Display panel and display apparatus having the same
    182.
    发明授权
    Display panel and display apparatus having the same 有权
    显示面板和具有该显示面板的显示装置

    公开(公告)号:US09082362B2

    公开(公告)日:2015-07-14

    申请号:US13242379

    申请日:2011-09-23

    Abstract: A display panel includes a display area, a peripheral area which includes a first peripheral area, and a second peripheral area opposite to the first peripheral area, a plurality of pixels in the display area, a plurality of data lines, a first gate line, a second gate line, a first gate driving circuit and a second gate driving circuit. Each data line corresponds to two pixel columns. The first gate line is at a first side of a pixel row. The second gate line is at a second side of the pixel row. The first gate driving circuit is in the first peripheral area and includes a first stage which provides a gate signal to the first gate line. The second gate driving circuit is in a second peripheral area of the display area and includes a second stage which provides a gate signal to the second gate line.

    Abstract translation: 显示面板包括显示区域,包括第一外围区域的外围区域和与第一外围区域相反的第二外围区域,显示区域中的多个像素,多个数据线,第一栅极线, 第二栅极线,第一栅极驱动电路和第二栅极驱动电路。 每个数据线对应于两个像素列。 第一个栅极线位于像素行的第一侧。 第二栅极线位于像素行的第二侧。 第一栅极驱动电路在第一周边区域中,并且包括向第一栅极线提供栅极信号的第一级。 第二栅极驱动电路在显示区域的第二周边区域中,并且包括向第二栅极线提供栅极信号的第二级。

    Image recording system for vehicle and reflection unit
    183.
    发明授权
    Image recording system for vehicle and reflection unit 有权
    车辆和反射单元图像记录系统

    公开(公告)号:US09007455B2

    公开(公告)日:2015-04-14

    申请号:US13437515

    申请日:2012-04-02

    Applicant: Jae Hoon Lee

    Inventor: Jae Hoon Lee

    CPC classification number: G07C5/0866 B60R1/08

    Abstract: There are provided an image recording system for a vehicle and a reflection unit thereof. The image recording system includes a vehicle in which a storage space is provided, a camera that is installed in the storage space, and a reflection unit that is installed on a window or a ceiling of the vehicle to reflect image information from a forward or rearward direction of the vehicle into the camera.

    Abstract translation: 提供了一种用于车辆的图像记录系统及其反射单元。 图像记录系统包括其中设置有存储空间的车辆,安装在存储空间中的照相机,以及安装在车辆的窗户或天花板上以从前方或后方反射图像信息的反射单元 车辆的方向进入相机。

    Gate drive circuit and method of driving the same
    185.
    发明授权
    Gate drive circuit and method of driving the same 有权
    栅极驱动电路及其驱动方法

    公开(公告)号:US08754674B2

    公开(公告)日:2014-06-17

    申请号:US12764433

    申请日:2010-04-21

    CPC classification number: G09G3/3677 G09G2310/0286 G11C19/184 G11C19/28

    Abstract: In a gate drive circuit including stages which are cascaded and which output gate signals each of the stages includes a first node, an output part, a first holding part and a second holding part. A voltage of the first node is converted to a high voltage in response to one of a vertical start signal and a carry signal of one of previous stages. The output part outputs a first clock signal as a gate signal through an output terminal in response to the high voltage of the first node. The first holding part applies a first low voltage to the output terminal, in response to a gate signal output from at least one of following stages. The second holding part applies a second low voltage, which is less than the first low voltage, to the first node in response to a gate signal output from at least one stage among following stages.

    Abstract translation: 在包括级联的级的栅极驱动电路和每个级的输出门信号包括第一节点,输出部分,第一保持部分和第二保持部分。 响应于先前级之一的垂直起始信号和进位信号之一,第一节点的电压被转换成高电压。 输出部分响应于第一节点的高电压,通过输出端子输出第一时钟信号作为门信号。 响应于从至少一个后续级输出的门信号,第一保持部分向输出端施加第一低电压。 第二保持部分响应于从后续阶段中的至少一个级输出的门信号,向第一节点施加小于第一低电压的第二低电压。

    Gallium nitride based semiconductor devices and methods of manufacturing the same
    186.
    发明授权
    Gallium nitride based semiconductor devices and methods of manufacturing the same 有权
    基于氮化镓的半导体器件及其制造方法

    公开(公告)号:US08698162B2

    公开(公告)日:2014-04-15

    申请号:US13223847

    申请日:2011-09-01

    Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a Schottky electrode arranged on the GaN-based multi-layer. The HFET device may include a gate having a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

    Abstract translation: 基于氮化镓(GaN)的半导体器件及其制造方法。 GaN基半导体器件可以包括散热基板(即,导热基板); 布置在散热基板上并具有N面极性的GaN基多层; 以及布置在GaN基多层上的异质结构场效应晶体管(HFET)或肖特基电极。 HFET器件可以包括具有双凹槽结构的栅极。 虽然正在制造这种GaN基半导体器件,但是可以使用晶片接合工艺和激光剥离工艺。

    Method of manufacturing a vertically-structured GaN-based light emitting diode
    187.
    发明授权
    Method of manufacturing a vertically-structured GaN-based light emitting diode 有权
    制造垂直结构的GaN基发光二极管的方法

    公开(公告)号:US08686450B2

    公开(公告)日:2014-04-01

    申请号:US11892445

    申请日:2007-08-23

    CPC classification number: H01L33/20 H01L33/0079 H01L33/22 H01L2933/0083

    Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

    Abstract translation: 本发明涉及一种垂直构造的GaN基发光二极管的制造方法。 制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层,并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后,依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层,以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

    Method of driving display panel and display apparatus for performing the same
    188.
    发明授权
    Method of driving display panel and display apparatus for performing the same 有权
    驱动显示面板的方法和执行该显示面板的显示装置

    公开(公告)号:US08593444B2

    公开(公告)日:2013-11-26

    申请号:US13180749

    申请日:2011-07-12

    Abstract: A method of driving a display panel includes generating a gate on voltage, generating first and second gate off voltages based on an external voltage in a first operating mode, and first and second gate off voltages based on the gate on voltage in a second operating mode, generating a clock signal based on the gate on voltage and the second gate off voltage and outputting a gate voltage generated based on the clock signal and the first and second gate off voltages to a gate line of the display panel.

    Abstract translation: 驱动显示面板的方法包括:产生栅极导通电压,基于第一操作模式中的外部电压产生第一和第二栅极截止电压,以及基于第二工作模式中的栅极导通电压的第一和第二栅极截止电压 基于栅极导通电压和第二栅极截止电压产生时钟信号,并将基于时钟信号和第一和第二栅极截止电压产生的栅极电压输出到显示面板的栅极线。

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