公开(公告)号：US20100167490A1

公开(公告)日：2010-07-01

申请号：US12629920

申请日：2009-12-03

Applicant: Jong-wan Choi ,  Yong-soon Choi ,  Bo-young Lee ,  Eunkee Hong ,  Eun-kyung Baek ,  Ju-seon Goo

Inventor： Jong-wan Choi ,  Yong-soon Choi ,  Bo-young Lee ,  Eunkee Hong ,  Eun-kyung Baek ,  Ju-seon Goo

IPC: H01L21/762

CPC classification number: H01L27/11521 ,  H01L27/11524

Abstract: Provided are methods of fabricating flash memory devices that may prevent a short circuit from occurring between cell gate lines. Methods of fabricating such flash memory devices may include forming gate lines including a series of multiple cell gate lines and multiple selection gate lines. Each gate line may include a stacked structure of a tunnel insulating layer, a floating gate, a gate insulating layer, and/or a polysilicon layer operable to be a control gate, all formed on a semiconductor substrate. Methods may include forming a first insulating layer that selectively fills gaps between the cell gate lines from the bottom up and between adjacent ones of the cell gate lines and the selection gate lines, and does not fill a space located on outer sides of the selection gate lines that are opposite the plurality of cell gate lines. A spacer may be formed on the outer sides of the selection gate lines that are opposite to the cell gate lines, after forming the first insulating layer. A second insulating layer may be formed in a space where the spacer is formed.

Abstract translation: 提供了制造闪存器件的方法，其可以防止在单元栅极线之间发生短路。 制造这种闪存器件的方法可以包括形成包括一系列多单元栅极线和多个选择栅极线的栅极线。 每个栅极线可以包括全部形成在半导体衬底上的隧道绝缘层，浮动栅极，栅极绝缘层和/或可操作为控制栅极的多晶硅层的堆叠结构。 方法可以包括形成第一绝缘层，其选择性地从底部向上和相邻的单元栅极线和选择栅极线之间填充单元栅极线之间的间隙，并且不填充位于选择栅极的外侧的空间 与多个单元栅极线相对的线。 在形成第一绝缘层之后，可以在选择栅极线的与单元栅极线相对的外侧上形成间隔物。 可以在形成间隔物的空间中形成第二绝缘层。

公开(公告)号：US20100109211A1

公开(公告)日：2010-05-06

申请号：US12325726

申请日：2008-12-01

Applicant: Bo Young LEE ,  Jae Seong KIM ,  Woong Ki HWANG

Inventor： Bo Young LEE ,  Jae Seong KIM ,  Woong Ki HWANG

IPC: C21D1/78

CPC classification number: G01N3/60 ,  G01N2203/0062

Abstract: An apparatus for forming longitudinal thermal fatigue cracks. A heating unit has an induction coil disposed adjacent to an outer circumference of one side of a tubular test piece, on an inner surface of which a notch is formed. A cooling unit has a cooling water pump and a cooling water hose which forcibly injects cooling water from a cooling water storage source into an inner circumference of the tubular test piece. A control unit controls operation of the heating and cooling units. A cooling block partially encloses the outer circumference of the tubular test piece so as to control a magnitude of y-axial stress, is supplied with a cooling source of fluid or gas from an outside so as to repetitively cool the tubular test piece heated by the heating unit to adjust a temperature gradient, and has a longitudinal slit for controlling crack positions.

Abstract translation: 一种用于形成纵向热疲劳裂纹的装置。 加热单元具有与管状试验片的一侧的外周相邻配置的感应线圈，其内表面形成有切口。 冷却单元具有冷却水泵和冷却水软管，其将冷却水从冷却水存储源强制地注入到管状试验片的内周。 控制单元控制加热和冷却单元的操作。 冷却块部分地包围管状试件的外周，以便控制y轴向应力的大小，从外部向流体或气体供给冷却源，以便重复地冷却由 加热单元来调节温度梯度，并且具有用于控制裂纹位置的纵向狭缝。

公开(公告)号：US20100091930A1

公开(公告)日：2010-04-15

申请号：US12325877

申请日：2008-12-01

Applicant: Bo Young LEE ,  Jae Seong KIM ,  Woong Ki HWANG

Inventor： Bo Young LEE ,  Jae Seong KIM ,  Woong Ki HWANG

IPC: G21C9/00

CPC classification number: G01N17/00 ,  G21C17/00

Abstract: An apparatus for forming stress corrosion cracks comprises a heating unit which includes a conductive member and a heating coil disposed adjacent to the conductive member to generate steam pressure in the tube specimen, an end holding unit, and a control unit for controlling the heating unit and the end holding unit. The stress corrosion cracks occurring in the equipment of nuclear power plants or apparatus industries during operation can be directly formed in a tube specimen using steam pressure under conditions similar to those of the actual environment of nuclear power plants, thus increasing accuracy for analysis of properties of stress corrosion cracks which are in actuality generated, thereby improving reliability of nuclear power plants or apparatus industries and effectively assuring nondestructive testing capability, resulting in very useful industrial applicability.

