公开(公告)号：US20130011580A1

公开(公告)日：2013-01-10

申请号：US13618949

申请日：2012-09-14

Applicant: Christian DUSSARRAT ,  Clement LANSALOT-MATRAS

Inventor： Christian DUSSARRAT ,  Clement LANSALOT-MATRAS

IPC: C23C16/18 ,  C23C16/50 ,  C23C16/56

CPC classification number: C23C16/18 ,  C23C16/45553

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract translation: 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积到基底上以形成含金属的膜。

公开(公告)号：US08298616B2

公开(公告)日：2012-10-30

申请号：US12509024

申请日：2009-07-24

Applicant: Christian Dussarrat ,  Clement Lansalot-Matras

Inventor： Christian Dussarrat ,  Clement Lansalot-Matras

IPC: B05D3/02

CPC classification number: C23C16/18 ,  C23C16/45553

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract translation: 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积到基底上以形成含金属的膜。

公开(公告)号：US20100193951A1

公开(公告)日：2010-08-05

申请号：US12693930

申请日：2010-01-26

Applicant: Christian Dussarrat ,  Clement LANSALOT-MATRAS ,  Vincent M. Omarjee ,  Cheng-Fang Hsiao

Inventor： Christian Dussarrat ,  Clement LANSALOT-MATRAS ,  Vincent M. Omarjee ,  Cheng-Fang Hsiao

IPC: H01L21/3205 ,  H01L23/48

CPC classification number: H01L21/28562 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/76871

Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

Abstract translation: 在基材上形成含金属薄膜的组合物和方法。 提供反应器和反应器中的至少一个基板。 将含金属的双 - 二氮嗪酮前体引入反应器。 将反应器保持在设定的温度和压力下，并将前体与基底接触以在基底上形成含金属的膜。

公开(公告)号：US20100022790A1

公开(公告)日：2010-01-28

申请号：US12509052

申请日：2009-07-24

Applicant: Christian Dussarrat ,  Clement Lansalot-Matras

Inventor： Christian Dussarrat ,  Clement Lansalot-Matras

IPC: C07F15/04

CPC classification number: C23C16/18 ,  C23C16/45553

Abstract: Methods for forming heteroleptic amidinate or guanidinate cyclopentadienyl containing transition metal precursors through synthesis reactions.

Abstract translation: 通过合成反应形成含有杂芳基脒基或胍基环戊二烯基的过渡金属前体的方法。

公开(公告)号：US08906457B2

公开(公告)日：2014-12-09

申请号：US13549910

申请日：2012-07-16

Applicant: David Thompson ,  Jeffrey W. Anthis ,  Christian Dussarrat ,  Clement Lansalot-Matras

Inventor： David Thompson ,  Jeffrey W. Anthis ,  Christian Dussarrat ,  Clement Lansalot-Matras

IPC: C23C16/18 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/45553

Abstract: Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups.

Abstract translation: 提供了使用金属配位络合物在表面上沉积基本由Co，Mn，Ru或镧系金属构成的金属膜的方法。 在该方法中使用的前体包括2-甲基亚胺吡咯基配体和/或N，N'-二异丙基甲酰胺配体。 前体还可以含有环戊二烯基，五甲基环戊二烯基或吡咯基。

公开(公告)号：US20140179105A1

公开(公告)日：2014-06-26

申请号：US14159815

申请日：2012-06-29

Applicant: Clement Lansalot-matras ,  Andrey V. Korolev

Inventor： Clement Lansalot-matras ,  Andrey V. Korolev

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28506 ,  C07F15/04 ,  H01L21/76838

Abstract: Disclosed are metal-containing precursors having the formula Compound (I) wherein: —M is a metal selected from Ni, Co, Mn, Pd; and —each of R-1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from H; a C1-C4 linear, branched, or cyclic alkyl group; a C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C1-C4 linear, branched, or cyclic alkylamino group; or a C1-C4 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing and using the disclosed metal-containing precursors to deposit metal-containing films on a substrate via a vapor deposition process.

