公开(公告)号：US07280146B2

公开(公告)日：2007-10-09

申请号：US11180533

申请日：2005-07-14

申请人： Hidekazu Takahashi ,  Tetsunobu Kochi

发明人： Hidekazu Takahashi ,  Tetsunobu Kochi

IPC分类号： H04N5/225 ,  H04N5/335 ,  H04N3/14 ,  H04N9/04

CPC分类号： H04N5/2254 ,  H01L27/14627

摘要： In order to prevent an image quality from being lowered by shading and or the like, an image pickup apparatus is provided which includes an image pickup area including a plurality of photoelectric conversion areas, a plurality of converging lenses for converging light on a plurality of photoelectric conversion areas, and a light shielding area having a plurality of opening areas through which light is incident upon the plurality of photoelectric conversion areas, wherein positions of the converging lens and opening area are shifted inward than a corresponding photoelectric conversion area.

摘要翻译： 为了防止通过阴影等降低图像质量，提供了一种图像拾取装置，其包括包括多个光电转换区域的图像拾取区域，用于将光会聚在多个光电转换区域上的多个会聚透镜 转换区域和具有多个入射到多个光电转换区域的多个开口区域的遮光区域，其中会聚透镜和开口区域的位置比对应的光电转换区域向内移动。

公开(公告)号：US20070115377A1

公开(公告)日：2007-05-24

申请号：US11554281

申请日：2006-10-30

申请人： Tomoyuki Noda ,  Fumihiro Inui ,  Hidekazu Takahashi

发明人： Tomoyuki Noda ,  Fumihiro Inui ,  Hidekazu Takahashi

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/378 ,  H04N5/343 ,  H04N5/347 ,  H04N5/355

摘要： There is provided a solid-state image pickup device comprising a plurality of pixel units, each of which includes a photoelectric conversion element, a signal line which reads out signals from said plurality of pixel units, a first capacitor element which has a first electrode connected to the signal line, an amplifier which has an input terminal connected to a second electrode of the first capacitor element, and a second capacitor element connected between the input terminal and an output terminal of the amplifier, wherein the first capacitor element has a capacitance value which is smaller at the time of execution of an adding mode than at the time of execution of a non-adding mode, and thereby making an amplification factor of the amplifier smaller at the time of execution of the adding mode than at the time of execution of the non-adding mode.

摘要翻译： 提供一种固态摄像装置，包括多个像素单元，每个像素单元包括光电转换元件，从所述多个像素单元读出信号的信号线，第一电容器元件，其具有连接到第一电极的第一电极 信号线，具有连接到第一电容器元件的第二电极的输入端子的放大器和连接在放大器的输入端子和输出端子之间的第二电容器元件，其中第一电容器元件具有电容值 其在执行加法模式时比在执行非加法模式时更小，从而使执行加法模式时放大器的放大系数比执行时的放大系数小 的非添加模式。

公开(公告)号：US07164447B2

公开(公告)日：2007-01-16

申请号：US10361598

申请日：2003-02-11

申请人： Hidekazu Takahashi

发明人： Hidekazu Takahashi

IPC分类号： H04N5/232 ,  H04N5/335 ,  H04N5/238 ,  G03B3/10 ,  H01L31/062 ,  H01L31/06

CPC分类号： H01L31/11 ,  H01L27/14643

摘要： A solid state image pickup device is provided which can reduce crosstalks between range finding photoelectric conversion elements (AF sensor) and photometry photoelectric conversion elements (AE sensor). The solid state image pickup device has an n-type epitaxial semiconductor region, a p-type first well region formed in the semiconductor region, a p-type second well region formed in the semiconductor region and electrically separated from the first well, an n-type first impurity doped region formed in the first well region and an n-type second impurity doped region formed in the second well, wherein a photometry photoelectric conversion element is formed by using the p-type first well region and n-type first impurity doped region, and a range finding photoelectric element is formed by using the p-type second well region and n-type impurity doped region.

摘要翻译： 提供了可以减少测距光电转换元件（AF传感器）和测光光电转换元件（AE传感器）之间的串扰的固态图像拾取装置。 固态摄像装置具有n型外延半导体区域，形成在半导体区域中的p型第一阱区域，形成在半导体区域中并与第一阱电分离的p型第二阱区域，n 形成在第一阱区中的n型第一杂质掺杂区和形成在第二阱中的n型第二杂质掺杂区，其中通过使用p型第一阱区和n型第一杂质形成光度测量光电转换元件 掺杂区域，并且通过使用p型第二阱区域和n型杂质掺杂区域形成测距光电元件。

公开(公告)号：US20070001226A1

公开(公告)日：2007-01-04

申请号：US11449696

申请日：2006-06-09

申请人： Hidekazu Takahashi

发明人： Hidekazu Takahashi

IPC分类号： H01L27/12

CPC分类号： H01L27/13 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/1288 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device in which a first conductive layer included in a stack having a transistor and a second conductive layer over a substrate are electrically connected. The semiconductor device provides a s conductive layer for electrically connecting the first conductive layer included in the stack having the transistor (for example, a conductive layer provided on the same layer as a gate electrode included in the transistor, a conductive layer provided on the same layer as a source wiring or a drain wiring connected to a source or drain of the transistor, a conductive layer provided in the same layer as the wire connected to the source wiring or the drain wiring, or the like) and the second conductive layer (for example, a conductive layer functioning as an antenna or a connection wire) provided over the substrate.

