公开(公告)号：US20150008487A1

公开(公告)日：2015-01-08

申请号：US14496285

申请日：2014-09-25

Applicant: International Business Machines Corporation

Inventor： Kevin K. Chan ,  John J. Ellis-Monaghan ,  David L. Harame ,  Qizhi Liu ,  John J. Pekarik

IPC: H01L29/808 ,  H01L29/73 ,  H01L29/161 ,  G06F17/50 ,  H01L29/16

CPC classification number: H01L29/8086 ,  G06F17/5045 ,  H01L27/0623 ,  H01L29/0817 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/1058 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/66893 ,  H01L29/66901 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/808

Abstract: Junction field-effect transistors and design structures for a junction field-effect transistor. A source and a drain of the junction field-effect transistor are comprised of a semiconductor material grown by selective epitaxy and in direct contact with a top surface of a semiconductor layer. A gate is formed that is aligned with a channel laterally disposed in the semiconductor layer between the source and the drain. The source, the drain, and the semiconductor layer are each comprised of a second semiconductor material having an opposite conductivity type from a first semiconductor material comprising the gate.

Abstract translation: 结场效应晶体管和结型场效应晶体管的设计结构。 结场效应晶体管的源极和漏极由通过选择性外延生长并与半导体层的顶表面直接接触的半导体材料组成。 形成与在源极和漏极之间横向设置在半导体层中的沟道对准的栅极。 源极，漏极和半导体层各自包括与包括栅极的第一半导体材料具有相反导电类型的第二半导体材料。

公开(公告)号：US20140284758A1

公开(公告)日：2014-09-25

申请号：US13847695

申请日：2013-03-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David L. Harame ,  Qizhi Liu

IPC: H01L29/73 ,  H01L29/66

CPC classification number: H01L29/735 ,  G06F17/5045 ,  H01L27/0823 ,  H01L29/0649 ,  H01L29/1004 ,  H01L29/1008 ,  H01L29/66234 ,  H01L29/66272 ,  H01L29/73 ,  H01L29/732

Abstract: Device structures, fabrication methods, and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an extrinsic base is formed that is arranged in juxtaposition with the intrinsic base on the substrate. The intrinsic base and terminal are respectively comprised of first and second semiconductor materials.

Abstract translation: 双极结型晶体管的器件结构，制造方法和设计结构。 在基板上形成本征基底，在本征基底上形成端子，并且形成与本征基底并列布置在基底上的非本征基底。 本征基极和端子分别由第一和第二半导体材料构成。

公开(公告)号：US20140217551A1

公开(公告)日：2014-08-07

申请号：US13757961

申请日：2013-02-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James S. Dunn ,  Qizhi Liu

IPC: H01L29/73 ,  G06F17/50 ,  H01L29/66

CPC classification number: H01L29/732 ,  G06F17/5045 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/7378

Abstract: Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a device region. A collector is formed in the device region, and a second isolation structure is formed in the device region. The second isolation structure defines a boundary for the collector. The second isolation structure is laterally positioned relative to the first isolation structure to define a section of the device region between the first and second isolation structures.

Abstract translation: 双极结型晶体管的器件结构，制造方法和设计结构。 在衬底中形成第一隔离结构以限定器件区域的边界。 在器件区域中形成集电极，在器件区域形成第二隔离结构。 第二个隔离结构定义了收集器的边界。 第二隔离结构相对于第一隔离结构横向定位，以限定第一和第二隔离结构之间的器件区域的一部分。

公开(公告)号：US08716837B2

公开(公告)日：2014-05-06

申请号：US13758204

申请日：2013-02-04

Applicant: International Business Machines Corporation

Inventor： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

IPC: H01L21/02 ,  H01L21/331

CPC classification number: H01L29/73 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0821 ,  H01L29/107 ,  H01L29/66272 ,  H01L29/7322

Abstract: Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An emitter opening extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer that physically links the extrinsic base and the intrinsic base together.

Abstract translation: 用于制造双极结型晶体管的方法，通过该方法制造的双极结型晶体管以及双极结型晶体管的设计结构。 双极结晶体管包括在本征基极上的电介质层和通过电介质层至少部分地与本征基极分离的外部基极。 发射极开口延伸穿过外部基极和电介质层。 电介质层相对于发射器开口横向凹入以限定内部基极和外部基极之间的腔。 空腔填充有将外部基极和内在基极物理连接在一起的半导体层。

公开(公告)号：US08513706B2

公开(公告)日：2013-08-20

申请号：US13672040

申请日：2012-11-08

Applicant: International Business Machines Corporation

Inventor： Erik M. Dahlstrom ,  Peter B. Gray ,  Qizhi Liu

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L29/7378 ,  H01L29/66242

Abstract: Heterojunction bipolar transistors with reduced base resistance, as well as fabrication methods for heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The heterojunction bipolar transistor includes a conductive layer between the intrinsic base and the extrinsic base. The conductive layer is comprised of a conductive material, such as a silicide, having a lower resistivity than the materials forming the intrinsic base and the extrinsic base.

Abstract translation: 具有降低的基极电阻的异质结双极晶体管，以及用于BiCMOS集成电路的异质结双极晶体管和设计结构的制造方法。 异质结双极晶体管包括在本征基极和外部基极之间的导电层。 导电层由诸如硅化物的导电材料构成，其电阻率低于形成本征碱和非本征基的材料。