公开(公告)号：US07645556B2

公开(公告)日：2010-01-12

申请号：US11156489

申请日：2005-06-21

申请人： Jung Han Shin ,  Tae Woo Lee ,  Bon Won Koo ,  Bang Lin Lee ,  Sang Yoon Lee

发明人： Jung Han Shin ,  Tae Woo Lee ,  Bon Won Koo ,  Bang Lin Lee ,  Sang Yoon Lee

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： H01L21/31133 ,  H01L21/0274 ,  H01L51/052

摘要： A photo-patternable composition for forming an organic insulating film which includes (i) a functional group-containing monomer, (ii) an initiator generating an acid or a radical upon light irradiation, and (iii) an organic or inorganic polymer. Further disclosed is a method for forming a pattern of an organic insulating film using the composition. Since an organic insulating film can be simply patterned without involving any photoresist process, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.

摘要翻译： 一种用于形成有机绝缘膜的光可图案组合物，其包含（i）含官能团的单体，（ii）在光照射时产生酸或自由基的引发剂，和（iii）有机或无机聚合物。 还公开了使用该组合物形成有机绝缘膜的图案的方法。 由于有机绝缘膜可以简单地构图而不涉及任何光致抗蚀剂工艺，所以整个工艺被简化，并且最终可以通过所有湿法制造具有高电荷载流子迁移率的有机薄膜晶体管。

公开(公告)号：US07019327B2

公开(公告)日：2006-03-28

申请号：US10732243

申请日：2003-12-11

申请人： Bang Lin Lee ,  Eun Jeong Jeong ,  Jung Han Shin ,  Bon Won Koo ,  In Nam Kang

发明人： Bang Lin Lee ,  Eun Jeong Jeong ,  Jung Han Shin ,  Bon Won Koo ,  In Nam Kang

IPC分类号： H01L35/24

CPC分类号： H01L51/0036 ,  C08G61/123 ,  C08G61/126 ,  H01B1/127 ,  H01L51/0003 ,  H01L51/0545

摘要： An organic semiconductor polymer for a thin film transistor, the polymer comprising a unit having n-type semiconductor properties and a unit having p-type semiconductor properties in the polymer backbone, and an organic thin film transistor using the same.

摘要翻译： 一种用于薄膜晶体管的有机半导体聚合物，该聚合物包含具有n型半导体特性的单元和在该聚合物主链中具有p型半导体特性的单元，以及使用其的有机薄膜晶体管。

公开(公告)号：US20070194305A1

公开(公告)日：2007-08-23

申请号：US11606287

申请日：2006-11-30

申请人： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

发明人： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

IPC分类号： H01L29/08

CPC分类号： H01L51/105 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

摘要： Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

摘要翻译： 公开了一种有机薄膜晶体管，其包括基板，栅极电极，栅极绝缘层，有机半导体层和源极/漏极，其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例，由于源极/漏极之间的接触电阻降低，有机薄膜晶体管可能具有增加的电荷迁移率和I / 有机半导体层。 此外，在形成有机半导体层和绝缘膜时，可以更容易地应用湿法，从而简化制造工艺并降低制造成本。

公开(公告)号：US07646014B2

公开(公告)日：2010-01-12

申请号：US11606287

申请日：2006-11-30

申请人： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

发明人： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

IPC分类号： H01L35/24

CPC分类号： H01L51/105 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

摘要： Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

摘要翻译： 公开了一种有机薄膜晶体管，其包括基板，栅极电极，栅极绝缘层，有机半导体层和源极/漏极，其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例，由于源/漏电极和有机半导体层之间的接触电阻降低，有机薄膜晶体管可能具有增加的电荷迁移率和Ion / Ioff比。 此外，在形成有机半导体层和绝缘膜时，可以更容易地应用湿法，从而简化制造工艺并降低制造成本。

公开(公告)号：US07364940B2

公开(公告)日：2008-04-29

申请号：US11296704

申请日：2005-12-08

申请人： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

发明人： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

IPC分类号： H01L51/40

CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/3127 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.

摘要翻译： 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。 有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜 在栅绝缘层和有机半导体层之间。 有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。 此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。

公开(公告)号：US08313978B2

公开(公告)日：2012-11-20

申请号：US13200407

申请日：2011-09-23

申请人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

发明人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC分类号： H01L51/54

CPC分类号： H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

摘要翻译： 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

公开(公告)号：US08053764B2

公开(公告)日：2011-11-08

申请号：US12054134

申请日：2008-03-24

申请人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

发明人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC分类号： H01L51/54

CPC分类号： H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

摘要翻译： 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

公开(公告)号：US20120077949A1

公开(公告)日：2012-03-29

申请号：US13200407

申请日：2011-09-23

申请人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

发明人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC分类号： C08G79/08 ,  C08G75/32 ,  C08G75/06

CPC分类号： H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

公开(公告)号：US07368510B2

公开(公告)日：2008-05-06

申请号：US11073691

申请日：2005-03-08

申请人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

发明人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC分类号： C08F8/18 ,  H01L29/08 ,  H01L29/02 ,  H01L51/30 ,  H01B1/12

CPC分类号： H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

摘要翻译： 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

公开(公告)号：US08679984B2

公开(公告)日：2014-03-25

申请号：US13173986

申请日：2011-06-30

申请人： Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong Il Park ,  Yong Wan Jin ,  Sang Yoon Lee

发明人： Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong Il Park ,  Yong Wan Jin ,  Sang Yoon Lee

IPC分类号： H01L21/461

CPC分类号： H01L51/0558 ,  H01L51/0003 ,  H01L51/0026 ,  H01L51/0541 ,  H01L51/0545

摘要： An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.

摘要翻译： 示例性实施例涉及一种制造电气设备阵列的方法，其包括将包括微通道结构的平台附接到基板。 该方法包括将第一和第二溶液注入到微通道结构中以形成至少三个液膜柱，其中第一和第二溶液包括不同的溶剂组成比，并且液柱各自包括不同的溶剂组成比。 该方法还包括将基板分离，从液膜柱移除溶剂以形成薄膜柱，以及沿着薄膜柱的长度方向在不同条件下处理薄膜柱。 从薄膜柱中除去溶剂，并在薄膜柱的长度方向上在不同的条件下处理薄膜柱。