Abstract translation: 用于形成应力腐蚀裂纹的装置包括加热单元，其包括导电构件和邻近导电构件设置的加热线圈，以在管样本中产生蒸汽压力，端部保持单元和用于控制加热单元的控制单元， 末端保持单元。 核电站或设备工业设备在运行过程中产生的应力腐蚀裂纹，可以直接在管状试样上形成，在与核电厂实际环境条件相似的条件下，采用蒸汽压力，从而提高分析性能的准确性 实际产生的应力腐蚀裂纹，从而提高核电厂或设备行业的可靠性，有效保证无损检测能力，从而产生非常有用的工业应用。

公开(公告)号：US20070295099A1

公开(公告)日：2007-12-27

申请号：US11625706

申请日：2007-01-22

Applicant: Bo-Young LEE ,  Duck Hee Ryu ,  Jae Seong Kim ,  Yong Kim ,  Dae Hwan An

Inventor： Bo-Young LEE ,  Duck Hee Ryu ,  Jae Seong Kim ,  Yong Kim ,  Dae Hwan An

IPC: G01N3/32

CPC classification number: G01N3/60 ,  G01N2203/0066 ,  G01N2203/0073 ,  G01N2203/027

Abstract: Disclosed is an apparatus and method for forming thermal fatigue cracks in a test piece for performance demonstration of nondestructive testing. The apparatus for forming thermal fatigue cracks includes a heating unit, having a conductive member attached around the outer surface of a pipe test piece and an induction heating coil disposed adjacent to the conductive member; a cooling unit, having a cooling water pump for forcibly supplying cooling water to the inner surface of the pipe test piece from a cooling water storage source and a cooling water hose; and a control unit for controlling operation of the heating unit and the cooling unit. Accordingly, thermal fatigue cracks similar to actual thermal fatigue cracks occurring during the operation of nuclear power plants or processing industry equipment are formed in a test piece, thereby assuring effective performance demonstration of nondestructive testing.

Abstract translation: 公开了一种用于在无损检测的性能演示中形成试验片中的热疲劳裂纹的装置和方法。 用于形成热疲劳裂纹的装置包括加热单元，其具有附接在管道试件的外表面上的导电构件和邻近导电构件设置的感应加热线圈; 冷却单元，具有冷却水泵，用于从冷却水存储源和冷却水软管向管道试件的内表面强制供给冷却水; 以及用于控制加热单元和冷却单元的操作的控制单元。 因此，在试验片中形成类似于在核电厂或加工工业设备运行期间发生的实际热疲劳裂纹的热疲劳裂纹，从而确保了非破坏性试验的有效性能演示。

公开(公告)号：US20210284367A1

公开(公告)日：2021-09-16

申请号：US16614398

申请日：2018-05-21

Applicant: Bo-Young LEE

Inventor： Bo-Young LEE

IPC: B65B7/28 ,  B65B65/02

Abstract: A seal-packaging machine for a food container is proposed. The seal-packaging machine includes: a tray for loading a food-carrying container into the seal-packaging machine configured to move stably forward/backward while engaging with a -shaped guide by a “”-shaped guide rail; a heater unit driving support shafts operating the heater unit upward/downward and a heater unit driving portion support plate connected thereto operating upward/downward by two roller bearings and two eccentric cams contacting the same; a motor fixedly provided on a bottom frame to drive upward/downward the heater unit driving support shafts and the heater unit driving portion support plate of a heater unit driving portion; and a heater unit evenly operating upward/downward while keeping in horizontal along the four heater unit driving support shafts provided on four sides. The seal-packaging machine prevents defects due to imbalance of the heater unit, thereby guaranteeing an accurate sealing operation with a film.

公开(公告)号：US09196630B2

公开(公告)日：2015-11-24

申请号：US14519821

申请日：2014-10-21

Applicant: Bo-Young Lee ,  Jongwan Choi ,  Myoungbum Lee

Inventor： Bo-Young Lee ,  Jongwan Choi ,  Myoungbum Lee

IPC: H01L29/792 ,  H01L27/115 ,  H01L21/764 ,  H01L21/762 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/11582 ,  H01L21/76229 ,  H01L21/764 ,  H01L23/528 ,  H01L23/5329 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices, and methods of fabricating the same, include forming a trench between a plurality of patterns on a substrate to be adjacent to each other, forming a first sacrificial layer in the trench, forming a first porous insulation layer having a plurality of pores on the plurality of patterns and on the first sacrificial layer, and removing the first sacrificial layer through the plurality of pores of the first porous insulation layer to form a first air gap between the plurality of patterns and under the first porous insulation layer.

