公开(公告)号：US20130183625A1

公开(公告)日：2013-07-18

申请号：US13444504

申请日：2012-04-11

Applicant: Chien-Min SUNG ,  I-Chiao Lin ,  Hung-Cheng Lin

Inventor： Chien-Min SUNG ,  I-Chiao Lin ,  Hung-Cheng Lin

IPC: G03F7/20 ,  B82Y40/00

CPC classification number: B82Y40/00 ,  B82Y30/00 ,  C01B32/184

Abstract: A method for fabricating patterned graphene structures, which adopts a photolithographic etching process to fabricate patterned graphene structures, comprises steps: providing a substrate; forming a catalytic layer on the substrate; forming a carbon layer on the catalytic layer; heating the carbon layer to a synthesis temperature to form a graphene layer. A photolithographic etching process is performed on the catalytic layer before formation of the carbon layer. Alternatively, a photolithographic etching process is performed on the carbon layer before heating. Alternatively, a photolithographic etching process is performed on the graphene layer after heating. Compared with the laser etching process, the photolithographic etching process is suitable to fabricate large-area patterned graphene structures and has advantages of high productivity and low cost.

Abstract translation: 一种用于制造图案化石墨烯结构的方法，其采用光刻蚀刻工艺来制造图案化的石墨烯结构，包括以下步骤：提供衬底; 在基板上形成催化层; 在催化层上形成碳层; 将碳层加热到合成温度以形成石墨烯层。 在形成碳层之前对催化层进行光刻蚀刻工艺。 或者，在加热之前对碳层进行光刻蚀刻工艺。 或者，加热后对石墨烯层进行光刻蚀刻工艺。 与激光蚀刻工艺相比，光刻蚀刻工艺适于制造大面积图案化的石墨烯结构，并具有生产率高，成本低的优点。

公开(公告)号：US08101447B2

公开(公告)日：2012-01-24

申请号：US11961478

申请日：2007-12-20

Applicant: Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L33/20

CPC classification number: H01L33/10 ,  H01L33/20

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract translation: 本发明公开了一种发光二极管（LED）元件及其制造方法，其可以提高LED的光提取效率，其中蚀刻基板以获得具有倾斜的自然晶体面的池，并且LED外延结构选择性地 形成在盆地内。 由此，得到具有多个倾斜的LED元件。 通过倾斜，全内反射的概率降低，LED的光提取效率得到提升。

公开(公告)号：US20100140653A1

公开(公告)日：2010-06-10

申请号：US12709105

申请日：2010-02-19

Applicant: Hung-Cheng LIN ,  Chia-Ming LEE ,  Jen-Inn CHYI

Inventor： Hung-Cheng LIN ,  Chia-Ming LEE ,  Jen-Inn CHYI

IPC: H01L33/00

CPC classification number: H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以在雕刻区域上形成化学反应层; 选择性地蚀刻雕刻区域以形成多个凹陷区域并形成多个凸区域; 在衬底的元件区域和雕刻区域上外延生长半导体层结构; 通过光刻工艺将元件区域上的半导体层结构制成LED元件。

公开(公告)号：US07598105B2

公开(公告)日：2009-10-06

申请号：US11963517

申请日：2007-12-21

Applicant: Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以形成化学反应层。 接下来，蚀刻基板以形成具有化学反应层顶部的多个凹区域和多个凸区域。 接下来，去除化学反应层，以形成衬底表面上的凹区和凸区的不规则几何形状。 然后，在衬底的表面上外延形成半导体发光结构。 因此，本发明可以实现具有改善的内部和外部量子效率的发光二极管结构。

公开(公告)号：US20070268445A1

公开(公告)日：2007-11-22

申请号：US11512193

申请日：2006-08-30

Applicant: Hsiao-Fen Chen ,  Chen-Chi Lin ,  Hung-Cheng Lin

Inventor： Hsiao-Fen Chen ,  Chen-Chi Lin ,  Hung-Cheng Lin

IPC: G02F1/1339

CPC classification number: G02F1/13392 ,  G02F1/1341 ,  G02F2001/133388 ,  G02F2203/69

