公开(公告)号：US20190323663A1

公开(公告)日：2019-10-24

申请号：US16449126

申请日：2019-06-21

Applicant: Soraa Laser Diode, Inc.

Inventor： Paul Rudy ,  James W. Raring ,  Eric Goutain ,  Troy Trottier ,  Melvin McLaurin ,  James Harrison ,  Sten Heikman ,  Michael Cantore

IPC: F21K9/64 ,  H01S5/024 ,  H01S5/40 ,  H01S5/00 ,  F21K9/69 ,  F21K9/68 ,  H01S5/022 ,  F21K9/90 ,  F21V29/70 ,  H01S5/343

Abstract: The embodiments described herein provide a high-luminous flux laser-based white light source. A plurality of laser packages are arranged in an array pattern on a common support member. The plurality of laser packages each include one or more laser diode devices and a phosphor member. The phosphor member converts a fraction of the electromagnetic radiation from each of the laser diode devices to an emitted electromagnetic radiation and a white light is outputted.

公开(公告)号：US10431958B1

公开(公告)日：2019-10-01

申请号：US16032997

申请日：2018-07-11

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01L33/16 ,  H01S5/022 ,  H01S5/028 ,  H01S5/32 ,  H01L29/20 ,  H01S5/042 ,  H01S5/343 ,  H01S5/02 ,  H01L23/00 ,  H01L33/50

Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between the reference crystal orientation and the selected direction of the first handle substrate. A processed region is formed overlying each of the substrates.

公开(公告)号：US20190179016A1

公开(公告)日：2019-06-13

申请号：US16011443

申请日：2018-06-18

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Vlad Novotny

IPC: G01S17/10 ,  G01S7/487 ,  F21V29/70 ,  H01S5/024 ,  F21K9/64 ,  G01S7/481 ,  G01S17/89 ,  H01S5/00

CPC classification number: G01S17/10 ,  F21K9/64 ,  F21V29/70 ,  G01S7/4817 ,  G01S7/487 ,  G01S17/023 ,  G01S17/89 ,  G01S17/936 ,  H01S5/0085 ,  H01S5/02469

Abstract: The present disclosure provides a mobile machine including a laser diode based lighting system having an integrated package holding at least a gallium and nitrogen containing laser diode and a wavelength conversion member. The gallium and nitrogen containing laser diode is configured to emit a first laser beam with a first peak wavelength. The wavelength conversion member is configured to receive at least partially the first laser beam with the first peak wavelength to excite an emission with a second peak wavelength that is longer than the first peak wavelength and to generate the white light mixed with the second peak wavelength and the first peak wavelength. The mobile machine further includes a light detection and ranging (LIDAR) system configured to generate a second laser beam and manipulate the second laser beam to sense a spatial map of target objects in a remote distance.

公开(公告)号：US10297977B1

公开(公告)日：2019-05-21

申请号：US16000802

申请日：2018-06-05

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy

IPC: H05B33/00 ,  H01L33/60 ,  H01L33/30 ,  F41A33/02 ,  F41C23/16 ,  C09K11/06 ,  H01S5/042 ,  F41H13/00 ,  H01S5/022 ,  H01S5/343 ,  H01S5/40 ,  H01S5/323 ,  H01S3/16 ,  H01S5/026 ,  H01S5/22 ,  H01S5/32

Abstract: A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.

公开(公告)号：US10274139B1

公开(公告)日：2019-04-30

申请号：US15870586

申请日：2018-01-12

Applicant: Soraa Laser Diode, Inc.

Inventor： Eric Goutain

IPC: F21K9/64 ,  G02B27/30 ,  H01S5/40 ,  H01S5/343 ,  H01S5/00

Abstract: A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.

公开(公告)号：US20190109432A1

公开(公告)日：2019-04-11

申请号：US16199974

申请日：2018-11-26

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/022

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US10205300B1

公开(公告)日：2019-02-12

申请号：US14984108

申请日：2015-12-30

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Vinod Khosla ,  Pierre Lamond ,  Steven P. Denbaars ,  Shuji Nakamura ,  Richard T. Ogawa

IPC: H01J7/24 ,  H05B31/26 ,  H01S5/042 ,  H01S5/343 ,  H01S5/22 ,  H01S5/00 ,  H01S5/10 ,  F41B15/00 ,  F41H9/10

Abstract: Laser dazzler devices and methods of using laser dazzler devices are disclosed. More specifically, embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices according to the present invention include non-polar and/or semi-polar green laser diodes. In a specific embodiment, a laser dazzling device includes a plurality of green laser diodes.

公开(公告)号：US10186841B1

公开(公告)日：2019-01-22

申请号：US15887217

申请日：2018-02-02

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/02 ,  H01S5/343 ,  H01S5/30 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

公开(公告)号：US10108079B2

公开(公告)日：2018-10-23

申请号：US15796568

申请日：2017-10-27

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy

IPC: G03B21/20 ,  F21S41/14 ,  H01S5/34 ,  H04N9/31 ,  H04N13/334 ,  H04N13/337 ,  H04N13/363 ,  F21K9/64 ,  F21S8/10 ,  H01S5/343 ,  H04N13/04

Abstract: The present invention is directed to a laser light source for a vehicle.

公开(公告)号：US10096973B1

公开(公告)日：2018-10-09

申请号：US15453839

申请日：2017-03-08

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Matthew Schmidt ,  Bryan Ellis

IPC: H01S5/00 ,  H01S5/22 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S5/32 ,  H01S5/10

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.