摘要翻译： 本发明提供了一种半导体器件，其中包括在具有晶体管的堆叠中的第一导电层和在衬底上的第二导电层电连接。 半导体器件提供用于电连接包括在具有晶体管的堆叠中的第一导电层（例如，设置在与晶体管中包括的栅电极相同的层上的导电层，设置在同一层上的导电层） 作为连接到晶体管的源极或漏极的源极布线或漏极布线，设置在与连接到源极布线或漏极布线等的导线相同的层中的导电层）和第二导电层（用于 例如，设置在基板上的用作天线或连接线的导电层）。

公开(公告)号：US20060260675A1

公开(公告)日：2006-11-23

申请号：US11383645

申请日：2006-05-16

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/00

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

公开(公告)号：US07078668B2

公开(公告)日：2006-07-18

申请号：US10360927

申请日：2003-02-10

申请人： Kazuo Yamazaki ,  Hidekazu Takahashi

发明人： Kazuo Yamazaki ,  Hidekazu Takahashi

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H04N5/2351 ,  H04N5/23212 ,  H04N5/35518

摘要： A photoelectric conversion apparatus includes a photoelectric conversion element and a logarithmic conversion unit for converting a signal from the photoelectric conversion element to a logarithmically compressed voltage by means of a diode characteristic of p-n junction. The p-n junction in the logarithmic conversion unit is composed of any two terminals of the emitter, the base and the collector of the bipolar transistor, and a residual terminal of the transistor is connected to a semiconductor substrate.

公开(公告)号：US07014192B2

公开(公告)日：2006-03-21

申请号：US10173686

申请日：2002-06-18

申请人： Hidekazu Takahashi ,  Takashi Yanagisawa

发明人： Hidekazu Takahashi ,  Takashi Yanagisawa

IPC分类号： F16J15/54

CPC分类号： F16J15/3484

摘要： A plurality of seal units are provided between a seal housing and a rotating shaft. An inside seal unit, an outside seal unit, and at least one pair of intermediate seal units are aligned in an axial direction. The inside seal unit contacts fluid to be sealed. The outside seal unit contacts the atmosphere. The intermediate seal units are located between the inside seal unit and the outside seal unit. A plurality of chambers are defined by each of seal units. An intermediate liquid is supplied to the chambers. A pressure in an inside chamber is maintained lower than a pressure of the fluid to be sealed in a machine. Pressures in second and third chambers are maintained equal to or higher than the pressure of the fluid to be sealed.

公开(公告)号：US06952228B2

公开(公告)日：2005-10-04

申请号：US09973054

申请日：2001-10-10

申请人： Tomoya Yoneda ,  Shunsuke Inoue ,  Tetsunobu Kochi ,  Hidekazu Takahashi ,  Masanori Ogura

发明人： Tomoya Yoneda ,  Shunsuke Inoue ,  Tetsunobu Kochi ,  Hidekazu Takahashi ,  Masanori Ogura

IPC分类号： H04N5/335 ,  H04N3/15 ,  H04N9/04 ,  H04N3/14

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14645 ,  H04N5/3415 ,  H04N9/045 ,  H04N2209/048

摘要： An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.

公开(公告)号：US20050140917A1

公开(公告)日：2005-06-30

申请号：US11064517

申请日：2005-02-24

申请人： Hiroaki Miura ,  Hidekazu Takahashi

发明人： Hiroaki Miura ,  Hidekazu Takahashi

IPC分类号： B60J1/00 ,  B60J1/20 ,  C09K19/02 ,  E06B9/24 ,  G02F1/07 ,  G02F1/13 ,  G02F1/1334 ,  G02F1/137

CPC分类号： E06B9/24 ,  E06B2009/2464 ,  G02F1/07 ,  G02F1/137

摘要： A light-modulating material includes a transparent front surface layer, an intermediate layer including a liquid crystal forming an isotropic phase and a transparent back surface layer, laminated in this order.

摘要翻译： 光调制材料包括透明的前表面层，包含形成各向同性相的液晶的中间层和透明背表面层，依次层叠。

公开(公告)号：US06704051B1

公开(公告)日：2004-03-09

申请号：US09215170

申请日：1998-12-18

申请人： Hidekazu Takahashi

发明人： Hidekazu Takahashi

IPC分类号： H04N314

CPC分类号： G02B7/28 ,  H04N5/23212

摘要： To correct aberration generated in the optical system of an image pickup device on a photoelectric conversion device and correct light amount nonuniformity generated in the optical system, as the characteristic feature of the photoelectric conversion device, the aperture positions where photoelectric conversion is performed are different from each other in a photoelectric conversion area. The aperture ratio of the aperture region where photoelectric conversion is performed is changed in units of arrangement positions. The pitch of pixels is shifted to shift the position of the aperture region, or the pattern of a light-shielding layer is shifted stepwise to shift the position of the aperture region. Alternatively, the pitch of a pixel string in the horizontal or vertical direction is changed, and the pattern of the light-shielding layer is changed stepwise to shift the aperture position in both the horizontal and vertical directions in a plane.

摘要翻译： 为了校正在光电转换装置上的图像拾取装置的光学系统中产生的像差，并且校正光学系统中产生的光量不均匀性，作为光电转换装置的特征，进行光电转换的孔径位置不同于 彼此在光电转换区域。 进行光电转换的开口区域的开口率以排列位置为单位变化。 偏移像素的间距以偏移开口区域的位置，或者遮光层的图案被逐步移位以偏移开口区域的位置。 或者，水平或垂直方向上的像素串的间距改变，并且遮光层的图案被逐步改变以使平面中的水平和垂直方向的孔径位置偏移。