公开(公告)号：US08222680B2

公开(公告)日：2012-07-17

申请号：US10274961

申请日：2002-10-22

Applicant: Ming-Ren Lin ,  Judy Xilin An ,  Zoran Krivokapic ,  Cyrus E. Tabery ,  Haihong Wang ,  Bin Yu

Inventor： Ming-Ren Lin ,  Judy Xilin An ,  Zoran Krivokapic ,  Cyrus E. Tabery ,  Haihong Wang ,  Bin Yu

IPC: H01L29/72

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/66818

Abstract: A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.

Abstract translation: 双栅极金属氧化物半导体场效应晶体管（MOSFET）包括鳍状物，第一栅极和第二栅极。 第一个门形成在鳍的顶部。 第二个门围绕翅片和第一个门。 在另一实施方案中，三栅极MOSFET包括鳍片，第一栅极，第二栅极和第三栅极。 第一个门形成在鳍的顶部。 第二个门形成在翅片附近。 第三栅极形成在翅片附近并与第二栅极相对。

公开(公告)号：US20120063393A1

公开(公告)日：2012-03-15

申请号：US13203446

申请日：2009-09-25

Applicant: Zhongda Du ,  Rui Ma ,  Bin Yu

Inventor： Zhongda Du ,  Rui Ma ,  Bin Yu

IPC: H04W72/04

CPC classification number: H04W74/008 ,  H04W36/0077 ,  H04W74/0833

Abstract: The present invention discloses a method and terminal for selecting a random access resource, the method includes: the terminal receives the physical downlink control channel signaling sent by a system; the terminal determines the first subframe which meets a condition A and contains a random access resource from the subsequent subframes of the subframe receiving the physical downlink control channel signaling, the condition A is that the time difference between the first subframe and the subframe receiving the physical downlink control channel signaling is greater than or equal to k, k is the time delay defined by the physical layer of the terminal; and the terminal starts a selection on the subframe containing a random access source from the first subframe.

Abstract translation: 本发明公开了一种选择随机接入资源的方法和终端，该方法包括：终端接收系统发送的物理下行控制信道信令; 终端确定满足条件A的第一子帧，并且从接收物理下行链路控制信道信令的子帧的后续子帧中包含随机接入资源，条件A是第一子帧与接收物理的子帧之间的时间差 下行控制信道信令大于或等于k，k是由终端的物理层定义的时延; 并且终端从包含来自第一子帧的随机接入源的子帧开始选择。

公开(公告)号：US20120004893A1

公开(公告)日：2012-01-05

申请号：US12556591

申请日：2009-09-10

Applicant: Akhileswar Ganesh VAIDYANATHAN ,  Stephen D. PRIOR ,  Jijun Wang ,  Bin Yu

Inventor： Akhileswar Ganesh VAIDYANATHAN ,  Stephen D. PRIOR ,  Jijun Wang ,  Bin Yu

IPC: G06G7/58 ,  G06G7/48 ,  G06F17/30

CPC classification number: G06K9/6231 ,  G06F19/326 ,  G06F19/3456 ,  G06K9/00147 ,  G06K9/62 ,  G06K2209/05 ,  G06N3/02 ,  G06N3/126 ,  G06N5/003 ,  G06N7/005 ,  G16H50/50 ,  G16H50/70

Abstract: The present invention relates to a method for the automatic identification of at least one informative data filter from a data set that can be used to identify at least one relevant data subset against a target feature for subsequent hypothesis generation, model building and model testing. The present invention describes methods, and an initial implementation, for efficiently linking relevant data both within and across multiple domains and identifying informative statistical relationships across this data that can be integrated into agent-based models. The relationships, encoded by the agents, can then drive emergent behavior across the global system that is described in the integrated data environment.

Abstract translation: 本发明涉及一种用于从数据集中自动识别至少一个信息数据过滤器的方法，该数据集可用于识别针对目标特征的至少一个相关数据子集用于随后的假设生成，模型构建和模型测试。 本发明描述了用于有效地链接多个域内和跨多个域之间的相关数据的方法和初始实现，并且识别可跨越基于代理的模型的该数据之间的信息性统计关系。 然后由代理编码的关系可以在集成数据环境中描述的全局系统中驱动紧急行为。

公开(公告)号：US20110110262A1

公开(公告)日：2011-05-12

申请号：US13003144

申请日：2009-06-30

Applicant: Bin Yu ,  Zhongda Du

Inventor： Bin Yu ,  Zhongda Du

IPC: H04L12/26

CPC classification number: H04L1/0025 ,  H04L1/1607 ,  H04L1/1854

Abstract: A downlink receiving status feedback method is disclosed. The method comprises: a control parameter, which is used for indicating a feedback mode used by a terminal for feeding back downlink receiving status, is carried in a radio resource control (RRC) signaling which is transmitted to the terminal (1) by a base station (2). The terminal feeds data receiving status corresponding to PDSCHs in multiple downlink sub-frames back to the base station in one uplink sub-frame according to the current feedback mode, current configurations of uplink sub-frames and downlink sub-frames, and an uplink feedback timing relation defined by a system.

