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11.发明申请NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件公开(公告)号：US20070166871A1
公开(公告)日：2007-07-19
申请号：US11508925
申请日：2006-08-24
Applicant: Eun Jeong Jeong , Joo Young Kim , Hyun Sik Moon , Bang Lin Lee , Kook Min Han , Eun Kyung Lee
Inventor： Eun Jeong Jeong , Joo Young Kim , Hyun Sik Moon , Bang Lin Lee , Kook Min Han , Eun Kyung Lee
IPC: H01L51/40 , C07D417/14 , C07D497/14
CPC classification number: C07D495/04 , C07D417/14 , H01L51/0545 , H01L51/5048
Abstract: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.
Abstract translation: 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。
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公开(公告)号：US09790236B2
公开(公告)日：2017-10-17
申请号：US13349141
申请日：2012-01-12
Applicant: Jeong-il Park , Bang Lin Lee , Jong Won Chung
Inventor： Jeong-il Park , Bang Lin Lee , Jong Won Chung
IPC: C07D513/06 , C07D495/06 , H01L51/00 , H01L51/05
CPC classification number: C07D513/06 , C07D495/06 , H01L51/0036 , H01L51/0043 , H01L51/0068 , H01L51/0071 , H01L51/0558
Abstract: An example embodiment relates to an organic semiconductor compound, represented by Chemical Formula 1 herein, which may be polymerized and used in transistors and electronic devices. The organic semiconductor compound includes a base structure of four fused benzene rings with functional groups R1 to R3 connected to a first benzene ring and with functional groups R4 to R6 connected to a second benzene ring. The base structure's third and fourth benzene rings are connected to X1, X2 and X3, X4 respectfully. At least one of X1 and X2 is a sulfur atom. At least one of X3 and X4 is a sulfur atom. The base structure further includes functional groups R7 and R8.
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13.发明授权Organic semiconductor composition, and transistor and electronic device including a polymer therefrom 有权有机半导体组合物，以及包括其聚合物的晶体管和电子器件公开(公告)号：US08816330B2
公开(公告)日：2014-08-26
申请号：US13166425
申请日：2011-06-22
Applicant: Jong Won Chung , Do-Hwan Kim , Bang Lin Lee , Jeong il Park , Yong Wan Jin , Sang Yoon Lee
Inventor： Jong Won Chung , Do-Hwan Kim , Bang Lin Lee , Jeong il Park , Yong Wan Jin , Sang Yoon Lee
CPC classification number: H01L51/0036 , C08G2261/162 , C08G2261/1646 , C08G2261/3223 , C08G2261/3229 , C08G2261/3243 , C08G2261/91 , C08G2261/92 , C08G2261/94 , C08G2261/95 , C08K3/10 , C08K3/16 , H01L51/0069 , H01L51/0541 , H01L51/0545 , C08L65/00
Abstract: An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.
Abstract translation: 用于半导体器件的有机组合物包括用于包括结构单元的有机半导体器件的化合物; 以及选自含过渡金属元素的化合物，含镧系元素的化合物及其组合的含金属化合物，由于晶界降低而导致电荷迁移率提高。
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14.发明授权Organic semiconductor polymer, transistor including an organic semiconductor polymer and methods of fabricating the same 有权有机半导体聚合物，包含有机半导体聚合物的晶体管及其制造方法公开(公告)号：US08809839B2
公开(公告)日：2014-08-19
申请号：US12801959
申请日：2010-07-06
Applicant: Bang-Lin Lee , Do-Hwan Kim , Jeong-il Park , Ji-Youl Lee
Inventor： Bang-Lin Lee , Do-Hwan Kim , Jeong-il Park , Ji-Youl Lee
CPC classification number: C08G61/126 , C08G2261/146 , C08G2261/1644 , C08G2261/18 , C08G2261/411 , C08G2261/414 , C08G2261/92 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0541 , H01L51/0545 , Y02E10/549
Abstract: An organic semiconductor polymer, a transistor including an organic semiconductor polymer and methods of fabricating the same are provided, the organic semiconductor polymer including an aromatic or heteroaromatic main chain and at least one of a fluoro or a perfluoroalkyl at a polymer terminal end.
Abstract translation: 提供有机半导体聚合物，包括有机半导体聚合物的晶体管及其制造方法，所述有机半导体聚合物包含芳族或杂芳族主链和聚合物末端的氟代或全氟烷基中的至少一种。
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15.发明授权Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same 有权有机聚合物半导体，其制备方法和使用其的双极性有机薄膜晶体管公开(公告)号：US08354666B2
公开(公告)日：2013-01-15
申请号：US11790755
申请日：2007-04-27
Applicant: Bang Lin Lee , Eun Kyung Lee , Kook Min Han
Inventor： Bang Lin Lee , Eun Kyung Lee , Kook Min Han
IPC: H01L51/00
CPC classification number: H01L51/0036 , C08G61/122 , C08G61/124 , C08G61/125 , C08G61/126 , C09K11/06 , C09K2211/1458 , C09K2211/1466 , H01L51/0545 , H05B33/14
Abstract: Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.
