公开(公告)号：US08975141B2

公开(公告)日：2015-03-10

申请号：US13563202

申请日：2012-07-31

Applicant: Andy C. Wei ,  Bin Yang ,  Francis M. Tambwe

Inventor： Andy C. Wei ,  Bin Yang ,  Francis M. Tambwe

IPC: H01L21/336

CPC classification number: H01L27/11 ,  H01L21/823821 ,  H01L29/7843

Abstract: A method for fabricating a dual-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure, depositing a low-resistance material layer over the first workfunction material layer, and etching the low-resistance material layer and the first workfunction material layer from a portion of the FinFET structure. The method further includes depositing a second workfunction material in a layer in a plurality of trenches of the portion and depositing a stress material layer over the second workfunction material layer.

Abstract translation: 一种用于制造双功函数FinFET结构的方法，包括在FinFET结构的多个沟槽中的层中沉积第一功函数材料，在第一功函数材料层上沉积低电阻材料层，以及蚀刻低电阻材料 层和来自FinFET结构的一部分的第一功函数材料层。 该方法还包括在该部分的多个沟槽中的层中沉积第二功函数材料，并在第二功函数材料层上沉积应力材料层。

公开(公告)号：US08956948B2

公开(公告)日：2015-02-17

申请号：US12783914

申请日：2010-05-20

Applicant: Yanxiang Liu ,  Bin Yang

Inventor： Yanxiang Liu ,  Bin Yang

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L21/76229 ,  H01L21/76237

Abstract: A semiconductor device is formed with extended STI regions. Embodiments include implanting oxygen under STI trenches prior to filling the trenches with oxide and subsequently annealing. An embodiment includes forming a recess in a silicon substrate, implanting oxygen into the silicon substrate below the recess, filling the recess with an oxide, and annealing the oxygen implanted silicon. The annealed oxygen implanted silicon extends the STI region, thereby reducing leakage current between N+ diffusions and N-well and between P+ diffusions and P-well, without causing STI fill holes and other defects.

Abstract translation: 半导体器件形成有延伸的STI区域。 实施例包括在用氧化物填充沟槽并随后退火之前在STI沟槽下注入氧气。 一个实施例包括在硅衬底中形成凹槽，将氧注入到凹陷下方的硅衬底中，用氧化物填充凹槽，并对氧注入的硅进行退火。 退火的氧注入硅延伸STI区域，从而减少N +扩散与N阱之间以及P +扩散与P阱之间的漏电流，而不会引起STI填充孔和其他缺陷。

公开(公告)号：US08936978B2

公开(公告)日：2015-01-20

申请号：US12955388

申请日：2010-11-29

Applicant: Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

Inventor： Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

IPC: H01L29/06 ,  H01L29/417

CPC classification number: H01L29/0673 ,  H01L21/823814 ,  H01L29/41791

Abstract: A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure.

公开(公告)号：US08861034B2

公开(公告)日：2014-10-14

申请号：US14128351

申请日：2012-05-18

Applicant: Haifeng Li ,  Bin Yang

Inventor： Haifeng Li ,  Bin Yang

IPC: G06K15/00 ,  H04N1/405 ,  H04N1/40 ,  G06K15/02

CPC classification number: G06K15/1881 ,  H04N1/40087 ,  H04N1/4055

Abstract: The present application discloses a method and an apparatus for generating multi-bit depth halftone amplitude-modulation dots. The method may comprise: scanning an input image to obtain a value of a current pixel Pxy, where x represents a lateral position index of the current pixel, and y represents a vertical position index of the current pixel; obtaining gj from a preset multi-bit depth threshold matrix G by starting with i=0, and determining if Pxy

Abstract translation: 本申请公开了一种用于产生多位深度半色调幅度调制点的方法和装置。 该方法可以包括：扫描输入图像以获得当前像素Pxy的值，其中x表示当前像素的横向位置索引，y表示当前像素的垂直位置索引; 通过以i = 0开始从预设的多位深度阈值矩阵G获得gj，并且确定Pxy

公开(公告)号：US20130335785A1

公开(公告)日：2013-12-19

申请号：US13976335

申请日：2011-12-27

Applicant: Wenfa Qi ,  Shuchang Han ,  Gaoyang Wang ,  Lidong Wang ,  Bin Yang

Inventor： Wenfa Qi ,  Shuchang Han ,  Gaoyang Wang ,  Lidong Wang ,  Bin Yang

IPC: G06F3/12 ,  G06K15/00

CPC classification number: G06F3/1238 ,  G06F3/1222 ,  G06F3/1288 ,  G06F3/1289 ,  G06K15/4095 ,  H04L63/102 ,  H04L63/20 ,  H04L67/125 ,  H04L67/34

Abstract: Disclosed is a method and system for document printing management and control and source tracking. A printing management service program runs at a server end. A printing monitoring service program runs at a client end. The printing management service program saves client end information, monitors and manages a client end computer, sets a printing management policy, and delivers operation instructions to the client end. The printing monitoring service program collects the client end information, sends the client end information to the server end, and executes the operation instruction.

