公开(公告)号：US20100133515A1

公开(公告)日：2010-06-03

申请号：US11700447

申请日：2007-01-30

Applicant: Xia Sheng ,  Zhang-Lin Zhou ,  Krzysztof Nauka ,  Chung Ching Yang

Inventor： Xia Sheng ,  Zhang-Lin Zhou ,  Krzysztof Nauka ,  Chung Ching Yang

IPC: H01L51/30 ,  B05D5/12 ,  B05D1/38 ,  B05D3/06 ,  B32B7/02 ,  B32B27/00 ,  B32B27/24

CPC classification number: H01L51/0043 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/56 ,  H01L2251/308 ,  Y02E10/549 ,  Y10T428/2495

Abstract: The present invention is drawn to a layered organic device, and a method of forming the same. The method includes steps of applying a first solvent-containing organic layer to a substrate and removing solvent from the first solvent-containing organic layer to form a first solidified organic layer. Additional steps include applying a second solvent-containing organic layer to the first solidified organic layer and removing solvent from the second solvent-containing organic layer to form a second solidified organic layer. The first solidified organic layer can be crosslinked, which suppresses negative impact to components in the first solidified organic layer when the solvent of the second solvent-containing organic layer is deposited on the first solidified organic layer.

Abstract translation: 本发明涉及层状有机器件及其形成方法。 该方法包括将第一含溶剂的有机层施加到基底上并从第一含溶剂的有机层除去溶剂以形成第一固化有机层的步骤。 附加步骤包括将第二含溶剂的有机层施加到第一固化有机层并从第二含溶剂的有机层除去溶剂以形成第二固化的有机层。 当第一固化有机层的溶剂沉积在第一固化有机层上时，第一固化有机层可以交联，这抑制了对第一固化有机层中的组分的负面影响。

公开(公告)号：US06980507B2

公开(公告)日：2005-12-27

申请号：US10231044

申请日：2002-08-30

Applicant: Gary A. Gibson ,  Krzysztof Nauka ,  Chung-Ching Yang

Inventor： Gary A. Gibson ,  Krzysztof Nauka ,  Chung-Ching Yang

IPC: G11B9/10 ,  G11B9/00 ,  G11B11/00

CPC classification number: B82Y10/00 ,  G11B9/10 ,  G11B9/14 ,  G11B9/149 ,  G11B11/00 ,  G11B2005/0021

Abstract: An ultra-high-density data storage device that relies on optical signals. The device includes a luminescent layer that emits light when stimulated by an electron beam. The device also includes a phase-change layer that contains data bits that may absorb or reflect the stimulated light before the light reaches a detector. Also, a method of data storage and retrieval that includes writing data bits in the phase-change layer, stimulating emissions in the luminescent layer, and reading data bits by monitoring the amount of light that reaches the detector.

Abstract translation: 一种依赖于光信号的超高密度数据存储设备。 该装置包括当被电子束刺激时发光的发光层。 该装置还包括相变层，其包含在光到达检测器之前可以吸收或反射受激光的数据位。 另外，一种数据存储和检索方法，包括在相变层中写入数据位，刺激发光层中的发射，以及通过监视到达检测器的光量来读取数据位。

公开(公告)号：US06590850B2

公开(公告)日：2003-07-08

申请号：US09800561

申请日：2001-03-07

Applicant: Kenneth J. Eldredge ,  Winston C. Mitchell ,  Steven L. Naberhuis ,  Chung Ching Yang

Inventor： Kenneth J. Eldredge ,  Winston C. Mitchell ,  Steven L. Naberhuis ,  Chung Ching Yang

IPC: G11B700

CPC classification number: B82Y10/00 ,  G11B9/10 ,  G11B9/1418 ,  G11B11/08 ,  G11B19/20 ,  G11B25/04

Abstract: An information storage unit functioning in a vacuum is provided wherein a data storage medium has an information storage area for storing and reading information thereon. An array of electron beam emitters is spaced from and in close proximity to the data storage medium for selectively directing a plurality of electron beams toward the data storage medium. Focusing optics between the array of electron beam emitters and the data storage medium focus each of the electron beams on one part of the information storage area of the data storage medium. A micro electromechanical motor associated with the data storage medium moves the data storage medium relative to the array of electron beam emitters, so that each of the emitters directs an electron beam selectively to a portion of the information storage area to read or write information therein. Electronic circuitry spaced from and in electronic communication with the array of electron beam emitters controls the operations of the array of electron beam emitters. A vacuum device in the information storage unit maintains the vacuum between the data storage medium and the array of electron beam emitters.

公开(公告)号：US06436794B1

公开(公告)日：2002-08-20

申请号：US09860453

申请日：2001-05-21

Applicant: Heon Lee ,  Chung-Ching Yang ,  Peter Hartwell

Inventor： Heon Lee ,  Chung-Ching Yang ,  Peter Hartwell

IPC: H01L2130

CPC classification number: G11B9/1436 ,  B81C1/00896 ,  B82Y10/00 ,  G01Q80/00 ,  G11B9/10 ,  G11B9/1463 ,  H01L21/68 ,  H01L25/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved process flow for an atomic resolution storage (ARS) system deposits conductive electrodes on a media side of a rotor wafer before wafer thinning process, i.e., grinding and CMP, thus protecting the conductive electrodes on a media surface from the grinding process. In addition, the CMOS circuitry is formed in a stator wafer at a relatively later stage. Therefore, the CMOS circuitry is less likely to be damaged by heat processing. In addition, some of the necessary processing may be performed with loosened thermal budget. Finally, because wafer bonding of the rotor wafer and the stator wafer is performed at a later stage, there is less probability of degradation of the wafer bonding. Accordingly, device yield may be enhanced, leading to lower manufacturing cost.

