公开(公告)号：US20220271144A1

公开(公告)日：2022-08-25

申请号：US17591012

申请日：2022-02-02

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  Kochi Prefectural Public University Corporation

Inventor： Takashi OKAWA ,  Hidemoto TOMITA ,  Toshiyuki KAWAHARAMURA ,  Li Liu

IPC: H01L29/51 ,  H01L21/28 ,  H01L21/02

Abstract: A method for manufacturing a nitride semiconductor device includes formation of a gate insulation film above a nitride semiconductor layer. The formation of the gate insulation film includes formation of silicon oxynitride film in contact with a surface of the nitride semiconductor layer. The formation of the silicon oxynitride film includes oxidation of a film source material having both of silicon and nitride in a molecule to form the silicon oxynitride film.

公开(公告)号：US20220200553A1

公开(公告)日：2022-06-23

申请号：US17551369

申请日：2021-12-15

Applicant: DENSO CORPORATION ,  MIRISE Technologies Corporation

Inventor： Isao SAKAKIDA

IPC: H03F3/45 ,  H03F1/22 ,  H03F3/195 ,  H01L23/66

Abstract: A semiconductor integrated circuit includes an input terminal, an output terminal, and a multi-stage connection unit including multiple MOS transistors connected in multiple stages between the input terminal and the output terminal. The MOS transistors include an input stage transistor connected to the input terminal and an output stage transistor connected to the output terminal. A thickness of a gate dielectric of the output stage transistor is equal to a thickness of a gate dielectric of the input stage transistor, and a gate length of the output stage transistor is longer than a gate length of the input stage transistor.

公开(公告)号：US20250149989A1

公开(公告)日：2025-05-08

申请号：US18829412

申请日：2024-09-10

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Takashi YAMADA

IPC: H02M3/335 ,  H02M7/5387

Abstract: In a flyback power supply circuit, electric power for driving semiconductor switching elements constituting a three-phase inverter circuit is generated by a plurality of transformers having primary windings and secondary windings. The primary windings of the multiple transformers are connected in series. The control unit controls a semiconductor switch that turns on and off the current flowing from the input power supply to the primary winding. A rectifier circuit is connected to each secondary winding.

公开(公告)号：US12294831B2

公开(公告)日：2025-05-06

申请号：US18181912

申请日：2023-03-10

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  Nisshinbo Micro Devices Inc.

Inventor： Tomoya Joke ,  Tetsuya Enomoto ,  Hideo Yamada ,  Shuji Katakami ,  Takashi Kakefuda ,  Takahide Usui

IPC: H04R17/00

Abstract: An electroacoustic transducer includes a vibrating portion, a slit and an elastic film. The vibrating portion has a fixed end portion and a free end portion, and extends as a cantilever from the fixed end portion toward the free end portion along an extending direction orthogonal to a directivity axis to vibrate in a manner that the free end portion moves along the directivity axis. The slit is formed at two ends of the vibrating portion in a width direction orthogonal to the directivity axis and orthogonal to the extending direction. The elastic film is provided to close the slit in an axial direction that is aligned with the directivity axis. The slit includes a wide portion provided on a free end side and a narrow portion narrower than the wide portion. The elastic film is provided to close the wide portion while not closing the narrow portion.

公开(公告)号：US12288817B2

公开(公告)日：2025-04-29

申请号：US17871231

申请日：2022-07-22

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Masato Noborio

IPC: H01L29/78 ,  H01L21/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66

Abstract: A semiconductor device has a cell region formed with a semiconductor element and an outer peripheral region surrounding the cell region. The outer peripheral region includes a guard ring part having a plurality of guard rings of the second conductivity-type, and a plurality of guard ring column regions of the second conductivity-type. Each of the guard rings is disposed in a surface layer portion of the drift layer and has a frame shape surrounding the cell region. The guard ring column regions are extended from the guard rings toward the substrate. Each of the guard ring column regions has a width smaller than a width of each of the guard rings in a direction along a planar direction of the substrate in a predetermined cross-section defined along the cell region and the outer peripheral region. At least two guard ring column regions are provided for each guard ring.

公开(公告)号：US12288720B2

公开(公告)日：2025-04-29

申请号：US17680464

申请日：2022-02-25

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  HAMAMATSU PHOTONICS K.K.

