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    Wafer placement correction in indexed multi-station processing chambers
    11.
    发明授权
    Wafer placement correction in indexed multi-station processing chambers 有权

    公开(公告)号：US12217985B2

    公开(公告)日：2025-02-04

    申请号：US17593791

    申请日：2020-03-27

    Applicant: Lam Research Corporation

    Inventor： Stephen Topping ,  Dong Niu

    IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687

    Abstract: Systems and techniques for determining and using multiple types of offsets for providing wafers to a transfer pedestal of a multi-station processing chamber are disclosed. Such techniques may be used to provide pedestal-specific offsets that may be selected based on which pedestal of a multi-station chamber is assigned to a particular wafer. Similar techniques may be used to provide wafer support-specific offsets based on which indexer arm of an indexer is assigned to a given wafer.

    Multi-state pulsing for achieving a balance between bow control and mask selectivity
    12.
    发明授权
    Multi-state pulsing for achieving a balance between bow control and mask selectivity 有权

    公开(公告)号：US12217972B2

    公开(公告)日：2025-02-04

    申请号：US17779520

    申请日：2020-12-03

    Applicant: Lam Research Corporation

    Inventor： Nikhil Dole ,  Merrett Tinlok Wong ,  Eric Hudson ,  Sangheon Lee ,  Xiaoqiang Yao

    IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065

    Abstract: A method for multi-state pulsing to achieve a balance between bow control and mask selectivity is described. The method includes generating a primary radio frequency (RF) signal. The primary RF signal pulses among three states including a first state, a second state, and a third state. The method further includes generating a secondary RF signal. The secondary RF signal pulses among the three states. During the first state, the primary RF signal has a power level that is greater than a power level of the secondary RF signal. Also, during the second state, the secondary RF signal has a power level that is greater than a power level of the primary RF signal. During the third state, power levels of the primary and secondary RF signals are approximately equal.

    Sorption chamber walls for semiconductor equipment
    13.
    发明授权
    Sorption chamber walls for semiconductor equipment 有权

    公开(公告)号：US12217945B2

    公开(公告)日：2025-02-04

    申请号：US17639324

    申请日：2020-08-06

    Applicant: Lam Research Corporation

    Inventor： Hossein Sadeghi ,  Richard A. Gottscho

    IPC: B01D53/04 ,  H01J37/32

    Abstract: A sorption structure used in a plasma process chamber includes an inner layer having one or more heating elements to heat the sorption structure, a middle section having a lattice structure and a coolant flow delivery network through which a coolant circulates to cool the sorption structure, and a vacuum flow network that is connected to a vacuum line to create low pressure vacuum. The lattice structure includes network of openings defined in a plurality of layers. The inner layer is disposed adjacent to the middle section and an outer layer of the lattice structure faces an interior region of the chamber. The openings in the layers of the lattice structure progressively increase in size from the inner layer to the outer layer. The lattice structure is used to adsorb by-products released in the process chamber and the vacuum flow network is used to remove the by-products.

    Method and apparatus for anisotropic pattern etching and treatment
    15.
    发明授权
    Method and apparatus for anisotropic pattern etching and treatment 有权

    公开(公告)号：US12205793B2

    公开(公告)日：2025-01-21

    申请号：US17163248

    申请日：2021-01-29

    Applicant: Lam Research Corporation

    Inventor： Seokmin Yun ,  Shuogang Huang ,  Zhimin Wan ,  Mark Merrill

    IPC: H01J37/305 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

    Abstract: Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The grid system is oriented so the ion beam is directed into the chamber toward the substrate support, and the array of holes of the grid system is defined vertically by a y-axis and horizontally by an x-axis, The array of holes is defined by hole densities that vary vertically in the y-axis such that the ion beam is caused to have an energy density gradient that is defined vertically in the y-axis.

    APPARATUS FOR AN INERT ANODE PLATING CELL
    16.
    发明申请
    APPARATUS FOR AN INERT ANODE PLATING CELL 有权

    公开(公告)号：US20250019857A1

    公开(公告)日：2025-01-16

    申请号：US18902715

    申请日：2024-09-30

    Applicant: Lam Research Corporation

    Inventor： Gregory Kearns ,  Bryan L. Buckalew ,  Jacob Kurtis Blickensderfer

    IPC: C25D17/00 ,  C25D5/08 ,  C25D7/12 ,  C25D17/06 ,  C25D17/12

    Abstract: An electroplating apparatus for wafer electroplating includes a wafer holder, a plating cell containing electrolyte, and a membrane-less anode chamber within the plating cell. The chamber houses an apertured charge plate and a meshed anode positioned above it. The configuration forces all electrolyte flow through the charge plate and meshed anode upwardly to the wafer. Standoff pins support the meshed anode above the charge plate at a selected distance. A flow-shaping plate may be positioned between the wafer and meshed anode. The meshed anode can be a composite of multiple displaced layers, creating varied pores. The charge plate includes precisely spaced and sized holes. Methods of using the apparatus involve providing these components, disposing the chamber within the plating cell, containing electrolyte, and forcing flow upward through the charge plate and meshed anode to the wafer. This design enhances irrigation flow and improves plating formation.

    SHOWERHEAD WITH HOLE SIZES FOR RADICAL SPECIES DELIVERY
    19.
    发明申请
    SHOWERHEAD WITH HOLE SIZES FOR RADICAL SPECIES DELIVERY 有权

    公开(公告)号：US20250006515A1

    公开(公告)日：2025-01-02

    申请号：US18703982

    申请日：2022-10-27

    Applicant: Lam Research Corporation

    Inventor： Aaron Blake MILLER ,  Gopinath BHIMARASETTI ,  Kyle Watt HART

    IPC: H01L21/67 ,  B05B1/14 ,  H01J37/32

    Abstract: A showerhead comprises a first set of holes and a second set of holes. The first set of holes have a greater diameter and length than the second set of holes. The first set of holes extend through a thickness of the showerhead. In some embodiments, the showerhead includes a base portion and a cylindrical portion extending perpendicularly from the base portion. The base portion may define a plenum that is in fluid communication with the second set of holes but separate from the first set of holes. The second set of holes extend from the plenum to a bottom surface of the showerhead. In some implementations, the first diameter of the first set of holes may be optimized to filter ions from a plasma, pass radicals from the plasma through the showerhead, and to limit back-diffusion of precursors through the showerhead.

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