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公开(公告)号：US08995491B2
公开(公告)日：2015-03-31
申请号：US14118819
申请日：2012-06-08
Applicant: Hans Lindberg
Inventor： Hans Lindberg
CPC classification number: H01S5/1003 , H01S5/026 , H01S5/0425 , H01S5/0654 , H01S5/1032 , H01S5/1203 , H01S5/1228 , H01S5/1246 , H01S5/4031 , H01S5/4087
Abstract: An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.
Abstract translation: 边缘发射半导体激光器包括嵌入有产生激光辐射的有源层的第一波导层。 该激光器还包括其中没有嵌入有源层的第二波导层。 在有源层中产生的激光辐射形成驻波，其在第一波导层中具有相应的强度最大值，并且在第二波导层中具有相应的强度最小值，并且在第一波导层中具有相应的强度最小值，并且在第二波导层中具有相应的强度最大值 在半导体激光器的光束方向上的周期性间隔。 在边缘发射半导体激光器的表面设置至少区域性周期性接触结构。 接触结构的周期长度等于驻波的周期长度，使得半导体激光器具有由接触结构的周期长度设定的发射波长。
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公开(公告)号：US20140131754A1
公开(公告)日：2014-05-15
申请号：US14112000
申请日：2012-04-16
Applicant: Hans Lindberg
Inventor： Hans Lindberg
CPC classification number: H01L33/58 , H01L33/10 , H01L33/22 , H01L33/46 , H01L33/60 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
Abstract: A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.
Abstract translation: 发射辐射的半导体芯片包括具有活性区的半导体本体，其发射具有第一偏振的第一辐射分量且具有第二偏振的第二辐射分量的非偏振辐射。 晶格结构用作波片或偏振滤光器，并且引起相对于半导体芯片通过输出侧发射的辐射中的其它辐射分量的一个辐射分量的增加。 因此，半导体芯片发射具有放大的辐射分量的极化的偏振辐射。 衰减的辐射分量保留在半导体芯片中的光学结构，其将残留在半导体芯片中的衰减的辐射分量的至少一部分的偏振转换为放大的辐射分量的偏振，以及与输出侧相反的反射后侧。
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公开(公告)号：US08428094B2
公开(公告)日：2013-04-23
申请号：US12865841
申请日：2008-12-18
Applicant: Hans Lindberg , Stefan Illek
Inventor： Hans Lindberg , Stefan Illek
CPC classification number: H01S5/18375 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/0654 , H01S5/1021 , H01S5/141 , H01S5/4031
Abstract: A surface-emitting semiconductor laser is described, with a semiconductor chip (1), which has a substrate (2), a DBR-mirror (3) applied to the substrate (2) and an epitaxial layer sequence (4) applied to the DBR mirror (3), said layer sequence comprising a radiation-emitting active layer (5), and with an external resonator mirror (9) arranged outside the semiconductor chip (1). The DBR mirror (3) and the substrate (2) are partially transmissive for the radiation (6) emitted by the active layer (5) and the back (14) of the substrate (2) remote from the active layer (5) is reflective to the emitted radiation (6).
Abstract translation: 使用半导体芯片（1）来描述表面发射半导体激光器，该半导体芯片（1）具有衬底（2），施加到衬底（2）的DBR镜（3）和施加到衬底的外延层序列（4） DBR镜（3），所述层序列包括辐射发射有源层（5），以及布置在半导体芯片（1）外部的外部谐振器反射镜（9）。 对于由有源层（5）发射的辐射（6）和远离有源层（5）的衬底（2）的背面（14），DBR反射镜（3）和衬底（2）是部分透射的 反射到发射的辐射（6）。
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公开(公告)号：US20110122911A1
公开(公告)日：2011-05-26
申请号：US12865841
申请日：2008-12-18
Applicant: Hans Lindberg , Stefan Illek
Inventor： Hans Lindberg , Stefan Illek
IPC: H01S5/187
CPC classification number: H01S5/18375 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/0654 , H01S5/1021 , H01S5/141 , H01S5/4031
Abstract: A surface-emitting semiconductor laser is described, with a semiconductor chip (1), which has a substrate (2), a DBR-mirror (3) applied to the substrate (2) and an epitaxial layer sequence (4) applied to the DBR mirror (3), said layer sequence comprising a radiation-emitting active layer (5), and with an external resonator mirror (9) arranged outside the semiconductor chip (1). The DBR mirror (3) and the substrate (2) are partially transmissive for the radiation (6) emitted by the active layer (5) and the back (14) of the substrate (2) remote from the active layer (5) is reflective to the emitted radiation (6).
Abstract translation: 使用半导体芯片（1）来描述表面发射半导体激光器，该半导体芯片（1）具有衬底（2），施加到衬底（2）的DBR镜（3）和施加到衬底的外延层序列（4） DBR镜（3），所述层序列包括辐射发射有源层（5），以及布置在半导体芯片（1）外部的外部谐振器反射镜（9）。 对于由有源层（5）发射的辐射（6）和远离有源层（5）的衬底（2）的背面（14），DBR反射镜（3）和衬底（2）是部分透射的 反射到发射的辐射（6）。
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公开(公告)号：US07756188B2
公开(公告)日：2010-07-13
申请号：US12208814
申请日：2008-09-11
Applicant: Hans Lindberg , Stefan Illek
Inventor： Hans Lindberg , Stefan Illek
IPC: H01S3/08
CPC classification number: H01S5/026 , H01S5/041 , H01S5/1071 , H01S5/1085 , H01S5/183 , H01S5/4025 , H01S5/4056
Abstract: A semiconductor laser device (5) comprising at least one semiconductor laser chip (7) is provided, wherein the semiconductor laser chip (7) contains an active layer that emits electromagnetic radiation. Further, at least one corner reflector (1) is formed in the semiconductor laser chip (7). The corner reflector (1) has a first and a second reflective surface (14, 15), wherein the first and the second reflective surface (14, 15) are arranged at an angle of less than 90 degrees with respect to one another. This results in an improved emission characteristic of the radiation emitted by the semiconductor laser device (5).