Abstract translation: 公开了一种下行接收状态反馈方法。 该方法包括：用于指示终端用于反馈下行链路接收状态的反馈模式的控制参数在无线电资源控制（RRC）信令中承载，无线电资源控制（RRC）信令通过基站 车站（2）。 终端根据当前反馈模式，上行链路子帧和下行链路子帧的当前配置以及上行链路反馈，在一个上行链路子帧中向多个下行链路子帧中的PDSCH发送与PDSCH相对应的数据接收状态 系统定义的时序关系。

公开(公告)号：US20110058572A1

公开(公告)日：2011-03-10

申请号：US12934646

申请日：2008-09-03

Applicant: Zhongda Du ,  Bin Yu

Inventor： Zhongda Du ,  Bin Yu

IPC: H04L12/43

CPC classification number: H04W74/006 ,  H04W8/26 ,  H04W74/0833

Abstract: The invention discloses a method for generating a group identifier of the random access response message. The group identifier is determined according to the serial number of the subframe in which the random access time slot of random access preamble message transmitted by the terminal lies and the serial number of the random access channel in which the random access time slot lies. A random access method and a random access response method in a cellular radio communication system are also provided. Using the method of the present invention, the terminal needs not acquire the absolute system time of the cellular system in which the random access time slot lies, and can access the cellular radio communication system rapidly and accurately.

Abstract translation: 本发明公开了一种用于生成随机接入响应消息的组标识符的方法。 根据由终端发送的随机接入前导消息的随机接入时隙所在的子帧的序列号和随机接入时隙所在的随机接入信道的序列号，确定组标识符。 还提供了蜂窝无线电通信系统中的随机接入方法和随机接入响应方法。 使用本发明的方法，终端不需要获取随机接入时隙所在的蜂窝系统的绝对系统时间，并且可以快速，准确地接入蜂窝无线电通信系统。

公开(公告)号：US20100241599A1

公开(公告)日：2010-09-23

申请号：US12792614

申请日：2010-06-02

Applicant: Bin Yu ,  Fei Zhang

Inventor： Bin Yu ,  Fei Zhang

IPC: G06F15/18 ,  G06F17/30

CPC classification number: G06Q30/02 ,  G06Q10/00

Abstract: A method for classifying users is provided, which includes obtaining user attribute information of a user, matching the user attribute information with pre-determined user groups and/or pre-determined characters, and classifying the user into a user group and/or character that is matched successfully. A device for classifying users, a method for collecting and analyzing behaviors, and a system for collecting and analyzing behaviors are also provided.

Abstract translation: 提供了一种用于分类用户的方法，包括获取用户的用户属性信息，将用户属性信息与预定用户组和/或预定字符进行匹配，并将用户分类为用户组和/或字符， 匹配成功。 还提供了用于对用户进行分类的设备，用于收集和分析行为的方法以及用于收集和分析行为的系统。

公开(公告)号：US07781810B1

公开(公告)日：2010-08-24

申请号：US11538217

申请日：2006-10-03

Applicant: Judy Xilin An ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

Inventor： Judy Xilin An ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

IPC: H01L29/72

CPC classification number: H01L29/7855 ,  H01L21/823821 ,  H01L29/42384 ,  H01L29/7843 ,  H01L29/78684

Abstract: A device includes a fin, a first gate and a second gate. The first gate is formed adjacent a first side of the fin and includes a first layer of material having a first thickness and having an upper surface that is substantially co-planar with an upper surface of the fin. The second gate is formed adjacent a second side of the fin opposite the first side and includes a second layer of material having a second thickness and having an upper surface that is substantially co-planar with the upper surface of the fin, where the first thickness and the second thickness are substantially equal to a height of the fin.

