TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING FOUR MASKS
    141.
    发明申请
    TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING FOUR MASKS 失效
    TRENCH MOSFET和使用四个掩模的制造方法

    公开(公告)号:US20090085074A1

    公开(公告)日:2009-04-02

    申请号:US11866350

    申请日:2007-10-02

    Abstract: In accordance with the invention, a trench MOSFET semiconductor device is manufactured in accordance with a process comprising the steps of: providing a heavily doped N+ silicon substrate; utilizing a first mask to define openings for the trench gate and termination; utilizing a second mask as a source mask with openings determining the size and shape of a diffused source junction depth; utilizing a third mask as a contact mask to define contact hole openings; and utilizing a fourth mask as a metal mask, whereby only the first, second, third and fourth masks are utilized in the manufacture of the trench MOSFET semiconductor device.

    Abstract translation: 根据本发明,根据包括以下步骤的方法制造沟槽MOSFET半导体器件:提供重掺杂的N +硅衬底; 利用第一掩模来限定沟槽栅极和终端的开口; 利用第二掩模作为源掩模,其具有确定扩散源结深度的尺寸和形状的开口; 利用第三掩模作为接触掩模来限定接触孔开口; 并且利用第四掩模作为金属掩模,由此在制造沟槽MOSFET半导体器件中仅利用第一,第二,第三和第四掩模。

    Method for Fabricating Semiconductor Device Capable of Adjusting the Thickness of Gate Oxide Layer
    142.
    发明申请
    Method for Fabricating Semiconductor Device Capable of Adjusting the Thickness of Gate Oxide Layer 有权
    制造能够调节栅氧化层厚度的半导体器件的方法

    公开(公告)号:US20090042379A1

    公开(公告)日:2009-02-12

    申请号:US12187370

    申请日:2008-08-06

    Abstract: The present invention provides a method for fabricating semiconductor device, which is capable of adjusting a gate oxide layer thickness, including: providing a semiconductor substrate; growing a first oxide layer on a surface of the semiconductor substrate; patterning the first oxide layer to expose the first oxide layer corresponding to a gate to be formed; removing the exposed first oxide layer; immersing the substrate into deionized water to grow a second oxide layer; forming a polysilicon layer on the surfaces of the first oxide layer and the second oxide layer; and etching the polysilicon layer to form a gate. The method for fabricating semiconductor device according to the present invention, which is capable of adjusting the thickness of gate oxide layer, can control the thickness of gate oxide layer precisely to satisfy the requirement for different threshold voltages.

    Abstract translation: 本发明提供一种能够调整栅极氧化层厚度的半导体器件的制造方法,包括:提供半导体衬底; 在半导体衬底的表面上生长第一氧化物层; 图案化第一氧化物层以暴露与要形成的栅极对应的第一氧化物层; 去除暴露的第一氧化物层; 将基底浸入去离子水中以生长第二氧化物层; 在所述第一氧化物层和所述第二氧化物层的表面上形成多晶硅层; 并蚀刻多晶硅层以形成栅极。 根据本发明的半导体器件的制造方法,其能够调整栅氧化层的厚度,能够精确地控制栅氧化层的厚度,以满足不同阈值电压的要求。

    User-manipulated door mechanism for selectively covering an electrical socket
    143.
    发明申请
    User-manipulated door mechanism for selectively covering an electrical socket 有权
    用户操纵的门机构,用于选择性地覆盖电插座

    公开(公告)号:US20090032279A1

    公开(公告)日:2009-02-05

    申请号:US11890037

    申请日:2007-08-03

    CPC classification number: H05K5/0239 H02G3/14

    Abstract: A user-manipulated door mechanism is mounted on the faceplate of an electronic module for allowing user access to an electrical socket disposed inboard of a faceplate aperture. An inwardly extending rectangular shoulder formed along one edge of the door is rotatably mounted about an axis inboard of the faceplate, and is resiliently engaged by the free end of a cantilevered spring blade inboard of the faceplate. The spring blade engages a first face of the shoulder that is substantially parallel to the door when the door is in a closed position covering the socket, and a second face of the shoulder that is substantially perpendicular to the door when the door is in an open position uncovering the socket.

