公开(公告)号：US08451362B2

公开(公告)日：2013-05-28

申请号：US12461608

申请日：2009-08-18

Applicant: Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

Inventor： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

IPC: H04N3/14 ,  H04N5/335 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14641

Abstract: An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

Abstract translation: 图像传感器包括在半导体衬底中的导电阱，在导电阱下方的半导体衬底中的光敏器件（PSD），PSD和导电阱彼此重叠的光敏器件（PSD）以及半导体衬底中的电荷传输单元 所述电荷传输单元具有凹入栅极的结构并且位于所述半导体衬底的凹部区域中。

公开(公告)号：US20110176045A1

公开(公告)日：2011-07-21

申请号：US13011531

申请日：2011-01-21

Applicant: Jung Chak AHN ,  Kyung Ho LEE ,  Young Hwan PARK ,  Young Chan KIM ,  Dong-Yoon JANG ,  Shy HAMAMI ,  Uzi HIZI ,  Yuri FRIEDMAN

Inventor： Jung Chak AHN ,  Kyung Ho LEE ,  Young Hwan PARK ,  Young Chan KIM ,  Dong-Yoon JANG ,  Shy HAMAMI ,  Uzi HIZI ,  Yuri FRIEDMAN

IPC: H04N5/335

CPC classification number: H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3742 ,  H04N5/37457 ,  H04N9/045

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor and a pixel data readout method of the same are provided. The CMOS image sensor includes: a first readout line which outputs pixel data from a shared pixel group in an odd row of a column of a pixel array in a Bayer pattern during a horizontal period; and a second readout line which outputs pixel data from a shared pixel group in an even row of the column of the pixel array during the horizontal period, wherein pixel data output to the first and second readout lines during the horizontal period correspond to a basic Bayer pattern and pixels from which pixel data are read out in each column sequentially shifts in a column direction at each horizontal period.

Abstract translation: 提供互补金属氧化物半导体（CMOS）图像传感器及其像素数据读出方法。 CMOS图像传感器包括：第一读出线，其在水平周期期间以拜耳图案的像素阵列的列的奇数行中的共享像素组输出像素数据; 以及第二读出线，其在水平周期期间从像素阵列的列的偶数行中的共享像素组输出像素数据，其中在水平周期期间输出到第一和第二读出线的像素数据对应于基本拜耳 在各列读出像素数据的图案和像素在每个水平周期顺序地沿列方向移位。

公开(公告)号：US20110018042A1

公开(公告)日：2011-01-27

申请号：US12820787

申请日：2010-06-22

Applicant: Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

Inventor： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

IPC: H01L27/146 ,  H01L31/0232

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

Abstract: A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

Abstract translation: CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。 光电二极管具有基于半导体衬底中的光的入射角的斜率形状。

公开(公告)号：US20100133638A1

公开(公告)日：2010-06-03

申请号：US12591724

申请日：2009-11-30

Applicant: Jong Eun Park ,  Jung Chak Ahn ,  Yong Jei Lee ,  Dong-Yoon Jang

Inventor： Jong Eun Park ,  Jung Chak Ahn ,  Yong Jei Lee ,  Dong-Yoon Jang

IPC: H01L31/0224 ,  H01L21/768

CPC classification number: H01L27/1463 ,  H01L27/14629 ,  H01L27/1464

Abstract: An image sensor includes a plurality of photodiodes, a plurality of wells isolating the plurality of photodiodes from each other, and a plurality of conductive layers or conductive lines for suppressing a dark current generated at the surface of the photodiodes and in the wells in response to a bias voltage.

Abstract translation: 图像传感器包括多个光电二极管，将多个光电二极管彼此隔离的多个阱，以及用于抑制在光电二极管的表面和井中产生的暗电流的多个导电层或导线，以响应于 偏置电压。

公开(公告)号：US20090294816A1

公开(公告)日：2009-12-03

申请号：US12453532

申请日：2009-05-14

Applicant: Jong-Eun Park ,  Jung-Chak Ahn ,  Yong-Jei Lee ,  Dong-Yoon Jang

Inventor： Jong-Eun Park ,  Jung-Chak Ahn ,  Yong-Jei Lee ,  Dong-Yoon Jang

IPC: H01L31/112

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14641

Abstract: Provided are a CMOS image sensor and a driving method thereof. The CMOS image sensor may include a photodetector disposed in a semiconductor substrate to accumulate photocharges, a charge transfer element configured to control transfer of the photocharges accumulated in the photodetector, a detecting element configured to detect the photocharges transferred by the charge transfer element, and a well driving contact configured to increase a potential difference between the photodetector and the detecting element while the photocharges are transferred.

