METHOD FOR PRODUCING PURIFIED AQUEOUS HYDROGEN PEROXIDE SOLUTION

    公开(公告)号:US20240279060A1

    公开(公告)日:2024-08-22

    申请号:US18570142

    申请日:2022-06-20

    摘要: Provided is a method for producing aqueous hydrogen peroxide solution, the method capable of reducing impurities such as organic substances and preventing the occurrence of foaming and odor. The solution for the aforementioned problems is a method for producing a purified aqueous hydrogen peroxide solution, the method including a predetermined osmosis membrane treatment process of bringing a crude aqueous hydrogen peroxide solution containing impurities into contact with a reverse osmosis membrane. That is, the aforementioned problems are solved by a method for producing a purified aqueous hydrogen peroxide solution, in which a first integrated value that is the integrated value of the pressure and the linear velocity are adjusted so that the pressure of reverse osmosis membrane (MPaG) and the linear velocity of the aqueous hydrogen peroxide solution (m3/(m2·h)) is less than 0.15 in the osmosis membrane treatment process.

    METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENTS

    公开(公告)号:US20240170278A1

    公开(公告)日:2024-05-23

    申请号:US18283083

    申请日:2022-03-18

    IPC分类号: H01L21/02 H01L21/306

    摘要: Provided is a method for producing a semiconductor substrate for high-performance memory elements with high production efficiency.
    The method for producing a semiconductor substrate for memory elements, comprising a step (1) of bringing a semiconductor substrate including a titanium-containing film that includes at least one of titanium and a titanium alloy, a metallic tungsten film, and a tungsten oxide film into contact with a pretreatment agent to remove at least a part of the tungsten oxide film; and a step (2) of bringing the semiconductor substrate after being subjected to the step (1) into contact with an etching agent to remove at least a part of the titanium-containing film, wherein the pretreatment agent includes at least one tungsten oxide etchant that is selected from the group consisting of acids, ammonia, and ammonium salts.