Abstract translation: 公开了有机聚合物半导体，使用该有机聚合物半导体的双极性有机薄膜晶体管，包含双极性有机薄膜晶体管的电子器件及其制造方法。 示例性实施方案涉及有机聚合物半导体，其可以包括具有p型半导体性质的芳族环衍生物和在其主链中具有n型半导体性质的杂芳族环，因此可以表现出p型晶体管性质和 当用于电子器件的有机活性层（例如有机薄膜晶体管，使用这种有机聚合物半导体的双极性有机薄膜晶体管），包括双极性有机薄膜晶体管的电子器件和方法 的制造。
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Patent Agency Ranking
16.发明授权Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units 有权含有低聚噻吩和n型杂芳族单元的有机半导体共聚物公开(公告)号：US08313978B2
公开(公告)日：2012-11-20
申请号：US13200407
申请日：2011-09-23
Applicant: Bang Lin Lee , Kook Min Han , Jung Han Shin , Sang Yoon Lee , Eun Jeong Jeong
Inventor： Bang Lin Lee , Kook Min Han , Jung Han Shin , Sang Yoon Lee , Eun Jeong Jeong
IPC: H01L51/54
CPC classification number: H01L51/0043 , H01L51/0036 , H01L51/0512 , Y10T428/31533
Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
Abstract translation: 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。
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17.发明申请LOW BAND-GAP ORGANIC SEMICONDUCTOR COMPOUNDS, AND TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE SAME 有权低带隙有机半导体化合物，以及包括其的晶体管和电子器件公开(公告)号：US20120168727A1
公开(公告)日：2012-07-05
申请号：US13211810
申请日：2011-08-17
Applicant: Bang Lin Lee , Jeong il Park , Jong Won Chung
Inventor： Bang Lin Lee , Jeong il Park , Jong Won Chung
IPC: H01L51/30 , C08F228/06
CPC classification number: H01L51/0036 , B82Y10/00 , C08G61/122 , C08G61/123 , C08G2261/124 , C08G2261/3223 , C08G2261/3241 , C08G2261/3243 , C08G2261/414 , C08G2261/91 , C08G2261/92 , C09B69/109 , H01L51/0043 , H01L51/0047 , H01L51/0558 , H01L51/4253 , Y02E10/549
Abstract: An organic semiconductor compound including a structural unit represented by Chemical Formula 1.
Abstract translation: 包含由化学式1表示的结构单元的有机半导体化合物。
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18.发明授权Organic semiconductor copolymers containing oligothiophene and η-type heteroaromatic units 有权含有低聚噻吩和异构芳香族单元的有机半导体共聚物公开(公告)号：US08053764B2
公开(公告)日：2011-11-08
申请号：US12054134
申请日：2008-03-24
Applicant: Bang Lin Lee , Kook Min Han , Jung Han Shin , Sang Yoon Lee , Eun Jeong Jeong
Inventor： Bang Lin Lee , Kook Min Han , Jung Han Shin , Sang Yoon Lee , Eun Jeong Jeong
IPC: H01L51/54
CPC classification number: H01L51/0043 , H01L51/0036 , H01L51/0512 , Y10T428/31533
Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
Abstract translation: 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。
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19.发明授权Composition for forming organic insulating film and method for forming pattern of organic insulating film using the same 失效用于形成有机绝缘膜的组合物和使用其形成有机绝缘膜的图案的方法公开(公告)号：US07645556B2
公开(公告)日：2010-01-12
申请号：US11156489
申请日：2005-06-21
Applicant: Jung Han Shin , Tae Woo Lee , Bon Won Koo , Bang Lin Lee , Sang Yoon Lee
Inventor： Jung Han Shin , Tae Woo Lee , Bon Won Koo , Bang Lin Lee , Sang Yoon Lee
CPC classification number: H01L21/31133 , H01L21/0274 , H01L51/052
Abstract: A photo-patternable composition for forming an organic insulating film which includes (i) a functional group-containing monomer, (ii) an initiator generating an acid or a radical upon light irradiation, and (iii) an organic or inorganic polymer. Further disclosed is a method for forming a pattern of an organic insulating film using the composition. Since an organic insulating film can be simply patterned without involving any photoresist process, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.
Abstract translation: 一种用于形成有机绝缘膜的光可图案组合物，其包含（i）含官能团的单体，（ii）在光照射时产生酸或自由基的引发剂，和（iii）有机或无机聚合物。 还公开了使用该组合物形成有机绝缘膜的图案的方法。 由于有机绝缘膜可以简单地构图而不涉及任何光致抗蚀剂工艺，所以整个工艺被简化，并且最终可以通过所有湿法制造具有高电荷载流子迁移率的有机薄膜晶体管。
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20.发明申请Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same 有权有机聚合物半导体，其制备方法和使用其的双极性有机薄膜晶体管公开(公告)号：US20080099758A1
公开(公告)日：2008-05-01
申请号：US11790755
申请日：2007-04-27
Applicant: Bang Lin Lee , Eun Kyung Lee , Kook Min Han
Inventor： Bang Lin Lee , Eun Kyung Lee , Kook Min Han
CPC classification number: H01L51/0036 , C08G61/122 , C08G61/124 , C08G61/125 , C08G61/126 , C09K11/06 , C09K2211/1458 , C09K2211/1466 , H01L51/0545 , H05B33/14
Abstract: Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.
Abstract translation: 公开了有机聚合物半导体，使用该有机聚合物半导体的双极性有机薄膜晶体管，包含双极性有机薄膜晶体管的电子器件及其制造方法。 示例性实施方案涉及有机聚合物半导体，其可以包括具有p型半导体性质的芳族环衍生物和在其主链中具有n型半导体性质的杂芳族环，因此可以表现出p型晶体管性质和 当用于电子器件的有机活性层（例如有机薄膜晶体管，使用这种有机聚合物半导体的双极性有机薄膜晶体管），包括双极性有机薄膜晶体管的电子器件和方法 的制造。
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