公开(公告)号：US07492484B2

公开(公告)日：2009-02-17

申请号：US11076326

申请日：2005-03-10

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G06K15/00 ,  H04N1/40

CPC分类号： G03G15/5062 ,  G03G15/01 ,  G03G2215/00755 ,  G03G2215/0164

摘要： Even when an image signal is converted into an image signal with a limited amount of toner adhesion, the gradation is prevented from changing rapidly near the limiting value and therefore the image quality is prevented from deteriorating. An amount-of-adhesion converting circuit 301 converts image data for each color plane into first amount-of-toner-adhesion data. On the basis of a preset amount-of-toner-adhesion threshold value table, an amount-of-toner-adhesion reduction computing circuit 303 converts the first amount-of-toner-adhesion data for each color plane into second amount-of-toner-adhesion data with a limited amount of toner adhesion. Then, an image signal converting circuit 304 converts the second amount-of-toner-adhesion data into an image signal. In such a method, since parameters in the amount-of-toner-adhesion threshold value table are set arbitrarily, a rapid change in gradation can be suppressed near the limiting value.

摘要翻译： 即使当图像信号被转换成具有有限量的调色剂附着力的图像信号时，防止灰度在极限值附近快速变化，因此防止图像质量劣化。 粘合量转换电路301将每个色平面的图像数据转换为第一调色剂粘附数据。 基于预设的调色剂粘附阈值表，调色剂附着量计算电路303将每个色平面的第一调色剂附着数据转换成第二量调色剂附着阈值表， 调色剂粘附数据与调色剂附着力有限。 然后，图像信号转换电路304将第二调色剂粘附数据转换为图像信号。 在这种方法中，由于调色剂 - 附着阈值表中的参数被任意设定，所以在极限值附近可以抑制灰度的快速变化。

公开(公告)号：US06961150B2

公开(公告)日：2005-11-01

申请号：US09955188

申请日：2001-09-19

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G06K15/12 ,  H04N1/409 ,  G06K15/00

CPC分类号： H04N1/4092 ,  G06K15/1223

摘要： An image processing apparatus includes an edge detecting unit which identifies an area of given image data as a gradation sequence area and a character/line art area and which outputs edge information of the character/line art, a level converting unit which generates a strength modulation signal so as to emphasize an edge of the character/line art area, a laser driver which outputs a laser drive signal in order to form a picture dot larger than a standard size in response to the strength modulation signal. Further, according to the present invention, it is possible to print an image with emphasizing an edge portion of a character/line art by a laser printer.

摘要翻译： 图像处理装置包括边缘检测单元，其将给定图像数据的区域识别为灰度序列区域和字符/线条艺术区域，并且输出字符/线条图像的边缘信息;电平转换单元，其生成强度调制 信号以强调字符/线条艺术区域的边缘，激光驱动器，其响应于强度调制信号而输出激光驱动信号以形成大于标准尺寸的图像点。 此外，根据本发明，可以通过激光打印机来强调字符/线条艺术的边缘部分来打印图像。

公开(公告)号：US06462354B1

公开(公告)日：2002-10-08

申请号：US09575236

申请日：2000-05-22

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  H01L33/06 ,  H01S5/32341

摘要： There are provided a semiconductor light emitting device using high-quality and high-performance nitride III-V compound semiconductors which can reduce the threshold current density and operation voltage, and can shorten the emission wavelength to the ultraviolet range and a semiconductor device using nitride III-V compound semiconductors excellent in electric property and optical property and having a high band gap. In a GaN semiconductor light emitting device, desired layers among a plurality of semiconductor layers forming its light emitting structure are made of nitride III-V compound semiconductors containing B while limiting the B composition not higher than 0.3. More specifically, sequentially stacked on a c-plane sapphire substrate are, via a B0.05Ga0.95N buffer layer, a B0.05Ga0.95N layer, n-type B0.02Al0.03Ga0.95N cladding layer, n-type GaN optical guide layer, active layer having a MQW structure including quantum well layers of Ga0.85In0.15N, p-type B0.1Ga0.9N cap layer, p-type GaN optical guide layer, p-type B0.02Al0.03Ga0.95N cladding layer and p-type B0.02Ga0.96N contact layer.

摘要翻译： 提供了使用高质量和高性能的氮化物III-V化合物半导体的半导体发光器件，其可以降低阈值电流密度和操作电压，并且可以将发射波长缩短到紫外线范围，并且使用氮化物III的半导体器件 -V具有优异的电性能和光学性能并且具有高带隙的化合物半导体。 在GaN半导体发光器件中，形成其发光结构的多个半导体层中的期望层由含有B的氮化物III-V化合物半导体制成，同时限制B组成不高于0.3。 更具体地，依次层叠在c面蓝宝石衬底上，经由B0.05Ga0.95N缓冲层，B0.05Ga0.95N层，n型B0.02Al0.03Ga0.95N包层，n型GaN光电 引导层，具有MQW结构的有源层包括Ga0.85In0.15N的量子阱层，p型B0.1Ga0.9N覆盖层，p型GaN光导层，p型B0.02Al0.03Ga0.95N包层 层和p型B0.02Ga0.96N接触层。

公开(公告)号：US5633514A

公开(公告)日：1997-05-27

申请号：US570376

申请日：1995-12-11

申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成， 作为S，Se，Te。 在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

公开(公告)号：US5567960A

公开(公告)日：1996-10-22

申请号：US429850

申请日：1995-04-27

申请人： Akira Ishibashi ,  Satoshi Ito ,  Hiroyuki Okuyama ,  Kazushi Nakano ,  Kenji Kondo ,  Reiko Takeishi

发明人： Akira Ishibashi ,  Satoshi Ito ,  Hiroyuki Okuyama ,  Kazushi Nakano ,  Kenji Kondo ,  Reiko Takeishi

IPC分类号： H01L33/14 ,  H01L33/20 ,  H01L33/28 ,  H01S5/00 ,  H01S5/327 ,  H01L33/00 ,  H01S3/19

CPC分类号： H01L33/28 ,  H01S5/327

摘要： A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.

摘要翻译： II / VI化合物半导体发光器件的寿命可以延长。 II / VI化合物半导体发光器件包括有源层（4）和p侧覆层（6）。 p侧覆层（6）的有源层侧部（26）形成为轻掺杂区域或非掺杂区域。

公开(公告)号：US5375134A

公开(公告)日：1994-12-20

申请号：US232410

申请日：1994-04-25

申请人： Hiroyuki Okuyama ,  Katsuhiro Akimoto

发明人： Hiroyuki Okuyama ,  Katsuhiro Akimoto

IPC分类号： H01S5/04 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

CPC分类号： H01S5/327 ,  H01S5/041 ,  H01S5/3211 ,  H01S5/3213

摘要： A semiconductor laser has a first cladding layer of a first conductivity type, an active layer, and a second cladding layer of a second conductivity type, which are successively deposited on a semiconductor substrate by epitaxial growth. The first cladding layer and/or the second cladding layer is made of a compound semiconductor material of a zincblende crystal structure containing Mg.

摘要翻译： 半导体激光器具有第一导电类型的第一包层，有源层和第二导电类型的第二包覆层，其通过外延生长连续地沉积在半导体衬底上。 第一包层和/或第二包层由包含Mg的锌辉石晶体结构的化合物半导体材料制成。