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    Semiconductor Device with Corner Reflector
    11.
    发明申请
    Semiconductor Device with Corner Reflector 有权
    具有角反射器的半导体器件

    公开(公告)号：US20090080481A1

    公开(公告)日：2009-03-26

    申请号：US12208814

    申请日：2008-09-11

    Applicant: Hans LINDBERG ,  Stefan Illek

    Inventor： Hans LINDBERG ,  Stefan Illek

    IPC: H01S5/00 ,  H01S3/0941

    CPC classification number: H01S5/026 ,  H01S5/041 ,  H01S5/1071 ,  H01S5/1085 ,  H01S5/183 ,  H01S5/4025 ,  H01S5/4056

    Abstract: A semiconductor laser device (5) comprising at least one semiconductor laser chip (7) is provided, wherein the semiconductor laser chip (7) contains an active layer that emits electromagnetic radiation. Further, at least one corner reflector (1) is formed in the semiconductor laser chip (7). The corner reflector (1) has a first and a second reflective surface (14, 15), wherein the first and the second reflective surface (14, 15) are arranged at an angle of less than 90 degrees with respect to one another. This results in an improved emission characteristic of the radiation emitted by the semiconductor laser device (5).

    Abstract translation: 提供了包括至少一个半导体激光器芯片（7）的半导体激光器件（5），其中半导体激光器芯片（7）包含发射电磁辐射的有源层。 此外，在半导体激光芯片（7）中形成至少一个角部反射器（1）。 角部反射器（1）具有第一和第二反射表面（14,15），其中第一和第二反射表面（14,15）相对于彼此以小于90度的角度布置。 这导致半导体激光装置（5）发射的辐射的发射特性得到改善。

    Process for the preparation of cooking liquors having high sulphidity for sulphate pulp cooking
    12.
    发明授权
    Process for the preparation of cooking liquors having high sulphidity for sulphate pulp cooking 失效
    用于制备硫酸盐纸浆烹饪高硫化物的烹饪液的方法

    公开(公告)号：US5405496A

    公开(公告)日：1995-04-11

    申请号：US176694

    申请日：1994-01-03

    Applicant: Mats-Olov Hedblom ,  Hans Lindberg

    Inventor： Mats-Olov Hedblom ,  Hans Lindberg

    IPC: D21C11/04 ,  D21H17/00 ,  D21C11/12

    CPC classification number: D21C11/04 ,  D21H17/00 ,  Y10S423/03

    Abstract: The invention relates to a process for preparation, under reducing conditions, of cooking liquors having high sulphidity for sulphate pulp cooking, wherein the black liquor obtained in the cooking process is fed, after evaporation, completely or partly to a reactor operating at increased temperature which is obtained by energy supply from an external heat source and/or release of energy from the black liquor, a melt essentially consisting of sodium sulphide being formed and withdrawn to be further processed to cooking liquor. The process of the invention is characterized in that in addition there are fed to the reactor the whole or part of sulphur-containing and/or sulphur- and sodium-containing materials present in the pulp mill, including sulphur-containing and/or sodium- and sulphur-containing make-up chemicals used for the total chemicals balance of the pulp mill, in such a way that the mole ratio of sodium to sulphur in the total mixture fed to the reactor is within the range of 1.5 to 4. According to a preferred embodiment of the invention there is used an aqueous solution of the sodium sulphide melt obtained in so-called modified sulphate cooking.

    Abstract translation: 本发明涉及在还原条件下制备用于硫酸盐纸浆蒸煮的具有高硫化物的蒸煮液的方法，其中在蒸发过程中获得的黑液在蒸发后被全部或部分地进料到在升高的温度下操作的反应器 通过从外部热源的能量供应和/或从黑液中释放能量获得，基本上由硫化钠组成的熔体被形成和抽出以进一步加工成蒸煮液。 本发明的方法的特征在于，还向反应器中供应存在于纸浆厂中的含硫和/或含硫和含钠材料的全部或部分，包括含硫和/ 和用于纸浆厂的总化学品平衡的含硫化妆品化学品，使得进料到反应器的总混合物中的钠与硫的摩尔比在1.5至4的范围内。根据 使用所谓的改性硫酸盐蒸煮中获得的硫化钠熔体的水溶液，本发明的优选实施方案。

    Edge-Emitting Semiconductor Laser
    14.
    发明申请
    Edge-Emitting Semiconductor Laser 有权
    边缘发射半导体激光器

    公开(公告)号：US20140133505A1

    公开(公告)日：2014-05-15

    申请号：US14118819

    申请日：2012-06-08

    Applicant: Hans Lindberg

    Inventor： Hans Lindberg

    IPC: H01S5/10

    CPC classification number: H01S5/1003 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1032 ,  H01S5/1203 ,  H01S5/1228 ,  H01S5/1246 ,  H01S5/4031 ,  H01S5/4087

    Abstract: An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.

    Abstract translation: 边缘发射半导体激光器包括嵌入有产生激光辐射的有源层的第一波导层。 该激光器还包括其中没有嵌入有源层的第二波导层。 在有源层中产生的激光辐射形成驻波，其在第一波导层中具有相应的强度最大值，并且在第二波导层中具有相应的强度最小值，并且在第一波导层中具有相应的强度最小值，并且在第二波导层中具有相应的强度最大值 在半导体激光器的光束方向上的周期性间隔。 在边缘发射半导体激光器的表面设置至少区域性周期性接触结构。 接触结构的周期长度等于驻波的周期长度，使得半导体激光器具有由接触结构的周期长度设定的发射波长。

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