Abstract translation: 公开了一种用于文件打印管理和控制和源跟踪的方法和系统。 打印管理服务程序在服务器端运行。 打印监控服务程序在客户端运行。 打印管理服务程序保存客户端信息，监控和管理客户端计算机，设置打印管理策略，并向客户端传送操作指令。 打印监控服务程序收集客户端信息，将客户端信息发送到服务器端，并执行操作指令。

公开(公告)号：US20130241008A1

公开(公告)日：2013-09-19

申请号：US13611736

申请日：2012-09-12

Applicant: Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

Inventor： Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

IPC: H01L29/78

CPC classification number: H01L29/7833 ,  H01L21/28512 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545

Abstract: A device includes a gate stack formed over a channel in a semiconductor substrate. The gate stack includes a layer of gate insulator material, a layer of gate metal overlying the layer of gate insulator material, and a layer of contact metal overlying the layer band edge gate metal. The device further includes source and drain contacts adjacent to the channel. The source and drain contacts each include a layer of the gate metal that overlies and is in direct electrical contact with a doped region of the semiconductor substrate, and a layer of contact metal that overlies the layer of gate metal.

Abstract translation: 一种器件包括形成在半导体衬底中的沟道上方的栅叠层。 栅极堆叠包括栅极绝缘体材料层，覆盖栅极绝缘体材料层的栅极金属层和覆盖层带边缘栅极金属的接触金属层。 该装置还包括邻近通道的源极和漏极接触。 源极和漏极触点各自包括覆盖并与半导体衬底的掺杂区域直接电接触的栅极金属层以及覆盖在栅极金属层上的接触金属层。

公开(公告)号：US20130241007A1

公开(公告)日：2013-09-19

申请号：US13421276

申请日：2012-03-15

Applicant: Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

Inventor： Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

IPC: H01L29/78 ,  H01L21/283

CPC classification number: H01L29/7833 ,  H01L21/28512 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545

Abstract: A method includes providing a semiconductor substrate having intentionally doped surface regions, the intentionally doped surface regions corresponding to locations of a source and a drain of a transistor; depositing a layer a band edge gate metal onto a gate insulator layer in a gate region of the transistor while simultaneously depositing the band edge gate metal onto the surface of the semiconductor substrate to be in contact with the intentionally doped surface regions; and depositing a layer of contact metal over the band edge gate metal in the gate region and in the locations of the source and the drain. The band edge gate metal in the source/drain regions reduces a Schottky barrier height of source/drain contacts of the transistor and serves to reduce contact resistance. A transistor fabricated in accordance with the method is also described.

Abstract translation: 一种方法包括提供具有有意掺杂的表面区域的半导体衬底，有意掺杂的表面区域对应于晶体管的源极和漏极的位置; 在晶体管的栅极区域中的栅绝缘体层上沉积带边缘栅极金属层，同时将带边缘栅极金属沉积到半导体衬底的表面上以与有意掺杂的表面区域接触; 以及在所述栅极区域中以及所述源极和漏极的位置中的所述带边缘栅极金属之上沉积接触金属层。 源极/漏极区域中的带边缘栅极金属降低了晶体管的源极/漏极接触的肖特基势垒高度，并且用于降低接触电阻。 还描述了根据该方法制造的晶体管。

公开(公告)号：US20130186607A1

公开(公告)日：2013-07-25

申请号：US13747440

申请日：2013-01-22

Applicant: James A. Mathias ,  G. Bradley Chadwell ,  Dongming Qiu ,  Annalee Y. Tonkovich ,  Steven T. Perry ,  Matthew B. Schmidt ,  Sean P. Fitzgerald ,  David J. Hesse ,  Thomas D. Yuschak ,  Bin Yang

Inventor： James A. Mathias ,  G. Bradley Chadwell ,  Dongming Qiu ,  Annalee Y. Tonkovich ,  Steven T. Perry ,  Matthew B. Schmidt ,  Sean P. Fitzgerald ,  David J. Hesse ,  Thomas D. Yuschak ,  Bin Yang

IPC: F28F3/12

CPC classification number: F16L41/02 ,  B01J19/0093 ,  B01J35/04 ,  B01J2219/00869 ,  B01J2219/00891 ,  C01B3/384 ,  C01B2203/0233 ,  C01B2203/0811 ,  C01B2203/0822 ,  F28D7/0066 ,  F28D9/0093 ,  F28F3/12 ,  F28F7/02 ,  F28F2260/02 ,  Y02P20/128 ,  Y02P20/52 ,  Y10T137/0318 ,  Y10T137/6579 ,  Y10T137/87153 ,  Y10T137/87249

Abstract: Provided is a process and device for exchanging heat energy between three or more streams in a microchannel heat exchanger which can be integrated with a microchannel reactor to form an integrated microchannel processing unit. The combining of a plurality of integrated microchannel devices to provide the benefits of large-scale operation is enabled. In particular, the microchannel heat exchanger enables flexible heat transfer between multiple streams and total heat transfer rates of about 1 Watt or more per core unit volume expressed as W/cc.