Abstract translation: 提供了包括至少一个半导体激光器芯片（7）的半导体激光器件（5），其中半导体激光器芯片（7）包含发射电磁辐射的有源层。 此外，在半导体激光芯片（7）中形成至少一个角部反射器（1）。 角部反射器（1）具有第一和第二反射表面（14,15），其中第一和第二反射表面（14,15）相对于彼此以小于90度的角度布置。 这导致半导体激光装置（5）发射的辐射的发射特性得到改善。
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Patent Agency Ranking
公开(公告)号：USD348891S
公开(公告)日：1994-07-19
申请号：US914143
申请日：1992-07-17
Applicant: Lars Markusson , Hans Lindberg , Lars-Gunnar Wallstrom
Designer： Lars Markusson , Hans Lindberg , Lars-Gunnar Wallstrom
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公开(公告)号：USD340464S
公开(公告)日：1993-10-19
申请号：US914142
申请日：1992-07-17
Applicant: Lars Markusson , Hans Lindberg , Lars-Gunnar Wallstrom
Designer： Lars Markusson , Hans Lindberg , Lars-Gunnar Wallstrom
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公开(公告)号：US4580354A
公开(公告)日：1986-04-08
申请号：US609668
申请日：1984-05-14
Applicant: Hans Lindberg
Inventor： Hans Lindberg
CPC classification number: F26B21/08
Abstract: For determining the relative humidity of a highly moist gas, particularly air exiting from a wood-drying apparatus, there is used a humidity sensing arrangement having a capacitive sensor, whose capacitance varies with changes in the relative humidity of gas to which it is exposed, and means for generating an output signal proportional to the prevailing capacitance of said capacitive sensor. The capacitive sensor is exposed to a heated partial flow of the highly moist gas, and the output signal of the output signal generating means is modified in correspondence with the extent to which the partial flow has been heated.
Abstract translation: 为了确定高湿气体，特别是从木材干燥设备排出的空气的相对湿度，使用具有电容传感器的湿度感测装置，其电容随着暴露于其中的气体的相对湿度的变化而变化， 以及用于产生与所述电容式传感器的主要电容成比例的输出信号的装置。 电容式传感器暴露于高湿度气体的加热部分流动，并且输出信号发生装置的输出信号根据部分流量被加热的程度而被修改。
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公开(公告)号：US09312441B2
公开(公告)日：2016-04-12
申请号：US14112000
申请日：2012-04-16
Applicant: Hans Lindberg
Inventor： Hans Lindberg
CPC classification number: H01L33/58 , H01L33/10 , H01L33/22 , H01L33/46 , H01L33/60 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
Abstract: A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.
Abstract translation: 发射辐射的半导体芯片包括具有活性区的半导体本体，其发射具有第一偏振的第一辐射分量且具有第二偏振的第二辐射分量的非偏振辐射。 晶格结构用作波片或偏振滤波器，并且引起相对于半导体芯片通过输出侧发射的辐射中的另一辐射分量的一个辐射分量的增加。 因此，半导体芯片发射具有放大的辐射分量的极化的偏振辐射。 衰减的辐射分量保留在半导体芯片中的光学结构，其将残留在半导体芯片中的衰减的辐射分量的至少一部分的偏振转换为放大的辐射分量的偏振，以及与输出侧相反的反射后侧。
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公开(公告)号：US5628874A
公开(公告)日：1997-05-13
申请号：US392761
申请日：1995-02-23
Applicant: Hans Lindberg , Birgitta Sundblad
Inventor： Hans Lindberg , Birgitta Sundblad
CPC classification number: D21C11/04 , D21C11/066
Abstract: The present invention relates to an environmental-friendly process for reducing the content of chloride in a liquor inventory of a chemical pulp mill. According to the invention, in a recovery system for pulping chemicals containing sulphur and an alkali metal, precipitator dust formed in a recovery boiler is collected and withdrawn, dissolved in water and electrolyzed for production of chlorine or hydrochloric acid in the anolyte. Since the dust normally contains a large amount of sodium sulphate, sulphuric acid and sodium hydroxide can also be produced in the electrolysis. To reduce the content of impurities, before the electrolysis, the pH of the aqueous solution is adjusted to above about 10 to precipitate inorganic substances which are separated-off together with flocculated or undissolved substances.
Abstract translation: PCT No.PCT / SE93 / 00688 Sec。 371日期1995年2月23日 102（e）1995年2月23日PCT PCT 1993年8月18日PCT公布。 第WO94 / 04747号公报 日期：1994年3月3日本发明涉及一种用于降低化学纸浆厂的液体库存中的氯化物含量的环保方法。 根据本发明，在用于制备含硫和碱金属的化学品的回收系统中，在回收锅炉中形成的除尘器粉尘被收集和抽出，溶解在水中并电解以在阳极电解液中生产氯或盐酸。 由于粉尘通常含有大量的硫酸钠，所以在电解中也可以生成硫酸和氢氧化钠。 为了减少杂质的含量，在电解之前，将水溶液的pH调节至约10以上，以沉淀与絮凝或未溶解的物质一起分离的无机物质。
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