CURRENT GENERATION DEVICE
    141.
    发明申请

    公开(公告)号:US20210149430A1

    公开(公告)日:2021-05-20

    申请号:US17085493

    申请日:2020-10-30

    Inventor: Kuno Lenz

    Abstract: In an embodiment, a device for generating a first current from a second current, comprises: an output transistor configured to generate the first current; a first circuit configured to generate a third current representative of the second current and to draw it from a first node; a second circuit configured to generate a fourth current representative of the first current and to supply it to the first node; and a third circuit receiving a fifth current representative of a difference between the third and fourth currents, the third circuit being configured to generate a sixth current representative of the fifth current and to draw it from a control terminal of the output transistor.

    PROTECTION DEVICE
    142.
    发明申请

    公开(公告)号:US20210043622A1

    公开(公告)日:2021-02-11

    申请号:US16987066

    申请日:2020-08-06

    Inventor: Olivier ORY

    Abstract: The present disclosure provides an electronic device that includes a substrate. The substrate includes a well and a peripheral insulating wall laterally surrounding the well. At least one lateral bipolar transistor is formed in the well, and the at least one transistor has a base region extending under parallel collector and emitter regions. The peripheral insulating wall is widened in a first direction, parallel to the collector and emitter regions, so that the base region penetrates into the peripheral insulating wall.

    Control circuit for half-bridge diodes

    公开(公告)号:US10784787B2

    公开(公告)日:2020-09-22

    申请号:US14525460

    申请日:2014-10-28

    Abstract: A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.

    INTEGRATED CIRCUIT COMPRISING A THREE-DIMENSIONAL CAPACITOR

    公开(公告)号:US20200286886A1

    公开(公告)日:2020-09-10

    申请号:US16801038

    申请日:2020-02-25

    Abstract: The present disclosure concerns an integrated circuit comprising a substrate, the substrate comprising a first region having a first thickness and a second region having a second thickness smaller than the first thickness, the circuit comprising a three-dimensional capacitor formed inside and on top of the first region, and at least first and second connection terminals formed on the second region, the first and second connection terminals being respectively connected to first and second electrodes of the three-dimensional capacitor.

    Barium-strontium-titanium (BST) capacitor configuration method

    公开(公告)号:US10541088B2

    公开(公告)日:2020-01-21

    申请号:US15862707

    申请日:2018-01-05

    Inventor: Sylvain Charley

    Abstract: A capacitor has a variable capacitance settable by a bias voltage. A method for setting the bias voltage including the steps of: (a) injecting a constant current to bias the capacitor; (b) measuring the capacitor voltage at the end of a time interval; (c) calculating the capacitance value obtained at the end of the time interval; (d) comparing this value with a desired value; and (e) repeating steps (a) to (d) so as long as the calculated value is different from the set point value. When calculated value matches the set point value; the measured capacitor voltage is stored as a bias voltage to be applied to the capacitor for setting the variable capacitance.

    CONTROL OF AN ANODE-GATE THYRISTOR
    148.
    发明申请

    公开(公告)号:US20190214985A1

    公开(公告)日:2019-07-11

    申请号:US16240409

    申请日:2019-01-04

    Abstract: A circuit for controlling an anode-gate thyristor includes a first transistor that couples a thyristor gate to a first terminal to receive a potential lower than a potential of a second terminal connected to the thyristor anode. A control terminal of the first transistor is driven by a control signal which is positive with respect to the potential of the first terminal.

    Rectifying bridge control circuit
    150.
    发明授权

    公开(公告)号:US10284107B2

    公开(公告)日:2019-05-07

    申请号:US14956543

    申请日:2015-12-02

    Abstract: An AC/DC converter includes a first terminal and a second terminal to receive an AC voltage and a third terminal and a fourth terminal to deliver a DC voltage. A rectifying bridge is provided in the converter. A controllable switching or rectifying element has a control terminal configured to receive a control current. A first switch is coupled between a supply voltage and the control terminal to inject the control current. A second switch is coupled between the control terminal and a reference voltage to extract the control current. The first and second switches are selectively actuated by a control circuit.

Patent Agency Ranking