公开(公告)号：US20110005679A1

公开(公告)日：2011-01-13

申请号：US12502005

申请日：2009-07-13

Applicant: HIROJI HANAWA ,  Kartik Ramaswamy ,  Satoru Kobayashi

Inventor： HIROJI HANAWA ,  Kartik Ramaswamy ,  Satoru Kobayashi

IPC: H01L21/3065 ,  H05K3/07

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183

Abstract: Plasma process uniformity is controlled by maintaining near an optimum value an impedance of a ground return path for VHF source power from an overhead electrode through a workpiece support. A feedback control loop controls a variable reactance element of a reactive circuit that provides isolation between the VHF source power and a lower frequency bias power match circuit.

Abstract translation: 等离子体工艺均匀性通过保持靠近最佳值的方式来控制，该距离来自顶置电极通过工件支撑件的VHF源功率的接地返回路径的阻抗。 反馈控制回路控制提供VHF源功率与较低频偏置功率匹配电路之间的隔离的无功电路的可变电抗元件。

公开(公告)号：US07768765B2

公开(公告)日：2010-08-03

申请号：US11683994

申请日：2007-03-08

Applicant: Andrew Nguyen ,  Wing Lau Cheng ,  Hiroji Hanawa ,  Semyon L. Kats ,  Kartik Ramaswamy ,  Yan Ye ,  Kwok Manus Wong ,  Daniel J. Hoffman ,  Tetsuya Ishikawa ,  Brian C. Lue

Inventor： Andrew Nguyen ,  Wing Lau Cheng ,  Hiroji Hanawa ,  Semyon L. Kats ,  Kartik Ramaswamy ,  Yan Ye ,  Kwok Manus Wong ,  Daniel J. Hoffman ,  Tetsuya Ishikawa ,  Brian C. Lue

IPC: H01T23/00

CPC classification number: H01L21/67109

Abstract: A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.

Abstract translation: 用于衬底处理室的支撑件包括流体循环容器，其包括具有蛇形卷积的通道。 流体入口将传热流体供应到流体循环储存器，并且流体出口排出传热流体。 在一个版本中，频道翻倍翻转自己。

公开(公告)号：US20100136793A1

公开(公告)日：2010-06-03

申请号：US12623243

申请日：2009-11-20

Applicant: Zhigang Chen ,  Shahid Rauf ,  Walter R. Merry ,  Leonid Dorf ,  Kartik Ramaswamy ,  Kenneth S. Collins

Inventor： Zhigang Chen ,  Shahid Rauf ,  Walter R. Merry ,  Leonid Dorf ,  Kartik Ramaswamy ,  Kenneth S. Collins

IPC: H01L21/3065

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/3299 ,  H01L21/6833

Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.

Abstract translation: 在具有静电卡盘的等离子体反应器中，可以使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量来确定晶片电压，并且该晶片电压可用于精确地控制DC晶片钳位电压 。

公开(公告)号：US07700465B2

公开(公告)日：2010-04-20

申请号：US10646533

申请日：2003-08-22

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC: H01L21/26

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32412

Abstract: A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.

Abstract translation: 用于将物种离子注入到室中的工件的表面层中的方法包括将工件放置在由室侧壁和面向所述工件的室顶部以及室的一对端口之间限定的室的处理区域中 靠近处理区域大致相对的两侧，并通过腔室外部的导管连接在一起。 该方法还包括向腔室内引入包括待注入物种的工艺气体，并且还从工艺气体中产生等离子体电流并使等离子体电流在包括导管和处理区域的循环折返路径中振荡。

公开(公告)号：US07666464B2

公开(公告)日：2010-02-23

申请号：US10971772

申请日：2004-10-23

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

IPC: C23C14/48 ,  C23C14/54 ,  C23C16/52 ,  C23C16/505

CPC classification number: H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

Abstract: A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

Abstract translation: 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， ，然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。

公开(公告)号：US20100013572A1

公开(公告)日：2010-01-21

申请号：US12506658

申请日：2009-07-21

Applicant: STEVEN C. SHANNON ,  JANG GYOO YANG ,  MATTHEW L. MILLER ,  KARTIK RAMASWAMY ,  JAMES P. CRUSE

Inventor： STEVEN C. SHANNON ,  JANG GYOO YANG ,  MATTHEW L. MILLER ,  KARTIK RAMASWAMY ,  JAMES P. CRUSE

IPC: H03H7/38

CPC classification number: H03H7/38

Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

公开(公告)号：US20090298287A1

公开(公告)日：2009-12-03

申请号：US12129024

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: H01L21/3065 ,  H01L21/3205 ,  C23C16/505 ,  H01L21/31

CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/32935

Abstract: A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.