Abstract translation: 提供了一种用于在微通道热交换器中的三个或更多个流之间交换热能的过程和装置，其可以与微通道反应器集成以形成集成的微通道处理单元。 实现了多个集成微通道装置的组合以提供大规模操作的优点。 特别地，微通道热交换器使得能够在多个流之间实现柔性热传递，并且以W / cc表示的每单位体积的约1瓦或更高的总传热速率。

公开(公告)号：US20130165536A1

公开(公告)日：2013-06-27

申请号：US13596033

申请日：2012-08-27

Applicant: Anna Lee Tonkovich ,  David J. Hesse ,  Sean P. Fitzgerald ,  Bin Yang ,  Ravi Arora ,  Laura J. Silva ,  G. Bradley Chadwell ,  Kai Jarosch ,  Dongming Qiu

Inventor： Anna Lee Tonkovich ,  David J. Hesse ,  Sean P. Fitzgerald ,  Bin Yang ,  Ravi Arora ,  Laura J. Silva ,  G. Bradley Chadwell ,  Kai Jarosch ,  Dongming Qiu

IPC: F28F1/00

CPC classification number: F28F1/00 ,  B01B1/005 ,  B01J19/0013 ,  B01J19/0093 ,  B01J2219/00054 ,  B01J2219/00074 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00835 ,  B01J2219/0086 ,  B01J2219/00869 ,  B01J2219/00873 ,  B01J2219/00891 ,  B01J2219/00995 ,  B01J2219/182 ,  B01J2219/2411 ,  B01J2219/2462 ,  C07B61/00 ,  F28D9/00 ,  F28D15/04 ,  F28D2015/0225 ,  F28D2021/0022 ,  F28D2021/0064 ,  F28F13/00 ,  F28F13/187 ,  F28F2260/02

Abstract: The invention provides methods, apparatus and systems in which there is partial boiling of a liquid in a mini-channel or microchannel. The partial boiling removes heat from an exothermic process.

Abstract translation: 本发明提供了在微通道或微通道中存在液体部分沸腾的方法，装置和系统。 部分沸腾从放热过程中除去热量。

公开(公告)号：US08462390B2

公开(公告)日：2013-06-11

申请号：US13124708

申请日：2009-10-19

Applicant: Haifeng Li ,  Shixiong Ma ,  Bin Yang ,  Lidong Wang

Inventor： Haifeng Li ,  Shixiong Ma ,  Bin Yang ,  Lidong Wang

IPC: H04N1/52

CPC classification number: H04N1/52

Abstract: An image processing method includes: generating a stochastic screening dither matrix (S101); performing a centered positive-negative conversion operation on the stochastic screening dither matrix (S102); generating a screen dot dither contrast matrix for each color surface according to the stochastic screening dither matrix after being subjected to the positive-negative conversion operation and a stochastic screening dither threshold set for each color surface of an image; performing a logical “and” operation between each data item in a one-bit amplitude modulation screen dot matrix of each color surface of the image and a data item at a corresponding position in the screen dot dither contrast matrix of the color surface, and using a result as a processed value of a corresponding data item in the one-bit amplitude modulation screen dot matrix of the color surface. An apparatus corresponding to the image processing method is also provided. According to the above-described image processing method and apparatus, the problem in the prior art of an excess of pure-color pixels existing in an original one-bit dot matrix can be resolved.

Abstract translation: 一种图像处理方法包括：产生随机筛选抖动矩阵（S101）; 对随机筛选抖动矩阵执行中心正负转换操作（S102）; 根据随机筛选抖动矩阵在进行正负转换操作之后产生每个颜色表面的屏幕点抖动对比度矩阵，以及为图像的每个颜色表面设置的随机屏蔽抖动阈值; 在图像的每个颜色表面的一位幅度调制屏幕点阵中的每个数据项之间执行逻辑“和”操作，以及在颜色表面的屏幕点抖动对比矩阵中的相应位置处的数据项，并且使用 作为颜色表面的一位幅度调制屏幕点阵中的相应数据项的处理值的结果。 还提供了与图像处理方法对应的装置。 根据上述图像处理方法和装置，可以解决现有技术中存在于原始一位点阵中的纯色像素的过剩问题。