Abstract translation: 提供一种CMOS图像传感器及其驱动方法。 CMOS图像传感器可以包括设置在半导体衬底中以累积光电荷的光电检测器，被配置为控制在光电检测器中累积的光电荷的转移的电荷转移元件，被配置为检测由电荷转移元件传送的光电荷的检测元件，以及 良好的驱动接点被配置为在光电荷转移时增加光电检测器和检测元件之间的电位差。

公开(公告)号：US08614470B2

公开(公告)日：2013-12-24

申请号：US13541343

申请日：2012-07-03

Applicant: Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

Inventor： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

Abstract: A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

Abstract translation: CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。 光电二极管具有基于半导体衬底中的光的入射角的倾斜形状。

公开(公告)号：US08309995B2

公开(公告)日：2012-11-13

申请号：US12820787

申请日：2010-06-22

Applicant: Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

Inventor： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

Abstract: A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

Abstract translation: CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。 光电二极管具有基于半导体衬底中的光的入射角的斜率形状。

公开(公告)号：US20110298949A1

公开(公告)日：2011-12-08

申请号：US13151794

申请日：2011-06-02

Applicant: Kyung-ho Lee ,  Jung-chak Ahn ,  Sang-joo Lee ,  Young-hwan Park ,  Dong-yoon Jang ,  Young-heub Jang

Inventor： Kyung-ho Lee ,  Jung-chak Ahn ,  Sang-joo Lee ,  Young-hwan Park ,  Dong-yoon Jang ,  Young-heub Jang

IPC: H04N9/68 ,  H04N5/76

CPC classification number: H04N5/361 ,  H04N5/359 ,  H04N5/3594

Abstract: A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage.

Abstract translation: 背面照明方式的漏光补偿单元图像传感器包括：光电二极管和存储二极管，其中仅通过形成光电二极管的电极的区域仅接收单元图像传感器背面的光，以及区域 用于形成光电二极管的另一个电极和用于形成存储二极管的两个电极的区域由阱彼此分离，从而补偿光泄漏。

公开(公告)号：US20110037883A1

公开(公告)日：2011-02-17

申请号：US12801740

申请日：2010-06-23

Applicant: Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

Inventor： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

IPC: H04N9/04

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

Abstract: Image sensors including a semiconductor substrate, a plurality of photo detecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and may convert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively.

Abstract translation: 图像传感器包括半导体衬底，多个光电检测元件，电介质层，多个滤色器和多个微透镜。 光检测元件可以在半导体衬底中，并且可以将入射光转换成电信号。 电介质层可以在半导体衬底上并且可以包括在光检测元件之间的区域上的多个光阻挡区域。 滤色器可以在电介质层上，并且可以分别对应于多个光检测元件设置。 微透镜可以在多个滤色器上，并且可以分别对应于多个光检测元件设置。

公开(公告)号：US20100140733A1

公开(公告)日：2010-06-10

申请号：US12591912

申请日：2009-12-04

Applicant: Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

Inventor： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

IPC: H01L31/02

CPC classification number: H04N5/361 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

Abstract: In an example embodiment, the backside-illuminated image sensor includes a substrate including a plurality of photoelectric conversion devices being separated by a semiconductor. The backside-illuminated sensor further includes a transparent electrode layer or a metal layer formed on a surface of a substrate. As a positive bias voltage or a negative bias voltage is applied to the transparent electrode layer or the metal layer, generation of dark current in the surface of the silicon substrate may be reduced or suppressed.

Abstract translation: 在示例性实施例中，背面照明图像传感器包括由半导体分隔开的多个光电转换装置的基板。 背侧照明传感器还包括形成在基板的表面上的透明电极层或金属层。 由于向透明电极层或金属层施加正偏置电压或负偏置电压，因此可以减少或抑制硅衬底的表面中的暗电流的产生。