Abstract translation: 公开了具有式化合物（I）的含金属的前体，其中：-M是选自Ni，Co，Mn，Pd的金属; R 1，R 2，R 3，R 4，R 5，R 6，R 7，R 8，R 9和R 10各自独立地选自H; C1-C4直链，支链或环状烷基; C1-C4直链，支链或环状烷基甲硅烷基（单，双或三烷基）; C1-C4直链，支链或环状烷基氨基; 或C 1 -C 4直链，支链或环状氟代烷基。 还公开了合成和使用所公开的含金属前体的方法，其通过气相沉积工艺将含金属的膜沉积在基底上。

公开(公告)号：US20130089679A1

公开(公告)日：2013-04-11

申请号：US13269140

申请日：2011-10-07

Applicant: Christian Dussarrat ,  Vincent M. Omarjee ,  Clement Lansalot-Matras

Inventor： Christian Dussarrat ,  Vincent M. Omarjee ,  Clement Lansalot-Matras

IPC: C23C16/06

CPC classification number: C23C16/06 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50

Abstract: The disclosure relates to a process for depositing a Manganese-containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C.

Abstract translation: 本公开涉及一种用于沉积含锰的膜的方法，包括以下步骤：提供适于在等于或低于500摄氏度的温度下等离子体沉积的金属胍和/或金属脒前体，等离子体沉积方法包括 沉积温度等于或低于500摄氏度

公开(公告)号：US20100003532A1

公开(公告)日：2010-01-07

申请号：US12480472

申请日：2009-06-08

Applicant: Benjamin J. FEIST ,  Christian Dussarrat ,  Vincent M. Omarjee ,  Clement Lansalot-Matras

Inventor： Benjamin J. FEIST ,  Christian Dussarrat ,  Vincent M. Omarjee ,  Clement Lansalot-Matras

IPC: C23C16/18 ,  B32B15/04 ,  C07F7/28 ,  C07F7/00

CPC classification number: C07C251/12 ,  C23C16/18 ,  Y10T428/31678

Abstract: Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A metal containing precursor with at least one β-diketiminate ligand is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Metal is deposited onto the substrate through a deposition process to form a thin film on the substrate.

Abstract translation: 公开了在基底上沉积含金属膜的方法和组合物。 提供反应器和设置在反应器中的至少一个基板。 提供含有至少一种β-二酮酸酯配体的含金属的前体，并将其引入反应器中，该反应器保持在至少100℃的温度。金属通过沉积工艺沉积到基底上，以形成薄膜 基质。

公开(公告)号：US10106887B2

公开(公告)日：2018-10-23

申请号：US15035592

申请日：2013-11-13

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  Clement Lansalot-Matras ,  Wontae Noh ,  Jooho Lee

Inventor： Clément Lansalot-Matras ,  Wontae Noh ,  Jooho Lee

IPC: C23C16/18 ,  C23C16/455 ,  C01G33/00 ,  C07F9/00 ,  C09D5/24 ,  H01L21/02 ,  H01L21/285 ,  C23C16/452

Abstract: Disclosed are Group 5 transition metal-containing thin film forming precursors. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 5 transition metal-containing thin films on one or more substrates via vapor deposition processes.

公开(公告)号：US20130089680A1

公开(公告)日：2013-04-11

申请号：US13269151

申请日：2011-10-07

Applicant: Christian DUSSARRAT ,  Vincent M. OMARJEE ,  Clement LANSALOT-MATRAS

Inventor： Christian DUSSARRAT ,  Vincent M. OMARJEE ,  Clement LANSALOT-MATRAS

IPC: C23C16/18 ,  C23C16/50

CPC classification number: C23C16/18 ,  C23C16/06 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50

Abstract: The present invention relates to a process for the use of Ruthenium amidinate metal precursors for the deposition of Ruthenium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

Abstract translation: 本发明涉及使用钌钌金属前体用于通过等离子体增强原子层沉积（PEALD）或等离子体增强化学气相沉积（PECVD）沉积含钌膜的方法。