Abstract translation: 半导体器件及其制造方法包括在彼此相邻的衬底上的多个图案之间形成沟槽，在沟槽中形成第一牺牲层，形成具有多个孔的第一多孔绝缘层 所述多个图案和所述第一牺牲层上，并且通过所述第一多孔绝缘层的所述多个孔去除所述第一牺牲层，以在所述多个图案之间和所述第一多孔绝缘层下方形成第一气隙。

公开(公告)号：USD707252S1

公开(公告)日：2014-06-17

申请号：US29421486

申请日：2012-07-31

Applicant: Chang-Mo Yang ,  Kyung-Dae Park ,  Hye-Bin Park ,  Bo-Young Lee

Designer： Chang-Mo Yang ,  Kyung-Dae Park ,  Hye-Bin Park ,  Bo-Young Lee

公开(公告)号：USD707236S1

公开(公告)日：2014-06-17

申请号：US29421459

申请日：2012-07-31

Applicant: Chang-Mo Yang ,  Kyung-Dae Park ,  Hye-Bin Park ,  Bo-Young Lee

Designer： Chang-Mo Yang ,  Kyung-Dae Park ,  Hye-Bin Park ,  Bo-Young Lee

公开(公告)号：US20120144342A1

公开(公告)日：2012-06-07

申请号：US13270337

申请日：2011-10-11

Applicant: Seock Hyun YU ,  Giang Yoon KWON ,  Chang Mo YANG ,  Jae Myung LEE ,  Yu Sic KIM ,  Bo Young LEE ,  Eun Ju LEE

Inventor： Seock Hyun YU ,  Giang Yoon KWON ,  Chang Mo YANG ,  Jae Myung LEE ,  Yu Sic KIM ,  Bo Young LEE ,  Eun Ju LEE

IPC: G06F3/048

CPC classification number: G06F3/0483 ,  G06F3/0482 ,  G06F3/0485 ,  G06F2203/04803

Abstract: A list display method and apparatus are disclosed. The list display method, for a terminal having a display unit, includes detecting a necessity for displaying a list, classifying list items into viewable items and aggregated items, displaying the viewable items in the list view region and displaying information regarding the aggregated items in the list aggregate region. Responsive to inputs aggregate items may be classified as viewable items and corresponding ones of the viewable items are classified as aggregate items.

Abstract translation: 公开了列表显示方法和装置。 列表显示方法，对于具有显示单元的终端，包括检测列表的显示必要性，将列表项分类为可查看项目和聚合项目，将可查看项目显示在列表视图区域中，并且显示有关聚合项目的信息 列表聚合区域。 响应输入的总项可以分类为可查看项目，相应的可查看项目被分类为总项目。

公开(公告)号：US20110306195A1

公开(公告)日：2011-12-15

申请号：US13099485

申请日：2011-05-03

Applicant: Jin-Gyun Kim ,  Bo-Young Lee ,  Ki-Hyun Hwang ,  Eunkee Hong ,  Jong-Wan Choi

Inventor： Jin-Gyun Kim ,  Bo-Young Lee ,  Ki-Hyun Hwang ,  Eunkee Hong ,  Jong-Wan Choi

IPC: H01L21/28

CPC classification number: H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

Abstract: In a vertical semiconductor device and a method of manufacturing a vertical semiconductor device, sacrificial layers and insulating interlayers are repeatedly and alternately stacked on a substrate. The sacrificial layers include boron (B) and nitrogen (N) and have an etching selectivity with respect to the insulating interlayers. Semiconductor patterns are formed on the substrate through the sacrificial layers and the insulating interlayers. The sacrificial layers and the insulating interlayers are at least partially removed between the semiconductor patterns to form sacrificial layer patterns and insulating interlayer patterns on sidewalls of the semiconductor patterns. The sacrificial layer patterns are removed to form grooves between the insulating interlayer patterns. The grooves expose portions of the sidewalls of the semiconductor patterns. A gate structure is formed in each of the grooves.

Abstract translation: 在垂直半导体器件和制造垂直半导体器件的方法中，牺牲层和绝缘夹层重叠交替堆叠在衬底上。 牺牲层包括硼（B）和氮（N），并且相对于绝缘夹层具有蚀刻选择性。 通过牺牲层和绝缘夹层在衬底上形成半导体图案。 在半导体图案之间至少部分去除牺牲层和绝缘夹层，以在半导体图案的侧壁上形成牺牲层图案和绝缘层间图案。 去除牺牲层图案以在绝缘层间图案之间形成凹槽。 凹槽暴露半导体图案的侧壁的部分。 在每个槽中形成栅极结构。