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    Display device
    151.
    发明授权
    Display device 有权

    公开(公告)号：US12105384B2

    公开(公告)日：2024-10-01

    申请号：US18380817

    申请日：2023-10-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroyuki Miyake ,  Makoto Kaneyasu

    IPC: H01L29/786 ,  G02F1/1343 ,  G02F1/1362 ,  G09F9/30 ,  G09G3/36 ,  H01L27/12 ,  G02F1/13357 ,  G02F1/136

    CPC classification number: G02F1/1343 ,  G02F1/136286 ,  G09F9/30 ,  G09G3/3648 ,  H01L27/1225 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  G02F1/133602 ,  G02F1/13606 ,  G09G2300/0439

    Abstract: A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided.
    The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.

    Semiconductor device
    152.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12080717B2

    公开(公告)日：2024-09-03

    申请号：US16910196

    申请日：2020-06-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

    Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

    Display Device and Electronic Device
    159.
    发明申请
    Display Device and Electronic Device 有权

    公开(公告)号：US20220173131A1

    公开(公告)日：2022-06-02

    申请号：US17673212

    申请日：2022-02-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kei Takahashi ,  Hiroyuki Miyake

    IPC: H01L27/12 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3225

    Abstract: A display device including a display portion with an extremely high resolution is provided. The display device includes a pixel circuit and a light-emitting element. The pixel circuit includes a first element layer including a first transistor and a second element layer including a second transistor. A channel formation region of the first transistor includes silicon. The first transistor has a function of driving the light-emitting element. The second transistor functions as a switch. A channel formation region of the second transistor includes a metal oxide. The metal oxide functions as a semiconductor. The second element layer is provided over the first element layer.

    Display device
    160.
    发明授权
    Display device 有权

    公开(公告)号：US11187944B2

    公开(公告)日：2021-11-30

    申请号：US17061876

    申请日：2020-10-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroyuki Miyake ,  Makoto Kaneyasu

    IPC: H01L29/10 ,  H01L29/12 ,  G02F1/1343 ,  G02F1/1362 ,  G09F9/30 ,  G09G3/36 ,  H01L27/12 ,  H01L29/786 ,  G02F1/136 ,  G02F1/13357

    Abstract: A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided.
    The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.

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