, or the power line.