公开(公告)号：US20140319633A1

公开(公告)日：2014-10-30

申请号：US14330748

申请日：2014-07-14

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L43/10 ,  H01L27/22

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

Abstract translation: 存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁 层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层， 从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体 层和与第二铁磁体接触的盖层 c层。

公开(公告)号：US20140169087A1

公开(公告)日：2014-06-19

申请号：US14184955

申请日：2014-02-20

Applicant: SONY CORPORATION

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/16

CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02

Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

Abstract translation: 存储元件具有分层结构，包括具有垂直于磁化方向根据信息而变化的膜面的磁化的存储层，并且包括Co-Fe-B磁性层，通过施加磁化方向来改变磁化方向 分层结构的层叠方向上的电流以将信息记录在存储层中，具有垂直于成为存储在存储层中的信息的基底的膜面的磁化的磁化固定层和形成的中间层 并且设置在存储层和磁化固定层之间，第一氧化物层和第二氧化物层。

公开(公告)号：US08729649B2

公开(公告)日：2014-05-20

申请号：US13950370

申请日：2013-07-25

Applicant: Sony Corporation

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L29/82

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.

Abstract translation: 一种磁存储器件，包括在层表面上具有垂直磁化的存储层，其磁化方向根据信息而改变; 以及对存储层提供的参考层，并且是在层表面上具有垂直磁化的信息的基础，其中存储器件通过在电流流动时产生的自旋转矩反转存储层的磁化来存储信息 在由记忆层，非磁化层和参考层制成的层之间，存储层在记忆温度下的矫顽力为室温下的矫顽力的0.7倍以下，导热系数为 在层表面方向上形成在存储层的一侧的电极低于其周围的导热率。

公开(公告)号：US20130163316A1

公开(公告)日：2013-06-27

申请号：US13675725

申请日：2012-11-13

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/16

CPC classification number: G11C11/161 ,  Y10S977/933 ,  Y10S977/935

Abstract: A memory element has a layered configuration, including a memory layer in which a magnetization direction is changed corresponding to information; the magnetization direction being changed by applying a current in a lamination direction of the layered configuration to record the information in the memory layer, a magnetization-fixed layer in which a magnetization direction is fixed, an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, and a perpendicular magnetic anisotropy inducing layer, the memory layer including a first ferromagnetic layer, a first bonding layer, a second ferromagnetic layer, a second bonding layer and a third ferromagnetic layer laminated in the stated order.

Abstract translation: 存储元件具有分层结构，包括其中磁化方向根据信息而改变的存储层; 通过在分层结构的叠层方向上施加电流来改变磁化方向，以将信息记录在存储层中，磁化方向固定的磁化固定层，由非磁性材料形成的中间层 材料，并且设置在存储层和磁化固定层之间，以及垂直磁各向异性诱导层，所述存储层包括第一铁磁层，第一结合层，第二铁磁层，第二结合层和第三铁磁性层 层以所述顺序层压。

公开(公告)号：US20130141964A1

公开(公告)日：2013-06-06

申请号：US13680558

申请日：2012-11-19

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/16

CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02

Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

Abstract translation: 存储元件具有分层结构，包括具有垂直于磁化方向根据信息而变化的膜面的磁化的存储层，并且包括Co-Fe-B磁性层，通过施加磁化方向来改变磁化方向 分层结构的层叠方向上的电流以将信息记录在存储层中，具有垂直于成为存储在存储层中的信息的基底的膜面的磁化的磁化固定层和形成的中间层 并且设置在存储层和磁化固定层之间，第一氧化物层和第二氧化物层。

公开(公告)号：US20130140658A1

公开(公告)日：2013-06-06

申请号：US13684644

申请日：2012-11-26

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: H01L29/82

CPC classification number: H01L29/82 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a magnetic layer having a positive magnetostriction constant. The magnetization direction is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

Abstract translation: 存储元件包括分层结构和负热膨胀材料层。 分层结构包括存储层，磁化固定层和中间层。 存储层具有垂直于胶片面的磁化，其中磁化方向根据信息而改变，并且包括具有正的磁致伸缩常数的磁性层。 通过在分层结构的层叠方向上施加电流来将信息记录在存储层中来改变磁化方向。 磁化固定层具有垂直于成为存储在存储层中的信息的基础的膜面的磁化。 中间层由非磁性材料形成，并且设置在存储层和磁化固定层之间。

公开(公告)号：US20130139007A1

公开(公告)日：2013-05-30

申请号：US13681999

申请日：2012-11-20

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G06F12/02 ,  G06F11/16

CPC classification number: G06F12/0246 ,  G06F11/1064 ,  G06F11/1441 ,  G06F11/1666 ,  G06F12/0895 ,  G06F2212/222

Abstract: Disclosed is a nonvolatile cache memory including a nonvolatile memory part and a cache controller. The nonvolatile memory part is configured to store cache data. The cache controller is configured to control reading and writing of the cache data with respect to the nonvolatile memory part. Further, the cache controller is configured to perform, as a preparation for an interruption of power supply, standby preparation processing to generate standby state data and store the generated standby state data in the nonvolatile memory part. Further, the cache controller is configured to perform, at resumption of the power supply, restoration processing of the cache data stored in the nonvolatile memory part using the standby state data.

Abstract translation: 公开了包括非易失性存储器部分和高速缓存控制器的非易失性高速缓冲存储器。 非易失性存储器部件被配置为存储高速缓存数据。 高速缓存控制器被配置为控制关于非易失性存储器部分的高速缓存数据的读取和写入。 此外，高速缓存控制器被配置为执行用于中断电源的准备，备用准备处理以产生待机状态数据并将所生成的备用状态数据存储在非易失性存储器部分中。 此外，高速缓存控制器被配置为在恢复电源时，使用待机状态数据来执行存储在非易失性存储器部分中的高速缓存数据的恢复处理。