Abstract translation: 提供了一种用于通过与瞬态同步调制不匹配的低功率RF发生器的工件的等离子体处理中的方法来稳定等离子体以应用RF功率中的设计瞬变的方法。

公开(公告)号：US20090294061A1

公开(公告)日：2009-12-03

申请号：US12128926

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: C23C16/44 ,  C23F1/00

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32183

Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.

Abstract translation: 使用等离子体偏置功率或等离子体源功率的预定瞬变来处理诸如半导体晶片的工件的等离子体反应器具有与瞬变同步的无与伦比的低功率RF发生器，以使等离子体特性的瞬变诱发变化最小化。

公开(公告)号：US20090230089A1

公开(公告)日：2009-09-17

申请号：US12047492

申请日：2008-03-13

Applicant: KALLOL BERA ,  SHAHID RAUF ,  AJIT BALAKRISHNA ,  KENNETH S. COLLINS ,  KARTIK RAMASWAMY ,  HIROJI HANAWA

Inventor： KALLOL BERA ,  SHAHID RAUF ,  AJIT BALAKRISHNA ,  KENNETH S. COLLINS ,  KARTIK RAMASWAMY ,  HIROJI HANAWA

IPC: B01J19/08 ,  C23F1/00

CPC classification number: H01J37/32174 ,  H01J37/32009 ,  H01J37/32045 ,  H01J37/32091

Abstract: A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process.

Abstract translation: 公开了一种用于控制等离子体均匀性的方法和装置。 当蚀刻基板时，不均匀的等离子体可能导致基板的不均匀蚀刻。 阻抗电路可以减轻不均匀的等离子体以允许更均匀的蚀刻。 阻抗电路可以设置在室壁和地面之间，淋浴头和地面以及阴极罐和地面之间。 阻抗电路可以包括电感器和电容器中的一个或多个。 电感器的电感和电容器的电容可以被预先确定，以确保等离子体是均匀的。 此外，可以在处理期间或在处理步骤之间调整电感和电容以适应特定工艺的需要。

公开(公告)号：US07428915B2

公开(公告)日：2008-09-30

申请号：US11115956

申请日：2005-04-26

Applicant: Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

IPC: F16K11/052

CPC classification number: F16K1/526 ,  F16K1/22 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/87531

Abstract: A valve system having high maximum gas flow rate and fine control of gas flow rate, includes a valve housing for blocking gas flow through a gas flow path, a large area opening through said housing having a first arcuate side wall and a small area opening through said housing having a second arcuate side wall, and respective large area and small area rotatable valve flaps in said large area and small area openings, respectively, and having arcuate edges congruent with said first and second arcuate side walls, respectively and defining therebetween respective first and second valve gaps. The first and second valve gaps are sufficiently small to block flow of a gas on one side of said valve housing up to a predetermined pressure limit, thereby obviating any need for O-rings.

Abstract translation: 具有高的最大气体流量和气体流量的精细控制的阀门系统包括用于阻止气体流过气体流路的阀壳体，通过所述壳体的大面积开口具有第一弧形侧壁和小区域开口 所述壳体分别具有第二弧形侧壁和分别在所述大面积和小面积开口中的相应的大面积和小面积的可旋转阀瓣，并且分别具有与所述第一和第二弧形侧壁一致的弓形边缘，并且在其间限定各自的第一 和第二阀间隙。 第一和第二阀间隙足够小以阻止气体在所述阀壳体的一侧上的流动直到预定的压力极限，从而避免了对O形环的任何需要。