Inventor： Masatake Nagaya ,  Daisuke Kawaguchi

IPC: H01L21/78 ,  H01L21/26 ,  H01L21/784 ,  H01L23/544 ,  H01L29/66 ,  H01L33/00 ,  H10D30/01 ,  H10D89/00 ,  H10H20/01

Abstract: A manufacturing method for a semiconductor chip includes: preparing a GaN wafer; producing a processed wafer by forming an epitaxial film on a surface of the GaN wafer to have chip formation regions adjacent to a first surface of the processed wafer; forming a first surface-side element component of a semiconductor element in each chip formation region; forming a wafer transformation layer along a planar direction of the processed wafer by irradiating an inside of the processed wafer with a laser beam; dividing the processed wafer at the wafer transformation layer into a chip formation wafer and a recycle wafer; extracting a semiconductor chip from the chip formation wafer; and after the preparing the GaN wafer and before the dividing the processed wafer, irradiating an inside of the gallium nitride wafer or the processed wafer with a laser beam to form a mark by deposition of gallium.

公开(公告)号：US12278274B2

公开(公告)日：2025-04-15

申请号：US18052424

申请日：2022-11-03

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Hidemoto Tomita

IPC: H01L29/66 ,  H01L21/04

Abstract: A method of manufacturing a silicon carbide semiconductor device includes forming a constituent layer and forming a super junction structure. The formation of the super junction structure includes forming a film-forming mask on the constituent layer, forming an opening portion at the film-forming mask, forming a mask-forming trench at the constituent layer and adopting a portion of the constituent layer surrounding the mask-forming trench as a silicon carbide mask through etching by adopting the film-forming mask, forming a second-conductivity-type column region by ion implantation of impurities at a bottom surface of the mask-forming trench by adopting an ion-implantation mask having the film-forming mask and the silicon carbide mask, and removing a portion of the constituent layer where the silicon carbide mask is formed.

公开(公告)号：US12271095B2

公开(公告)日：2025-04-08

申请号：US17687054

申请日：2022-03-04

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Hikaru Sasaki ,  Koichi Oyama ,  Taro Beppu

IPC: G02F1/29 ,  G01B7/16 ,  G01S7/481

Abstract: An optical scanner includes a substrate, an optical phased array, a shape sensor, a deviation calculation unit, and a control unit. The optical phased array includes an antenna array having a plurality of antenna elements. The deviation calculation unit calculates an amount of positional deviation of each antenna element based on an amount of deformation of the substrate detected by the shape sensor, and calculates an amount of phase deviation of light emitted from each antenna element. The control unit corrects the phase of light emitted from each antenna element based on the amount of phase deviation calculated by the deviation calculation unit, and controls the phase of the antenna element so that the antenna array emits the light in a target direction.

公开(公告)号：US20250111678A1

公开(公告)日：2025-04-03

申请号：US18889992

申请日：2024-09-19

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： NOBUAKI MATSUDAIRA ,  TOMOHIRO NEZUKA

IPC: G06V20/56 ,  G06T7/70 ,  G06V10/44

Abstract: An estimation device is configured to: calculate a position and an orientation of a vehicle, using a self-position estimation method including Visual Odometry, based on sequential two-dimensional images of outside of the vehicle captured by a same camera, which is at least one of a plurality of cameras provided on the vehicle; obtain a bird's-eye view (BEV) feature, which is a feature in a BEV space, based on the two-dimensional images of the outside of the vehicle using a BEV estimation algorithm; and correct the obtained BEV feature using information representing the position and the orientation.

公开(公告)号：US20250107187A1

公开(公告)日：2025-03-27

申请号：US18475577

申请日：2023-09-27

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Jun SAITO

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78

Abstract: A switching element includes a gate electrode and a source electrode disposed in each of trenches provided in a semiconductor substrate. A longitudinal direction of the trench is defined as a first direction, and the trenches are spaced from each other in a second direction intersecting the first direction. Each of the trenches extends in the first direction while being displaced in the second direction so as to satisfy that an inter-trench region between the adjacent trenches has narrow portions and wide portions alternately arranged in the first direction and alternately arranged in the second direction via the trenches. A source region is distributed across the narrow portion and the wide portion, and is in contact with the source electrode in the wide portion.