公开(公告)号：US20120273855A1

公开(公告)日：2012-11-01

申请号：US13541343

申请日：2012-07-03

Applicant: Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

Inventor： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

IPC: H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

Abstract: A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

Abstract translation: CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。 光电二极管具有基于半导体衬底中的光的入射角的斜率形状。

公开(公告)号：US20080182354A1

公开(公告)日：2008-07-31

申请号：US11950249

申请日：2007-12-04

Applicant: Jong-Jin Lee ,  Ju-Hyun Ko ,  Jong-Eun Park ,  Hyun-Suk Kim ,  Dong-Yoon Jang

Inventor： Jong-Jin Lee ,  Ju-Hyun Ko ,  Jong-Eun Park ,  Hyun-Suk Kim ,  Dong-Yoon Jang

IPC: H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14681 ,  H01L27/14689

Abstract: CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.

Abstract translation: 公开了CMOS图像传感器和制造CMOS图像传感器的相关方法。 CMOS图像传感器的制造可以包括在半导体衬底中形成具有第一导电类型的第一杂质区域。 在与第一杂质区相邻的半导体衬底中形成具有第二导电类型的第二杂质区。 具有第一导电类型的第三杂质区形成在半导体衬底中并位于第二杂质区的下方。 传输栅极形成在半导体衬底上并且至少部分地与第一，第二和第三杂质区重叠。 光敏元件形成在半导体衬底中并与传输门的一侧相邻。 浮动扩散区域形成在半导体衬底中并且位于与传感栅极的与光敏器件相反的一侧。

公开(公告)号：US08537255B2

公开(公告)日：2013-09-17

申请号：US12801740

申请日：2010-06-23

Applicant: Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

Inventor： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

IPC: H04N3/14 ,  H04N9/083 ,  H04N5/335 ,  H04N9/04

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

Abstract: Image sensors including a semiconductor substrate, a plurality of photo detecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and may convert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively.

Abstract translation: 图像传感器包括半导体衬底，多个光电检测元件，电介质层，多个滤色器和多个微透镜。 光检测元件可以在半导体衬底中，并且可以将入射光转换成电信号。 电介质层可以在半导体衬底上并且可以包括在光检测元件之间的区域上的多个光阻挡区域。 滤色器可以在电介质层上，并且可以分别对应于多个光检测元件设置。 微透镜可以在多个滤色器上，并且可以分别对应于多个光检测元件设置。

公开(公告)号：US20100134668A1

公开(公告)日：2010-06-03

申请号：US12591721

申请日：2009-11-30

Applicant: Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

Inventor： Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

IPC: H04N5/335 ,  H01L31/0352

CPC classification number: H01L27/1463 ,  H01L27/14629 ,  H01L27/1464

Abstract: An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.

Abstract translation: 图像传感器包括用于将多个光电二极管彼此隔离的多个阱。 每个阱包括配置成接收正偏置电压的P型阱区和N型阱区。 图像传感器通过抑制起霜效果和暗电流来提供更清晰的图像。

公开(公告)号：US20100045836A1

公开(公告)日：2010-02-25

申请号：US12461608

申请日：2009-08-18

Applicant: Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

Inventor： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

IPC: H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14641

Abstract: An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

Abstract translation: 图像传感器包括在半导体衬底中的导电阱，在导电阱下方的半导体衬底中的光敏器件（PSD），PSD和导电阱彼此重叠的光敏器件（PSD）以及半导体衬底中的电荷传输单元 所述电荷传输单元具有凹入栅极的结构并且位于所述半导体衬底的凹部区域中。

公开(公告)号：US20060289911A1

公开(公告)日：2006-12-28

申请号：US11472389

申请日：2006-06-22

Applicant: Sang-Jun Lee ,  Yang-Kyu Choi ,  Dong-Yoon Jang

Inventor： Sang-Jun Lee ,  Yang-Kyu Choi ,  Dong-Yoon Jang

IPC: H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

Abstract: Disclosed is a CMOS image sensor, comprising a photodiode formed in a substrate, a floating diffusion region formed in the substrate in a manner such that it is distanced from the photodiode surrounds the photodiode and a transfer gate formed in a manner such that it is distanced from the photodiode and the floating diffusion region and formed in a boundary area between the photodiode and the floating diffusion region, thereby overlapping the photodiode and the floating diffusion region.

