Device and grounding device for enhancing EMS and wireless communication device
    11.
    发明授权
    Device and grounding device for enhancing EMS and wireless communication device 有权
    用于增强EMS和无线通信设备的设备和接地设备

    公开(公告)号:US08786513B2

    公开(公告)日:2014-07-22

    申请号:US13566383

    申请日:2012-08-03

    IPC分类号: H01Q1/48

    摘要: A device for enhancing electromagnetic susceptibility comprises a first bridge. The first bridge is near to a first trace of a differential pair routing and electrically connects an RF grounding with an analog grounding. The RF grounding and the analog grounding are separated. The differential pair routing transmits signals between an RF circuit and an analog circuit. The first trace of the differential pair routing is closer to an antenna coupled to the RF grounding than a second trace of the differential pair routing. The RF circuit is coupled to the RF grounding, and the analog circuit is coupled to the analog grounding.

    摘要翻译: 用于增强电磁敏感性的装置包括第一桥。 第一座桥接近差分对路由的第一条路径,并将RF接地与模拟地线电连接。 RF接地和模拟接地分开。 差分对路由在RF电路和模拟电路之间传输信号。 差分对路由的第一个迹线比差分对路由的第二个跟踪更靠近耦合到RF接地的天线。 RF电路耦合到RF接地,模拟电路耦合到模拟接地。

    DEVICE AND GROUNDING DEVICE FOR ENHANCING EMS AND WIRELESS COMMUNICATION DEVICE
    12.
    发明申请
    DEVICE AND GROUNDING DEVICE FOR ENHANCING EMS AND WIRELESS COMMUNICATION DEVICE 有权
    用于增强EMS和无线通信设备的设备和接地设备

    公开(公告)号:US20130169487A1

    公开(公告)日:2013-07-04

    申请号:US13566383

    申请日:2012-08-03

    IPC分类号: H05K1/11 H01Q1/38

    摘要: A device for enhancing electromagnetic susceptibility comprises a first bridge. The first bridge is near to a first trace of a differential pair routing and electrically connects an RF grounding with an analog grounding. The RF grounding and the analog grounding are separated. The differential pair routing transmits signals between an RF circuit and an analog circuit. The first trace of the differential pair routing is closer to an antenna coupled to the RF grounding than a second trace of the differential pair routing. The RF circuit is coupled to the RF grounding, and the analog circuit is coupled to the analog grounding.

    摘要翻译: 用于增强电磁敏感性的装置包括第一桥。 第一座桥接近差分对路由的第一条路径,并将RF接地与模拟地线电连接。 RF接地和模拟接地分开。 差分对路由在RF电路和模拟电路之间传输信号。 差分对路由的第一个迹线比差分对路由的第二个跟踪更靠近耦合到RF接地的天线。 RF电路耦合到RF接地,并且模拟电路耦合到模拟接地。

    Differential signal output circuit for timing controller of display device
    14.
    发明授权
    Differential signal output circuit for timing controller of display device 有权
    差分信号输出电路,用于显示装置的定时控制器

    公开(公告)号:US07800413B2

    公开(公告)日:2010-09-21

    申请号:US11843643

    申请日:2007-08-22

    IPC分类号: H03B1/00

    摘要: A differential-signal output circuit for a timing controller of a display device includes a conversion circuit, a pre-charging circuit and a timing generator. The conversion circuit is used for receiving a differential signal and outputting a current to a load circuit according to polarity of the differential signal. The pre-charging circuit is coupled to a first output end and a second output end of the conversion circuit or is coupled to a first power driving end and a power second driving end of the conversion circuit. The pre-charging circuit is used for pre-charging the load according to a control signal. The timing generator is used for generating the differential signal and a control signal according to display data.

    摘要翻译: 用于显示装置的定时控制器的差分信号输出电路包括转换电路,预充电电路和定时发生器。 转换电路用于接收差分信号,并根据差分信号的极性将电流输出到负载电路。 预充电电路耦合到转换电路的第一输出端和第二输出端,或耦合到转换电路的第一电源驱动端和电源第二驱动端。 预充电电路用于根据控制信号对负载进行预充电。 定时发生器用于根据显示数据产生差分信号和控制信号。

    METHOD FOR FORMING EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET) BASED SENSOR AND THE SENSOR THEREFROM
    15.
    发明申请
    METHOD FOR FORMING EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET) BASED SENSOR AND THE SENSOR THEREFROM 失效
    形成扩展栅极场效应晶体管(EGFET)的传感器及其传感器的方法

    公开(公告)号:US20090278175A1

    公开(公告)日:2009-11-12

    申请号:US12343252

    申请日:2008-12-23

    IPC分类号: H01L29/78 H01L21/02

    CPC分类号: G01N27/414

    摘要: The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate; and (c) forming a conductive wire extended from the sensing film for external contact.