Abstract translation: 用于原子分辨率存储（ARS）系统的改进的工艺流程在晶片变薄处理（即研磨和CMP）之前在转子晶片的介质侧上沉积导电电极，从而保护介质表面上的导电电极免受研磨过程。 此外，CMOS电路在相对较晚的阶段形成在定子晶片中。 因此，CMOS电路不太可能被热处理所损坏。 另外，一些必要的处理可以用松散的热预算执行。 最后，由于转子晶片和定子晶片的晶片接合在稍后的阶段进行，所以晶片接合的劣化的可能性降低。 因此，可以提高装置产量，从而降低制造成本。

公开(公告)号：US08785004B2

公开(公告)日：2014-07-22

申请号：US13146398

申请日：2009-01-30

Applicant: Zhang-Lin Zhou ,  Chung Ching Yang ,  Lihua Zhao

Inventor： Zhang-Lin Zhou ,  Chung Ching Yang ,  Lihua Zhao

IPC: H01L51/54 ,  C09K11/06 ,  C08G73/00 ,  C08G63/66 ,  C08G73/06 ,  C08G79/00 ,  C08G77/60 ,  C08G69/40 ,  C08G75/12 ,  C08G61/12 ,  H01L51/00 ,  C08G61/02

CPC classification number: H01L51/0043 ,  C08G61/02 ,  C08G61/12 ,  C08G2261/314 ,  C08G2261/3142 ,  C08G2261/316 ,  C08G2261/3162 ,  C08G2261/5222 ,  C09B69/008 ,  C09B69/109 ,  H01L51/0039 ,  Y10S428/917

Abstract: A fluorene-based copolymer of formula I includes a monomeric unit that includes a fluorene group and at least one steric hindering chemical group to provide sufficient steric interaction such that the spatial conformation of the fluorene-based copolymer is substantially non-planar. The fluorene-based copolymer exhibits UV light emission.

Abstract translation: 式I的基于芴的共聚物包括包含芴基和至少一个空间位阻化学基团的单体单元以提供足够的空间相互作用，使得基于芴的共聚物的空间构象基本上是非平面的。 芴基共聚物表现出紫外光发射。

公开(公告)号：US07496216B2

公开(公告)日：2009-02-24

申请号：US11157649

申请日：2005-06-21

Applicant: Sui-hing Leung ,  Sean Xiao-An Zhang ,  Chung Ching Yang

Inventor： Sui-hing Leung ,  Sean Xiao-An Zhang ,  Chung Ching Yang

IPC: G06K9/00

CPC classification number: G06K9/0002

Abstract: A system and method of capturing a skin print from skin having ridges and valleys. A skin print sensor having a return/supply contact and a plurality of contact pads is provided. A finger is applied to the skin print sensor and data is stored representative of contact pads in contact with skin ridges.

Abstract translation: 从具有脊和谷的皮肤捕获皮肤印迹的系统和方法。 提供具有返回/供给触点和多个接触垫的皮肤印刷传感器。 将手指施加到皮肤印刷传感器，并且存储代表与皮肤脊接触的接触垫的数据。

公开(公告)号：US06440820B1

公开(公告)日：2002-08-27

申请号：US09860452

申请日：2001-05-21

Applicant: Heon Lee ,  Chung-Ching Yang ,  Peter Hartwell

Inventor： Heon Lee ,  Chung-Ching Yang ,  Peter Hartwell

IPC: H01L2130

CPC classification number: G11B9/1418 ,  B82Y10/00 ,  G01Q80/00 ,  G11B9/1463

Abstract: An improved process flow for an atomic resolution storage (ARS) system deposits conductive electrodes, together with a protective layer, on a media side of a rotor wafer before most of other device processing, thus preserving a surface for ARS storage media from subsequent wafer thinning process. CMOS circuitry is also formed in a stator wafer at a later stage. Therefore, the CMOS circuitry is less likely to be damaged by heat processing. In addition, processing of the media side of the rotor wafer may be performed with loosened thermal budget. Finally, because the media side of the rotor wafer is processed before wafer bonding of the rotor wafer and the stator wafer, there is less probability of degradation of the wafer bonding. Therefore, device yield may be enhanced, leading to lower manufacturing cost.

Abstract translation: 原子分辨率存储（ARS）系统的改进的处理流程在其他器件处理之前大部分其它器件处理之前，将转移晶片的介质侧上的导电电极与保护层一起放置在一起，从而保留了ARS存储介质从后续晶片变薄的表面 处理。 在稍后阶段也在定子晶片中形成CMOS电路。 因此，CMOS电路不太可能被热处理所损坏。 此外，可以以松散的热量预算来执行转子晶片的介质侧的处理。 最后，因为转子晶片的介质侧在转子晶片和定子晶片的晶片接合之前被处理，所以晶片键合的劣化的可能性降低。 因此，可以提高装置产量，导致制造成本降低。