公开(公告)号：US11244951B2

公开(公告)日：2022-02-08

申请号：US16927779

申请日：2020-07-13

Applicant: Micron Technology, Inc.

Inventor： Kamal M. Karda ,  Qian Tao ,  Durai Vishak Nirmal Ramaswamy ,  Haitao Liu ,  Kirk D. Prall ,  Ashonita Chavan

IPC: H01L27/00 ,  H01G4/08 ,  H01L27/11502 ,  H01L27/11507 ,  H01L49/02 ,  H01G4/33 ,  H01G4/40 ,  H01G4/008 ,  H01L27/108

Abstract: A memory cell includes a select device and a capacitor electrically coupled in series with the select device. The capacitor includes two conductive capacitor electrodes having ferroelectric material there-between. The capacitor has an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material. There is a parallel current leakage path from the one capacitor electrode to the other. The parallel current leakage path is circuit-parallel the intrinsic path and of lower total resistance than the intrinsic path. Other aspects are disclosed.

公开(公告)号：US20210375868A1

公开(公告)日：2021-12-02

申请号：US17396049

申请日：2021-08-06

Applicant: Micron Technology, Inc.

Inventor： Kamal M. Karda ,  Yi Fang Lee ,  Haitao Liu ,  Durai Vishak Nirmal Ramaswamy ,  Ramanathan Gandhi ,  Karthik Sarpatwari ,  Scott E. Sills ,  Sameer Chhajed

IPC: H01L27/105 ,  H01L27/092 ,  H01L27/12 ,  H01L29/66 ,  H01L29/267 ,  H01L29/423 ,  H01L29/786 ,  H01L29/24

Abstract: Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20210358538A1

公开(公告)日：2021-11-18

申请号：US17353090

申请日：2021-06-21

Applicant: Micron Technology, Inc.

Inventor： Kamal M. Karda ,  Haitao Liu ,  Karthik Sarpatwari ,  Durai Vishak Nirmal Ramaswamy

IPC: G11C11/4096 ,  H01L27/108 ,  G11C11/4094

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes multiple two-transistor (2T) memory cells. Each of the multiple 2T memory cells includes: a p-channel field effect transistor (PFET) including a charge storage node and a read channel portion, an n-channel field effect transistor (NFET) including a write channel portion that is directly coupled to the charge storage node of the PFET; a single bit line pair coupled to the read channel portion of the PFET; and a single access line overlapping at least part of each of the read channel portion and the write channel portion.

公开(公告)号：US11121223B2

公开(公告)日：2021-09-14

申请号：US16685205

申请日：2019-11-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Haitao Liu ,  Chandra Mouli

IPC: H01L21/28 ,  H01L21/763 ,  G11C16/04

Abstract: Field-effect transistors, and apparatus including such field-effect transistors, including a gate dielectric overlying a semiconductor and a control gate overlying the gate dielectric. The control gate might include an instance of a first polycrystalline silicon-containing material containing polycrystalline silicon, and an instance of a second polycrystalline silicon-containing material containing polycrystalline silicon-germanium or polycrystalline silicon-germanium-carbon.

公开(公告)号：US11107817B2

公开(公告)日：2021-08-31

申请号：US16298947

申请日：2019-03-11

Applicant: Micron Technology, inc.

Inventor： Kamal M. Karda ,  Yi Fang Lee ,  Haitao Liu ,  Durai Vishak Nirmal Ramaswamy ,  Ramanathan Gandhi ,  Karthik Sarpatwari ,  Scott E. Sills ,  Sameer Chhajed

IPC: H01L27/105 ,  H01L27/092 ,  H01L27/12 ,  H01L29/66 ,  H01L29/267 ,  H01L29/423 ,  H01L29/786 ,  H01L29/24

Abstract: Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20210265499A1

公开(公告)日：2021-08-26

申请号：US17316943

申请日：2021-05-11

Applicant: Micron Technology, Inc.

