摘要:
A method for accessing data safely, which is suitable for the electronic tag with low performance, is provided. The method comprises the following steps: when performing a data writing process, the first read-write device encrypts the message MSG and then writes the message in the electronic tag; when performing a data reading process, the second read-write device sends a data request packet to the electronic tag; the electronic tag sends a data response packet to the second read-write device according to the data request packet; the second read-write device sends a key request packet to a trusted third party; the trusted third party verifies the validity of the identity of the second read-write device according to the key request packet, and sends a key response packet to the second read-write device upon the verification is passed; the second read-write device obtains the plain text of the electronic tag message MSG according to the key response packet. This invention can realize the safe access of the data of the electronic tag with low performance.
摘要:
A photomultiplier tube including a photocathode, an electron multiplier, an electron collector, and a power lead, wherein the photocathode and the electron multiplier are disposed in a sealed transparent vacuum envelope, the electron collector and the power lead are connected with an external circuit outside the vacuum envelope, the photocathode is formed on the entire inner surface of the vacuum envelope, and the electron multiplier is located on the internal center of the vacuum envelope to receive photoelectrons from the photocathode in all directions for electrons multiplication. Because the effective photocathode area is increased, the detection efficiency of unit light-receiving area is improved.
摘要:
a photomultiplier tube including a photocathode, an electron multiplier, an electron collector, and a power lead, wherein the photocathode and the electron multiplier are disposed in a sealed transparent vacuum envelope, the electron collector and the power lead are connected with an external circuit outside the vacuum envelope, the photocathode is formed on the entire inner surface of the vacuum envelope, and the electron multiplier is located on the internal center of the vacuum envelope to receive photoelectrons from the photocathode in all directions for electrons multiplication. Because the effective photocathode area is increased, the detection efficiency of unit light-receiving area is improved.
摘要:
Various example embodiments are disclosed. According to one example embodiment, a high bandwidth, fine granularity variable gain amplifier (“VGA”) may comprise an attenuator, a gain block and a gain adjustment control. The attenuator may comprise at least one pair of attenuator differential input nodes and at least one pair of attenuator differential output nodes. The gain block may comprise at least one pair of gain block differential input nodes coupled to the at least one pair of attenuator differential output nodes and at least one pair of gain block differential output nodes. The gain adjustment control may be configured to adjust a gain of the gain block.
摘要:
A network device for processing data on a data network includes a plurality of ports, configured to receive data from a data network and to send processed data to the data network, a memory management unit configured store data on and retrieve data from the memory and a metering unit configured to police a flow of the processed data to be sent to the network device. The metering unit is configured to utilize a series of leaky bucket units, where tokens are added to each leaky bucket unit only when that particular leaky bucket unit is accessed. The metering unit is also configured to add the tokens based on a prior timestamp value, a current timing value and an established rate and a multiplication to establish the tokens is accomplished by shifting a register of the established rate.
摘要:
Current-controlled CMOS (C3MOS) fully differential integrated wideband amplifier/equalizer with adjustable gain and frequency response without additional power or loading. A novel approach is presented by which adjustable amplification and equalizer may be achieved using a C3MOS wideband data stage. This may be referred to as a C3MOS wideband data amplifier/equalizer circuit. This employs a wideband differential transistor pair that is fed using two separate transistor current sources. A switchable RC network is communicatively coupled between the sources of the individual transistors of the wideband differential transistor pair. There are a variety of means by which the switchable RC network may be implemented, including using a plurality of components (e.g., capacitors and resistors connected in parallel). In such an embodiment, each component may have an individual switch to govern its connectivity in the switchable RC network thereby allowing a broad range of amplification and equalization to be performed.
摘要:
A network device for processing data on a data network including a plurality of ports, configured to receive data from a data network and to send processed data to the data network via an egress port, a controller interface, configured to communicate with an external controller, a memory management unit, configured store data on and retrieve data from the memory and a metering unit, configured to police a flow of the processed data to be sent to the egress port. The metering unit further includes programmable registers, in communication with the controller interface, configured to be programmed through controller signals sent through the controller interface from the external controller, such at all aspects of the flow of the processed data may be controlled by the external controller.
摘要:
A heat sink assembly includes a heat sink and a clip assembly received in the heat sink. The clip assembly comprises a clip and a movable fastener pivotally connected to the clip via a pair of supporters. Each supporter defines a pivot hole deviated from a center thereof and a retaining slot above the pivot hole. The clip comprises a main body received in the heat sink and two arms extending from the main body and pivotally received in the retaining slots of the supporters. The movable fastener pivotally extends in the pivot holes of the supporters. The movable fastener moves relative to the heat sink and causes rotation of the supporters in a matter such that a distance from the main body of the clip to a bottom of the heat sink is changed, whereby the clip assembly can provide adjustable spring force acting on the heat sink.
摘要:
Various example embodiments are disclosed. According to one example embodiment, a high bandwidth, fine granularity variable gain amplifier (“VGA”) may comprise an attenuator, a gain block and a gain adjustment control. The attenuator may comprise at least one pair of attenuator differential input nodes and at least one pair of attenuator differential output nodes. The gain block may comprise at least one pair of gain block differential input nodes coupled to the at least one pair of attenuator differential output nodes and at least one pair of gain block differential output nodes. The gain adjustment control may be configured to adjust a gain of the gain block.
摘要:
Current-controlled CMOS (C3MOS) wideband input data amplifier for reduced differential and common-mode reflection. Impedance matching and bandwidth extension provides desired gain at higher frequencies and may be achieved at the interface between silicon and package and/or circuit board within various integrated circuits that may be employed within communication devices. In some instances, a differential transistor pair is employed that also includes Miller capacitors coupled between the gate of one transistor of the differential transistor pair to the drain of the other transistor of the differential transistor pair. This can also include series load connected resistors and inductors coupled between the respective drains of the transistors of the differential transistor pair to a power supply voltage. Also, series connected input inductors may also couple to the gates of the transistors of the differential transistor pair.