    Abstract translation: 用户操纵的门机构安装在电子模块的面板上,用于允许用户访问设置在面板孔内的电插座。 沿着门的一个边缘形成的向内延伸的矩形肩部围绕面板内侧的轴线可旋转地安装,并且通过面板内侧的悬臂弹簧片的自由端弹性地接合。 当门处于覆盖插座的关闭位置时,弹簧叶片接合肩部的基本上平行于门的第一面,以及当门处于打开状态时基本上垂直于门的第二面 位置揭开插座。

    MULTIBAND ANTENNA
    144.
    发明申请
    MULTIBAND ANTENNA 有权
    多天线天线

    公开(公告)号:US20090015487A1

    公开(公告)日:2009-01-15

    申请号:US12171428

    申请日:2008-07-11

    CPC classification number: H01Q9/42 H01Q5/371 H01Q5/385

    Abstract: A multiband antenna includes a long radiating branch, a short radiating branch, a short strip, a feed point, a grounding portion, a connecting portion, a long parasitic strip, and a short parasitic strip. The feed point, the long radiating branch, the short radiating branch, and the short strip are in a first plane. The grounding portion connects to the short strip. The connecting portion connects the long radiating branch, the short radiating branch, and the short strip. The long radiating branch, the short strip, and the connecting portion form a first inverted-L shaped antenna structure. The short radiating branch, the short strip, and the connecting portion form a second inverted-L shaped antenna structure. The long parasitic strip and the short parasitic strip are in a second plane and respectively connected to the grounding portion. The first plane is parallel to the second plane.

    Abstract translation: 多波段天线包括长辐射支路,短辐射支路,短条带,馈电点,接地部分,连接部分,长寄生条和短寄生条。 馈电点,长辐射支路,短辐射支路和短条带处于第一平面。 接地部分连接到短条。 连接部分连接长辐射支路,短辐射支路和短条。 长辐射分支,短条和连接部分形成第一倒L形天线结构。 短辐射支路,短条带和连接部分形成第二倒L形天线结构。 长寄生条和短寄生条在第二平面内分别连接到接地部分。 第一平面平行于第二平面。

    Generating A Base Curve Database To Reduce Storage Cost
    145.
    发明申请
    Generating A Base Curve Database To Reduce Storage Cost 失效
    生成基础曲线数据库以降低存储成本

    公开(公告)号:US20090013291A1

    公开(公告)日:2009-01-08

    申请号:US12212606

    申请日:2008-09-17

    CPC classification number: G06F17/5045

    Abstract: An enhanced library accessible by an EDA tool can include a base curve database and a plurality of curve data sets. Each curve data set refers to a standard cell having certain timing characteristics. To determine those timing characteristics, each curve data set identifies at least one base curve (in the base curve database) as well as a starting current, a peak current, a peak voltage, and a peak time. In one embodiment, each base curve can be normalized. The base curve(s), the starting current, peak current, peak voltage, and peak time can accurately model the functioning of the IC device, e.g. represented by an I(V) curve.

    Abstract translation: 由EDA工具可访问的增强库可以包括基线曲线数据库和多个曲线数据集。 每个曲线数据集是指具有某些定时特性的标准单元。 为了确定这些时序特性,每个曲线数据集识别至少一个基本曲线(在基线曲线数据库中)以及启动电流,峰值电流,峰值电压和峰值时间。 在一个实施例中,每个基本曲线可以被归一化。 基本曲线,起始电流,峰值电流,峰值电压和峰值时间可以精确地模拟IC器件的功能,例如, 由I(V)曲线表示。

    Intermediate Layout for Resolution Enhancement in Semiconductor Fabrication
    147.
    发明申请
    Intermediate Layout for Resolution Enhancement in Semiconductor Fabrication 有权
    半导体制造中分辨率增强的中间布局

    公开(公告)号:US20080216047A1

    公开(公告)日:2008-09-04

    申请号:US12099663

    申请日:2008-04-08

    CPC classification number: G06F17/5068 G03F1/36

    Abstract: Intermediate resolution-enhancement state layouts are generated based upon an original non-resolution enhanced layout of an integrated circuit and an associated resolution-enhanced layout. The intermediate resolution-enhancement state layout includes fragments corresponding to parts of the original layout and biases associated with the fragments, where the biases indicate distances between the fragments and the resolution-enhanced layout. The fragments are also assigned attributes such as fragment type, fragment location, and biases. The intermediate resolution-enhancement state layouts can be combined to generate the layout for a full chip IC. Two or more intermediate resolution-enhancement state layouts are assembled and are locally reconverged to adjust the resolution enhancement associated with the intermediate resolution-enhancement state layouts and obtain the intermediate resolution-enhancement state layouts for the full IC.