Abstract translation: 公开了一种CMOS图像传感器，其包括形成在衬底中的光电二极管，以与光电二极管相隔的方式形成在衬底中的浮动扩散区域包围光电二极管，并且以使其远离的方式形成传输门 从光电二极管和浮动扩散区域形成在光电二极管和浮动扩散区域之间的边界区域中，从而与光电二极管和浮动扩散区域重叠。

公开(公告)号：US08487351B2

公开(公告)日：2013-07-16

申请号：US12591632

申请日：2009-11-25

Applicant: Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

Inventor： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

IPC: H01L27/148

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

Abstract translation: 提供了图像传感器和包括其的图像感测系统。 图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。 图像传感器包括至少一个阻热器或隔热罩。 可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。 热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。 使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

公开(公告)号：US20100133635A1

公开(公告)日：2010-06-03

申请号：US12591632

申请日：2009-11-25

Applicant: Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

Inventor： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

IPC: H01L31/024 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

Abstract translation: 提供了图像传感器和包括其的图像感测系统。 图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。 图像传感器包括至少一个阻热器或隔热罩。 可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。 热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。 使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

公开(公告)号：US20060208342A1

公开(公告)日：2006-09-21

申请号：US11345052

申请日：2006-02-01

Applicant: Yang-Kyu Choi ,  Dong-Yoon Jang

Inventor： Yang-Kyu Choi ,  Dong-Yoon Jang

IPC: H01L29/06

CPC classification number: H01L21/26506 ,  H01L21/263 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1037 ,  H01L29/66545 ,  H01L29/78654 ,  H01L29/78696

Abstract: The present invention relates to a SON MOSFET and method of manufacturing the same, in which a blister is formed within a silicon substrate, thus improving the disadvantages of a bulk structure and a Silicon-On-Insulator (SOI) structure at the same time. The SON MOSFET according to the present invention comprises isolation insulating films formed at both upper sides of a silicon substrate, a gate insulating film and a gate electrode that are sequentially formed on a surface of the silicon substrate between the isolation insulating films, a source region and a drain region that are formed on the silicon substrate between the gate insulating film and the isolation insulating films, a blister formed within the silicon substrate under the gate insulating film, and a silicon channel, which is surrounded by the blister, the source region and the drain region, within the silicon substrate, wherein the blister is formed of hydrogen or helium ion.

Abstract translation: 本发明涉及一种SON MOSFET及其制造方法，其中在硅衬底内形成起泡，从而同时改善了本体结构和绝缘体上硅（SOI）结构的缺点。 根据本发明的SON MOSFET包括在硅衬底的两个上表面上形成的隔离绝缘膜，栅极绝缘膜和栅极电极，其顺序形成在隔离绝缘膜之间的硅衬底的表面上，源极区域 以及在栅极绝缘膜和隔离绝缘膜之间的硅衬底上形成的漏极区域，形成在栅极绝缘膜下方的硅衬底内的泡罩和被泡罩包围的硅沟道，源极区域 和硅衬底内的漏极区域，其中泡罩由氢或氦离子形成。

公开(公告)号：US08885065B2

公开(公告)日：2014-11-11

申请号：US13151794

申请日：2011-06-02

Applicant: Kyung-ho Lee ,  Jung-chak Ahn ,  Sang-joo Lee ,  Young-hwan Park ,  Dong-yoon Jang ,  Young-heub Jang

Inventor： Kyung-ho Lee ,  Jung-chak Ahn ,  Sang-joo Lee ,  Young-hwan Park ,  Dong-yoon Jang ,  Young-heub Jang

IPC: H04N5/76 ,  H04N5/361 ,  H04N5/359

CPC classification number: H04N5/361 ,  H04N5/359 ,  H04N5/3594

Abstract: A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage.

Abstract translation: 背面照明方式的漏光补偿单元图像传感器包括：光电二极管和存储二极管，其中仅通过形成光电二极管的电极的区域仅接收单元图像传感器背面的光，以及区域 用于形成光电二极管的另一个电极和用于形成存储二极管的两个电极的区域由阱彼此分离，从而补偿光泄漏。