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    Shock resistant cascaded microchannel plate assemblies and methods of use
    161.
    发明授权
    Shock resistant cascaded microchannel plate assemblies and methods of use 失效
    防震级联微通道板组件及使用方法

    公开(公告)号：US5510673A

    公开(公告)日：1996-04-23

    申请号：US282813

    申请日：1994-07-29

    Applicant: Norman D. Wodecki ,  Charles B. Johnson ,  Kevin D. Wheeler

    Inventor： Norman D. Wodecki ,  Charles B. Johnson ,  Kevin D. Wheeler

    IPC: H01J31/50 ,  H01J43/24 ,  H01J43/28

    CPC classification number: H01J43/246 ,  H01J31/507 ,  H01J43/28

    Abstract: Shock resistant microchannel plate assemblies incorporating stacked or cascaded microchannel plates, and to methods of their use are disclosed. High-output amplification tubes of the photomultiplier type, or of the image intensifier type, having a plurality of sequentially arranged, or cascaded, electron multiplier microchannel plates are also disclosed. More particularly the present invention relates to a high output photomultiplier tube or image tube having cascaded microchannel plates radially constrained by an annular insulating ring. In another aspect of the present invention image intensifier tubes or photomultiplier tubes may include a tapered ceramic high voltage stand-off. Moreover, a method of making such tubes is also disclosed.

    Abstract translation: 公开了包含堆叠或级联的微通道板的抗冲击微通道板组件及其使用方法。 还公开了具有多个顺序排列或级联的电子倍增器微通道板的光电倍增器类型或图像增强器类型的高输出放大管。 更具体地说，本发明涉及具有由环形绝缘环径向约束的级联微通道板的高输出光电倍增管或图像管。 在本发明的另一方面，图像增强管或光电倍增管可以包括锥形陶瓷高压支架。 此外，还公开了制造这种管的方法。

    Photomultiplier
    162.
    发明授权
    Photomultiplier 失效
    光电倍增管

    公开(公告)号：US5438191A

    公开(公告)日：1995-08-01

    申请号：US102808

    申请日：1993-08-06

    Applicant: Suenori Kimura ,  Nobuyuki Ohsugi ,  Toshiharu Totsuka

    Inventor： Suenori Kimura ,  Nobuyuki Ohsugi ,  Toshiharu Totsuka

    IPC: H01J40/06 ,  H01J43/04 ,  H01J43/18 ,  H01J43/28 ,  H01J40/14

    CPC classification number: H01J43/04 ,  H01J43/28

    Abstract: The present invention pertains to a photomultiplier of head-on type that has a transparent tubular glass bulb and a principal photocathode formed on the internal surface of a closed end of the glass bulb, that is, on the internal surface of a light entrance window. In addition, this photomultiplier has a side photocathode formed on the entire internal surface of side wall of the glass bulb in the region adjacent to the principal photocathode. A reflection film is formed on the outer surface of side wall of the glass bulb and opposes to the side photocathode. Some light entering the peripheral portion of the light entrance window of the glass bulb and traveling toward the outer surface of side wall is reflected inwardly by the reflection film and reaches the side photocathode, where the light is to be converted into photoelectrons. The photoelectrons are guided to the electron multiplying unit in glass bulb, where the photoelectrons are multiplied and detected by an anode.

    Abstract translation: 本发明涉及一种具有透明管状玻璃灯泡和形成在玻璃灯泡的封闭端的内表面上的主要光电阴极的正面型光电倍增管，即在光入射窗的内表面上。 此外，该光电倍增管具有在与主光电阴极相邻的区域中的玻璃泡的侧壁的整个内表面上形成的侧光电阴极。 在玻璃灯泡的侧壁的外表面上形成反射膜并与侧面光电阴极相对。 进入玻璃泡的光入射窗的周边部分并朝向侧壁的外表面行进的一些光被反射膜向内反射并到达侧光电阴极，在那里将光转换成光电子。 光电子被引导到玻璃灯泡中的电子倍增单元，其中光电子被乘以并由阳极检测。

    Photomultiplier with secondary electron shielding means
    164.
    发明授权
    Photomultiplier with secondary electron shielding means 失效
    具有二次电子屏蔽装置的光电倍增管

    公开(公告)号：US4825066A

    公开(公告)日：1989-04-25

    申请号：US155842

    申请日：1988-02-12

    Applicant: Kimitsugu Nakamura ,  Masuo Ito

    Inventor： Kimitsugu Nakamura ,  Masuo Ito

    IPC: H01J43/06 ,  H01J43/28 ,  H01J40/14

    CPC classification number: H01J43/06 ,  H01J43/28

    Abstract: A photomultiplier for converting an incident weak light into multiplied electrons to thereby output an electrical signal corresponding to the intensity of the incidence light. The photomultiplier comprises a photocathode for emitting primary electrons; plural dynodes for emitting secondary electrons in response to incident of the primary electrons and multiplying first secondary electrons passing between the dynodes; and shield means for preventing second secondary electrons emitted from a first dynode of the dynodes toward the photocathode from returning to the dynodes, thereby to reduce the generation of a residual pulse currents caused by the second secondary electrons and to accurately detect a main pulse current caused by the first secondary electrons.

    Abstract translation: 一种用于将入射的弱光转换成倍数电子从而输出对应于入射光强度的电信号的光电倍增管。 光电倍增管包括用于发射一次电子的光电阴极; 多个倍增电极，用于响应于初级电子的入射发射二次电子并且乘以在倍增电极之间通过的第一二次电子; 以及屏蔽装置，用于防止从倍增电极的第一倍增电极发射到光电阴极的第二二次电子返回到倍增极，从而减少由第二二次电子引起的残留脉冲电流的产生，并且精确地检测引起的主脉冲电流 由第一个二次电子。

    Electron discharge device having a ceramic member with means for reducing luminescence therein
    165.
    发明授权
    Electron discharge device having a ceramic member with means for reducing luminescence therein 失效
    具有陶瓷构件的电子放电装置，其具有用于减少发光的装置

    公开(公告)号：US4554481A

    公开(公告)日：1985-11-19

    申请号：US546536

    申请日：1983-10-28

    Applicant: Richard D. Faulkner ,  James L. Rhoads

    Inventor： Richard D. Faulkner ,  James L. Rhoads

    IPC: C04B41/50 ,  C04B41/87 ,  H01J9/24 ,  H01J43/28 ,  H01J31/48

    CPC classification number: C04B41/009 ,  C04B41/5033 ,  C04B41/87 ,  H01J43/28 ,  H01J9/24

    Abstract: An improved electron discharge device comprises an evacuated envelope having at least one alumina ceramic insulator member. Within the device is a source of electrons, and an electron multiplier assembly including an anode. A high resistance material is diffused into the ceramic insulator to reduce luminescence within the insulator. The method of diffusion includes the steps of applying an opaque coating of a high resistance material to a surface of the ceramic insulator member and then firing the member in a reducing atmosphere at a temperature within the range of about 1500.degree. C. to 1550.degree. C. until the high resistance material diffuses into the surface of the member forming a diffusion region.

    Abstract translation: 改进的电子放电装置包括具有至少一个氧化铝陶瓷绝缘体构件的真空外壳。 在器件内部是电子源，以及包括阳极的电子倍增器组件。 高电阻材料扩散到陶瓷绝缘体中以减少绝缘体内的发光。 扩散方法包括以下步骤：将高电阻材料的不透明涂层施加到陶瓷绝缘体构件的表面上，然后在约1500℃至1550℃的温度范围内的还原气氛中焙烧该构件 直到高电阻材料扩散到形成扩散区域的部件的表面中。

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