    Abstract translation: 基于集成电路的原始非分辨率增强布局和相关联的分辨率增强布局来生成中间分辨率增强状态布局。 中间分辨率增强状态布局包括对应于原始布局的部分和与片段相关联的偏移的片段,其中偏置指示片段之间的距离和分辨率增强布局。 片段还被分配了诸如片段类型,片段位置和偏差等属性。 中间分辨率增强状态布局可以组合以产生全芯片IC的布局。 组合两个或更多个中间分辨率增强状态布局并且被局部再变换以调整与中间分辨率增强状态布局相关联的分辨率增强,并获得用于全部IC的中间分辨率增强状态布局。

    Fault electric arc protection circuits and method for detecting fault electric arc
    148.
    发明申请
    Fault electric arc protection circuits and method for detecting fault electric arc 有权
    故障电弧保护电路及故障电弧检测方法

    公开(公告)号:US20080201021A1

    公开(公告)日:2008-08-21

    申请号:US11709064

    申请日:2007-02-21

    CPC classification number: H02H1/0015

    Abstract: The present invention relates to an fault electric arc protection circuits which comprising a power source, a signal sampling device, a signal processing module, an arc detection control device and a power cut-off module; the signal sampling device comprising a matching resistor R3 and a current transformer without iron core; the signal processing module comprising a rectifying tube D1 and a voltage divider R2; the arc detection control device is a SCM; the power cut-off module comprising a set of audion that orderly connected, and an actuator portion; one end of the current transformer is grounded and the other end is connected to the rectifying tube D1 thus to connect to the SCM; the matching resistor R3 is parallelly connected between the rectifying tube D1 and the current transoformer, and the voltage divider R2 is parallelly connected between the rectifying tube D1 and the SCM. This invention also provides a method for detecting arc-fault, comprising the steps of S1, sampling the current signal of the circuits to be protected in real time, and outputting the sampled signal; S2, processing the sampled signal, then outputting the processed result; S3, detecting the processed result, and then determining whether an arc symbol has occurred based on the detected result. The advantages of the present invention is, when using the electric equipment, once a continuous fault electric arc occurred in the wires, the protection circuits can detect the fault electric arc and cut off the power, thus to prevent the fire caused by the fault electric arc.

    Abstract translation: 本发明涉及一种故障电弧保护电路,其包括电源,信号采样装置,信号处理模块,电弧检测控制装置和电源切断模块; 所述信号采样装置包括匹配电阻器R 3和不带铁芯的电流互感器; 所述信号处理模块包括整流管D 1和分压器R 2; 电弧检测控制装置是SCM; 所述断电模块包括有序连接的一组听觉和致动器部分; 电流互感器的一端接地,另一端连接到整流管D1,从而连接到SCM; 整流管D1和电流变压器之间并联连接匹配电阻R 3 3,分压器R 2 2并联连接在整流管D1和 SCM。 本发明还提供一种检测电弧故障的方法,包括以下步骤:对实时保护的电路的当前信号进行采样,并输出采样信号; S 2,处理采样信号,然后输出处理结果; S 3,检测处理结果,然后基于检测结果确定是否发生了弧形符号。 本发明的优点是,当使用电气设备时,一旦连续的故障电弧发生在电线中,保护电路就可以检测故障电弧并切断电源,从而防止故障电 弧。

    Device, method and system for implementing an echo control on hand-free phones
    149.
    发明申请
    Device, method and system for implementing an echo control on hand-free phones 审中-公开
    用于在免提电话上实现回声控制的装置,方法和系统

    公开(公告)号:US20080161068A1

    公开(公告)日:2008-07-03

    申请号:US11896468

    申请日:2007-08-31

    CPC classification number: H04M9/082

    Abstract: This invention provides a device, method and system for implementing an echo control on hand-free phones, including an echo eliminator as a primary component. The method in use is listed as follows.First of all, local speech signals on a sending channel as well as remote speech signals on a receiving channel are sampled. Then call status of a current network is determined based on energy of the obtained remote and local speech signals samples. Finally, a corresponding echo control treatment to the speech signals traveling through the sending channel according to the resulting call status is given. As a result, the echo in a digital hand-free communication system can be efficiently eliminated.

    Abstract translation: 本发明提供了一种用于在免提电话上实现回波控制的装置,方法和系统,包括回波消除器作为主要部件。 使用的方法如下。 首先,对发送信道上的本地语音信号以及接收信道上的远程语音信号进行采样。 然后根据获得的远程和本地语音信号样本的能量来确定当前网络的呼叫状态。 最后,给出了根据所得到的呼叫状态对通过发送信道行进的语音信号的对应的回声控制处理。 结果,可以有效地消除数字无人通信系统中的回波。

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