Inventor： Haitao Liu ,  Guangyu Huang ,  Chandra V. Mouli ,  Akira Goda ,  Deepak Chandra Pandey ,  Kamal M. Karda

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/24 ,  H01L29/423 ,  H01L29/267 ,  H01L27/11556 ,  H01L29/66 ,  H01L21/02 ,  H01L21/44 ,  H01L21/425 ,  H01L29/10 ,  H01L27/11582 ,  H01L29/786 ,  H01L27/1157

Abstract: A device includes a string driver comprising a channel region between a drain region and a source region. At least one of the channel region, the drain region, and the source region comprises a high band gap material. A gate region is adjacent and spaced from the high band gap material. The string driver is configured for high-voltage operation in association with an array of charge storage devices (e.g., 2D NAND or 3D NAND). Additional devices and systems (e.g., non-volatile memory systems) including the string drivers are disclosed, as are methods of forming the string drivers.

公开(公告)号：US11038027B2

公开(公告)日：2021-06-15

申请号：US16294759

申请日：2019-03-06

Applicant: Micron Technology, inc.

Inventor： Kamal M. Karda ,  Deepak Chandra Pandey ,  Haitao Liu ,  Richard J. Hill ,  Guangyu Huang ,  Yunfei Gao ,  Ramanathan Gandhi ,  Scott E. Sills

IPC: H01L29/267 ,  H01L29/786 ,  H01L27/108 ,  H01L29/207 ,  H01L29/08 ,  H01L29/16

Abstract: Some embodiments include an integrated assembly having a polycrystalline first semiconductor material, and having a second semiconductor material directly adjacent to the polycrystalline first semiconductor material. The second semiconductor material is of a different composition than the polycrystalline first semiconductor material. A conductivity-enhancing dopant is within the second semiconductor material. The conductivity-enhancing dopant is a neutral-type dopant relative to the polycrystalline first semiconductor material. An electrical gate is adjacent to a region of the polycrystalline first semiconductor material and is configured to induce an electric field within said region of the polycrystalline first semiconductor material. The gate is not adjacent to the second semiconductor material.

公开(公告)号：US20210151573A1

公开(公告)日：2021-05-20

申请号：US16685205

申请日：2019-11-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Haitao Liu ,  Chandra Mouli

IPC: H01L21/28 ,  H01L21/763 ,  G11C16/04

Abstract: Field-effect transistors, and apparatus including such field-effect transistors, including a gate dielectric overlying a semiconductor and a control gate overlying the gate dielectric. The control gate might include an instance of a first polycrystalline silicon-containing material containing polycrystalline silicon, and an instance of a second polycrystalline silicon-containing material containing polycrystalline silicon-germanium or polycrystalline silicon-germanium-carbon.

公开(公告)号：US10998440B2

公开(公告)日：2021-05-04

申请号：US16596407

申请日：2019-10-08

Applicant: Micron Technology, Inc.

Inventor： Kamal M. Karda ,  Ramanathan Gandhi ,  Hong Li ,  Haitao Liu ,  Durai Vishak Nirmal Ramaswamy ,  Sanh D. Tang ,  Scott E. Sills

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66

Abstract: A device comprises a vertical transistor. The vertical transistor comprises a semiconductive pillar, at least one gate electrode, a gate dielectric material, and void spaces. The semiconductive pillar comprises a source region, a drain region, and a channel region extending vertically between the source region and the drain region, the channel region comprising a semiconductive material having a band gap greater than 1.65 electronvolts. The at least one gate electrode laterally neighbors the semiconductive pillar. The gate dielectric material is laterally between the semiconductive pillar and the at least one gate electrode. The void spaces are vertically adjacent the gate dielectric material and laterally intervening between the at least one gate electrode and each of the source region and the drain region of the semiconductive pillar. Related electronic systems and methods are also disclosed.

公开(公告)号：US20210125997A1

公开(公告)日：2021-04-29

申请号：US16666709

申请日：2019-10-29

Applicant: Micron Technology, Inc.

Inventor： Litao Yang ,  Srinivas Pulugurtha ,  Haitao Liu

IPC: H01L27/108 ,  H01L27/06

Abstract: Some embodiments include an integrated assembly having an active region which contains semiconductor material. The active region includes first, second and third source/drain regions within the semiconductor material, includes a first channel region within the semiconductor material and between the first and second source/drain regions, and includes a second channel region within the semiconductor material and between the second and third source/drain regions. The semiconductor material includes at least one element selected from Group 13 of the periodic table. A digit line is electrically coupled with the second source/drain region. A first transistor gate is operatively proximate the first channel region. A second transistor gate is operatively proximate the second channel region. A first storage-element is electrically coupled with the first source/drain region. A second storage-element is electrically coupled with the third source/drain region. Some embodiments include methods of forming integrated assemblies.