Abstract translation: 一种装置包括鳍片，第一栅极和第二栅极。 第一门形成在鳍片的第一侧附近，并且包括具有第一厚度并且具有与鳍片的上表面基本共面的上表面的第一材料层。 所述第二浇口邻近所述翅片的与所述第一侧相对的第二侧形成，并且包括具有第二厚度并具有与所述翅片的上表面基本共面的上表面的第二材料层，其中所述第一厚度 并且第二厚度基本上等于翅片的高度。

公开(公告)号：US07479387B2

公开(公告)日：2009-01-20

申请号：US11590541

申请日：2006-10-31

Applicant: Christoph Benning ,  Sherrie Lea Sanda ,  Bin Yu

Inventor： Christoph Benning ,  Sherrie Lea Sanda ,  Bin Yu

IPC: C12N1/20 ,  C12N15/00 ,  C12N5/00 ,  C12Q1/00 ,  C12Q1/68 ,  C12P21/04 ,  C07H21/04 ,  C12Q1/48 ,  C12N9/00

CPC classification number: C12P19/42

Abstract: The present invention is directed to compositions and methods related to the synthesis and modification of uridine-5′-diphospho-sulfoquinovose (UDP-SQ). In particular, the methods of the present invention comprise the utilization of recombinant enzymes from Arabidopsis thaliana, UDP-glucose, and a sulfur donor to synthesize UDP-SQ, and the subsequent modification of UDP-SQ to form compounds including, but not limited to, 6-sulfo-α-D-quinovosyl diaclyglycerol (SQDG) and alkyl sulfoquinovoside. The compositions and methods of the invention provide a more simple, rapid means of synthesizing UDP-SQ, and the subsequent modification of UDP-SQ to compounds including, but not limited to, SQDG.

Abstract translation: 本发明涉及与尿苷-5'-二磷酸 - 磺基奎诺糖（UDP-SQ）的合成和修饰相关的组合物和方法。 特别地，本发明的方法包括利用来自拟南芥，UDP-葡萄糖和硫供体的重组酶合成UDP-SQ，以及后续的UDP-SQ修饰以形成化合物，包括但不限于 ，6-磺基-α-D-喹喔啉基二甘油（SQDG）和烷基磺基喹诺酮。 本发明的组合物和方法提供了一种更简单，快速的方法来合成UDP-SQ，以及随后将UDP-SQ修饰为化合物，包括但不限于SQDG。

公开(公告)号：US07417250B1

公开(公告)日：2008-08-26

申请号：US11151550

申请日：2005-06-14

Applicant: James F. Buller ,  Derick J Wristers ,  Qi Xiang ,  Bin Yu

Inventor： James F. Buller ,  Derick J Wristers ,  Qi Xiang ,  Bin Yu

IPC: H01L29/04

CPC classification number: H01L21/823807 ,  H01L29/1054

Abstract: A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the strained-silicon layer initially can have the same thickness. A p-channel transistor is formed over the first portion, and a n-channel transistor is formed over the second portion. A semiconductor device is also disclosed.

Abstract translation: 制造半导体器件的方法包括在硅锗层上提供应变硅半导体层，并部分去除应变硅层的第一部分。 应变硅层包括第一部分和第二部分，第二部分的厚度大于第一部分的厚度。 最初，应变硅层的第一和第二部分最初可以具有相同的厚度。 在第一部分上形成p沟道晶体管，并且在第二部分上形成n沟道晶体管。 还公开了一种半导体器件。

公开(公告)号：US07416925B2

公开(公告)日：2008-08-26

申请号：US11677404

申请日：2007-02-21

Applicant: Ming-Ren Lin ,  Bin Yu

Inventor： Ming-Ren Lin ,  Bin Yu

IPC: H01L21/00

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/78687

Abstract: A semiconductor device includes a substrate and an insulating layer on the substrate. The semiconductor device also includes a fin structure formed on the insulating layer, where the fin structure includes first and second side surfaces, a dielectric layer formed on the first and second side surfaces of the fin structure, a first gate electrode formed adjacent the dielectric layer on the first side surface of the fin structure, a second gate electrode formed adjacent the dielectric layer on the second side surface of the fin structure, and a doped structure formed on an upper surface of the fin structure in the channel region of the semiconductor device.

Abstract translation: 半导体器件包括衬底和衬底上的绝缘层。 半导体器件还包括形成在绝缘层上的翅片结构，其中鳍结构包括第一和第二侧表面，形成在鳍结构的第一和第二侧表面上的电介质层，形成在电介质层附近的第一栅电极 在翅片结构的第一侧表面上形成与鳍结构的第二侧表面上的电介质层相邻的第二栅电极，以及在半导体器件的沟道区中形成在鳍结构的上表面上的掺杂结构 。