公开(公告)号：US5216385A

公开(公告)日：1993-06-01

申请号：US926317

申请日：1992-08-10

申请人： Bart R. McDaniel

发明人： Bart R. McDaniel

IPC分类号： H03G3/00 ,  H03G3/12

CPC分类号： H03G3/12 ,  H03G3/001

摘要： A MOS voltage trim amplifier which can multiply an input voltage with a quantized value to generate an output voltage. The MOS trim amplifier comprises a MOS op-amp, a multiplying feedback network, a gate-bias network and startup circuit. The MOS op-amp has a noninverting terminal for receiving the input and an inverting terminal for receiving the feedback network. The multiplying feedback network uses two MOSFETs as feedback elements to provide the voltage ratio for the multiplication. The gate-bias network provides a reference voltage which is a fraction of the input voltage through a MOSFET voltage divider to the feedback MOSFETs. Current mirrors are employed in the gate-bias network to provide a constant stable current through the MOSFET voltage divider to avoid loading the input. The startup circuit generates a bias current to the two feedback MOSFETs to drive them out of their natural off state.

摘要翻译： MOS电压调整放大器，其可以将输入电压与量化倍数相乘以产生输出电压。 MOS微调放大器包括MOS运算放大器，乘法反馈网络，门偏置网络和启动电路。 MOS运算放大器具有用于接收输入的同相端子和用于接收反馈网络的反相端子。 倍增反馈网络使用两个MOSFET作为反馈元件来提供乘法电压比。 栅极偏置网络提供的参考电压是通过MOSFET分压器到反馈MOSFET的输入电压的一小部分。 栅极偏置网络中采用电流镜来提供恒定的稳定电流通过MOSFET分压器，以避免加载输入。 启动电路产生一个偏置电流到两个反馈MOSFET，以驱使它们脱离其自然关断状态。

公开(公告)号：US6166985A

公开(公告)日：2000-12-26

申请号：US302729

申请日：1999-04-30

申请人： Bart R. McDaniel ,  Lawrence T. Clark

发明人： Bart R. McDaniel ,  Lawrence T. Clark

IPC分类号： G11C11/407 ,  G11C11/412 ,  G11C11/413 ,  G11C11/417 ,  G11C11/418 ,  H03K19/00 ,  H03K19/0948 ,  G11C8/00

CPC分类号： H03K19/0016 ,  G11C11/412 ,  G11C11/417 ,  G11C11/418

摘要： In one embodiment, the present invention provides a circuit that includes a core circuit and a control circuit coupled to the core circuit. The control circuit reduces a leakage current in the core circuit when the core circuit is in a Sleep mode. The control circuit maintains a logic state of the core circuit when the core circuit is in a Drowsy mode.

摘要翻译： 在一个实施例中，本发明提供一种包括核心电路和耦合到核心电路的控制电路的电路。 当核心电路处于睡眠模式时，控制电路减小了核心电路中的漏电流。 当核心电路处于睡眠模式时，控制电路保持核心电路的逻辑状态。

公开(公告)号：US5592111A

公开(公告)日：1997-01-07

申请号：US355859

申请日：1994-12-14

申请人： Keng L. Wong ,  Alexander Waizman ,  Bart R. McDaniel

发明人： Keng L. Wong ,  Alexander Waizman ,  Bart R. McDaniel

IPC分类号： G06F11/00 ,  G01R23/02 ,  H03D3/00

CPC分类号： G06F11/0757 ,  G06F11/076

摘要： A speed governor for an integrated circuit which prevents the operation of the integrated circuit above a selected frequency. The speed governor generates a frequency reference and compares the frequency reference to the frequency of the external clock signal that clocks the integrated circuit. As a result of the comparison, if the frequency of the input clock signal is greater than the frequency reference then operation of the integrated circuit is disrupted.

摘要翻译： 用于集成电路的调速器，其防止集成电路在选定频率之上的操作。 调速器产生频率参考，并将频率参考值与对集成电路进行时钟的外部时钟信号的频率进行比较。 作为比较的结果，如果输入时钟信号的频率大于频率参考值，则集成电路的操作被中断。

公开(公告)号：US5243236A

公开(公告)日：1993-09-07

申请号：US816149

申请日：1991-12-31

申请人： Bart R. McDaniel

发明人： Bart R. McDaniel

IPC分类号： H03K3/356 ,  H03K17/081 ,  H03K17/10

CPC分类号： H03K17/08104 ,  H03K17/102 ,  H03K3/356017 ,  H03K3/356113

摘要： A high voltage CMOS n-well switch with guarding against reverse junction breakdown, as well as gate-aided breakdown. The CMOS switch of the present invention comprises two pairs of cascoding p-channel MOSFET loads, two pairs of cascoding n-channel MOSFET drivers and an inverter for input. One device in each pair of MOSFETs is used as a guard against gate-aided breakdown. The p-channel MOSFETs have independent n-wells so that the guard devices have their n-wells independently biased without being pulled by the n-wells of the load devices. The inverter is used to provide complementary inputs to the switch. By having independent n-wells, the breakdown voltage of the switch is raised above p+/n-well reverse breakdown voltage.

摘要翻译： 高压CMOS n阱开关，具有防止反向结击穿，以及栅极辅助击穿。 本发明的CMOS开关包括两对级联p沟道MOSFET负载，两对级联n沟道MOSFET驱动器和用于输入的反相器。 每对MOSFET中的一个器件用作防止栅极辅助击穿的保护器件。 p沟道MOSFET具有独立的n阱，使得保护器件的n阱独立地被偏置，而不被负载器件的n阱拉动。 逆变器用于为开关提供互补的输入。 通过具有独立的n阱，开关的击穿电压升高到高于p + / n阱反向击穿电压。

公开(公告)号：US5180988A

公开(公告)日：1993-01-19

申请号：US816153

申请日：1991-12-31

申请人： Bart R. McDaniel

发明人： Bart R. McDaniel

IPC分类号： H03G3/00 ,  H03G3/12

CPC分类号： H03G3/12 ,  H03G3/001

摘要： A MOS voltage trim amplifier which can multiply an input voltage with a quantized value to generate an output voltage. The MOS trim amplifier comprises a MOS op-amp, a multiplying feedback network, a gate-bias network and startup circuit. The MOS op-amp has a noninverting terminal for receiving the input and an inverting terminal for receiving the feedback network. The multiplying feed back network uses two MOSFETs as feedback elements to provide the voltage ratio for the multiplication. The gate-bias network provides a reference voltage which is a fraction of the input voltage through a MOSFET voltage divider to the feedback MOSFETs. Current mirrors are employed in the gate-bias network to provide a constant stable current through the MOSFET voltage divider to avoid loading the input. The startup circuit generates a bias current to the two feedback MOSFETs to drive them out of their natural off state.

摘要翻译： MOS电压调整放大器，其可以将输入电压与量化倍数相乘以产生输出电压。 MOS微调放大器包括MOS运算放大器，乘法反馈网络，门偏置网络和启动电路。 MOS运算放大器具有用于接收输入的同相端子和用于接收反馈网络的反相端子。 倍增反馈网络使用两个MOSFET作为反馈元件来提供乘法的电压比。 栅极偏置网络提供的参考电压是通过MOSFET分压器到反馈MOSFET的输入电压的一小部分。 栅极偏置网络中采用电流镜来提供恒定的稳定电流通过MOSFET分压器，以避免加载输入。 启动电路产生一个偏置电流到两个反馈MOSFET，以驱使它们脱离其自然关断状态。