    摘要翻译: 本发明提供一种形成基于扩展栅极场效应晶体管(EGFET)的传感器的方法,包括:(a)提供衬底; (b)在基板上形成包括二氧化钛,掺钌的二氧化钛或氧化钌的感测膜; 和(c)形成从感测膜延伸出的用于外部接触的导线。

    RSDS/LVDS Driving Circuits Suitable for Low Working Voltages
    16.
    发明申请
    RSDS/LVDS Driving Circuits Suitable for Low Working Voltages 审中-公开
    适用于低工作电压的RSDS / LVDS驱动电路

    公开(公告)号:US20080054953A1

    公开(公告)日:2008-03-06

    申请号:US11746629

    申请日:2007-05-09

    IPC分类号: H03K3/023

    摘要: A driving circuit includes a first switchable current module for providing a first current, a second switchable current module for providing a second current, a first switchable current source having an input end coupled to a first output end of the second switchable current module, a second switchable current source having an input end coupled to a second output end of the second switchable current module, a third switchable current source having an input coupled to a first output end of the first switchable current module, a fourth switchable current source having an input end coupled to a second output end of the first switchable current module, and a termination impedance circuit. The termination impedance circuit has a first end coupled to the first switchable current source and the third switchable current source, and a second end coupled to the second switchable current source and the fourth switchable current source.

    摘要翻译: 驱动电路包括用于提供第一电流的第一可切换电流模块,用于提供第二电流的第二可切换电流模块,具有耦合到第二可切换电流模块的第一输出端的输入端的第一可切换电流源,第二可切换电流模块 可切换电流源,具有耦合到第二可切换电流模块的第二输出端的输入端;第三可切换电流源,具有耦合到第一可切换电流模块的第一输出端的输入端,第四可切换电流源,具有输入端 耦合到第一可切换电流模块的第二输出端和终端阻抗电路。 终端阻抗电路具有耦合到第一可切换电流源和第三可切换电流源的第一端,以及耦合到第二可切换电流源和第四可切换电流源的第二端。

    Reworking method for integrated circuit devices
    17.
    发明授权
    Reworking method for integrated circuit devices 有权
    集成电路器件的返工方法

    公开(公告)号:US08222143B2

    公开(公告)日:2012-07-17

    申请号:US11933203

    申请日:2007-10-31

    IPC分类号: H01L21/302 B44C1/22

    摘要: A reworking method for integrated circuit devices includes the following: providing a substrate having a first base layer and a first dielectric layer formed thereon, performing a first dry etching process to remove the first dielectric layer, performing a CMP process to remove the first base layer, and sequentially reforming a second base layer and a second dielectric layer on the substrate. When certain layers on the IC device have hailed an inspection or when quality defects are found, the defective layer is removed according to the provided reworking method.

    摘要翻译: 集成电路器件的再加工方法包括:提供具有形成在其上的第一基极层和第一电介质层的衬底,执行第一干蚀刻工艺以去除第一介电层,执行CMP工艺以去除第一基底层 并且在基板上依次重构第二基层和第二介电层。 当IC器件上的某些层已经检查到或者当发现质量缺陷时,根据所提供的返工方法去除缺陷层。

    Computer and built-in flash memory storage device thereof
    19.
    发明授权
    Computer and built-in flash memory storage device thereof 有权
    计算机及内置闪存存储装置

    公开(公告)号:US07899979B2

    公开(公告)日:2011-03-01

    申请号:US11969925

    申请日:2008-01-07

    申请人: Cheng-Wei Chen

    发明人: Cheng-Wei Chen

    IPC分类号: G06F12/00

    CPC分类号: G06F13/4027

    摘要: A computer comprises a mother board. A CPU, a chipset and a flash memory storage device are configured on the mother board. Wherein, the chipset is coupled to the CPU and coupled to the flash memory storage device through a USB bus, so that the CPU is able to access data stored on the flash memory storage device through the chipset.

    摘要翻译: 计算机包括母板。 母板上配置了CPU,芯片组和闪存存储设备。 其中,芯片组耦合到CPU并通过USB总线耦合到闪存存储设备,使得CPU能够通过芯片组访问存储在闪存存储设备上的数据。

    REWORKING METHOD FOR INTEGRATED CIRCUIT DEVICES
    20.
    发明申请
    REWORKING METHOD FOR INTEGRATED CIRCUIT DEVICES 有权
    集成电路设备的研制方法

    公开(公告)号:US20090111268A1

    公开(公告)日:2009-04-30

    申请号:US11933203

    申请日:2007-10-31

    IPC分类号: H01L21/306

    摘要: A reworking method for integrated circuit devices includes the following: providing a substrate having a first base layer and a first dielectric layer formed thereon, performing a first dry etching process to remove the first dielectric layer, performing a CMP process to remove the first base layer, and sequentially reforming a second base layer and a second dielectric layer on the substrate. When certain layers on the IC device have hailed an inspection or when quality defects are found, the defective layer is removed according to the provided reworking method.

    摘要翻译: 集成电路器件的再加工方法包括:提供具有形成在其上的第一基极层和第一电介质层的衬底,执行第一干蚀刻工艺以去除第一介电层,执行CMP工艺以去除第一基底层 并且在基板上依次重构第二基层和第二介电层。 当IC器件上的某些层已经检查到或者当发现质量缺陷时,根据所提供的返工方法去除缺陷层。