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公开(公告)号：US06469463B2
公开(公告)日：2002-10-22
申请号：US09814181
申请日：2001-03-22
申请人： Hui Chen , Shuji Endo
发明人： Hui Chen , Shuji Endo
IPC分类号： H02P612
摘要： There is provided a brushless motor and a driving control device therefor both of which can restrain the occurrence of current variations, torque variations and noise in the brushless motor, thereby constructing an electrically-operated power steering system of low noise and good steering feeling. In the driving control device for the brushless motor having a current variation rate control part which controls a current variation rate during commutation, and having plural excitation phases, the current variation rate control part terminates commutation transient time which is the time for which phase currents are in a transient state during a commutation operation, within ½ of commutation interval time which is the time required from the starting time of a certain commutation until the starting time of the next commutation.
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132.发明授权公开(公告)号：US06455431B1
公开(公告)日：2002-09-24
申请号：US09629329
申请日：2000-08-01
申请人： Chang Lin Hsieh , Hui Chen , Jie Yuan , Yan Ye
发明人： Chang Lin Hsieh , Hui Chen , Jie Yuan , Yan Ye
IPC分类号： H01L21302
CPC分类号： H01L21/31138 , G03F7/427
摘要： In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is disclosed for descumming residual photoresist material from areas where it is not desired after patterning of the photoresist. In another embodiment, a misaligned patterned photoresist is stripped from a semiconductor substrate surface. In particular, the method comprises exposing the semiconductor structure to a plasma generated from a source gas comprising NH3. A substrate bias voltage is utilized in both methods in order to produce anisotropic etching. In the descumming embodiment, the critical dimensions of the patterned photoresist are maintained. In the photoresist stripping embodiment, a patterned photoresist is removed without adversely affecting a partially exposed underlying layer of an organic dielectric.
摘要翻译： 通常，本公开涉及用于从半导体结构上的位置去除光致抗蚀剂的方法，其中其存在是不期望的。 在一个实施例中，公开了一种从光刻胶图形化之后不希望的区域去除残余光致抗蚀剂材料的方法。 在另一个实施例中，从半导体衬底表面剥离未对准的图案化光致抗蚀剂。 特别地，该方法包括将半导体结构暴露于由包含NH 3的源气体产生的等离子体。 为了产生各向异性蚀刻，在两种方法中均采用衬底偏置电压。 在除尘实施例中，维持图案化光致抗蚀剂的临界尺寸。 在光致抗蚀剂剥离实施例中，去除图案化的光致抗蚀剂，而不会有害地影响有机电介质的部分暴露的下层。
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公开(公告)号：US20170247733A2
公开(公告)日：2017-08-31
申请号：US15033711
申请日：2014-11-03
申请人： Xiaodan Yu , Hui Chen , Hongxue Wang , Xiaodan Yu
发明人： Hui Chen , Hongxue Wang
IPC分类号： C12P19/32
CPC分类号： C12P19/32 , C12P7/6436
摘要： A biosynthetic method of making carboxyl CoA from long-chain carboxylic acid including expressing an ACS in a cellular system, feeding a long chain carboxylic acid to the cellular system, growing the cellular system in a medium, and producing carboxyl CoA.
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公开(公告)号：US09646859B2
公开(公告)日：2017-05-09
申请号：US12771969
申请日：2010-04-30
申请人： Hui Chen , Allen L. D'Ambra , Sen-Hou Ko , Yufei Chen , Adrian Blank , Mario D. Silvetti , Gerald J. Alonzo , Lakshmanan Karuppiah
发明人： Hui Chen , Allen L. D'Ambra , Sen-Hou Ko , Yufei Chen , Adrian Blank , Mario D. Silvetti , Gerald J. Alonzo , Lakshmanan Karuppiah
IPC分类号： H01L21/67
CPC分类号： H01L21/67046 , H01L21/67051
摘要： Embodiments of the present invention relates to an apparatus and method for cleaning a substrate using a disk brush. One embodiment provides a substrate cleaner comprising a substrate chuck disposed in the processing volume, and a brush assembly disposed in the processing volume, wherein the brush assembly comprises a disk brush movably disposed opposing the substrate chuck, and a processing surface of the disk brush contacts a surface of the substrate on the substrate chuck.
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