Abstract: A liquid crystal display includes: a first substrate and a second substrate; a liquid crystal layer filling between the first substrate and the second substrate; and a plurality of sealant observation windows arranged on the second substrate, wherein each sealant observation windows is an enclosed pattern formed by smooth curve; and a sealant covering a portion of sealant observation windows and surrounding the liquid crystal layer to bond the first substrate and the second substrate. In the present invention, those sealant observation windows can avoid the condition of unequal cell gap and increase the convenience of monitoring the spreading condition of the sealant.

Abstract translation: 液晶显示器包括：第一基板和第二基板; 填充在第一基板和第二基板之间的液晶层; 以及布置在所述第二基板上的多个密封剂观察窗，其中每个密封剂观察窗是由平滑曲线形成的封闭图案; 以及密封剂，其覆盖密封剂观察窗的一部分并且围绕液晶层以结合第一基板和第二基板。 在本发明中，这些密封材料观察窗可以避免电池间隙不均匀的情况，并且增加监控密封剂扩散状态的便利性。

公开(公告)号：US20210057607A1

公开(公告)日：2021-02-25

申请号：US16917346

申请日：2020-06-30

Applicant: HUNG-CHENG LIN ,  HUNG-KUANG HSU ,  HUA-CHEN HSU

Inventor： HUNG-CHENG LIN ,  HUNG-KUANG HSU ,  HUA-CHEN HSU

IPC: H01L33/14 ,  H01L25/075 ,  H01L25/16 ,  H01L33/00

Abstract: A diode array is provided. The diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array, wherein each of the light emitting diodes includes a stack of functional layers comprising a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer located between the first type semiconductor layer and the second type semiconductor layer, wherein at least one of the light emitting diodes includes: a first current limiting region abutting a vertically extending boundary of the second semiconductor layer; wherein, with respect to a top down view, the first current limiting region is formed about an outer edge of the light emitting diode and an outer perimeter of the first current limiting region is equal to or less than 400 micrometers (μm).

公开(公告)号：US09220512B2

公开(公告)日：2015-12-29

申请号：US13430310

申请日：2012-03-26

Applicant: Jason Shiang Ching ,  Pei Hua Tsai ,  Jia Bin Li ,  Hung Cheng Lin ,  Chih Chiang Fu

Inventor： Jason Shiang Ching ,  Pei Hua Tsai ,  Jia Bin Li ,  Hung Cheng Lin ,  Chih Chiang Fu

IPC: A61B17/16 ,  A61C3/02 ,  A61C1/00

CPC classification number: A61B17/1615 ,  A61B17/16 ,  A61B2017/00831 ,  A61B2017/00836 ,  A61C1/00 ,  A61C3/02

Abstract: A medical drill is disclosed, which is made of amorphous alloy, the amorphous alloy is zirconium amorphous alloy comprising 45 at % or above of zirconium, wherein the tensile strength of the medical drill is 1500-2500 Mpa, and the Vicker's hardness of the medical drill is 400-750. Moreover, a medical drill made of titanium amorphous alloy is also disclosed.

Abstract translation: 公开了一种由非晶态合金制成的医用钻头，该非晶态合金是由锆的45原子％以上的锆的非晶合金，其中医用钻的拉伸强度为1500-2500Mpa，医疗器具的维氏硬度 演练是400-750。 此外，还公开了由钛非晶合金制成的医用钻头。

公开(公告)号：US20130221268A1

公开(公告)日：2013-08-29

申请号：US13483942

申请日：2012-05-30

Applicant: Chien-Min SUNG ,  I-Chiao Lin ,  Hung-Cheng Lin

Inventor： Chien-Min SUNG ,  I-Chiao Lin ,  Hung-Cheng Lin

IPC: C09K5/00

CPC classification number: C09K5/14

Abstract: A thermally-conductive paste comprises a carrier, at least one graphene platelet, and a plurality of packing materials. The graphene platelets and the packing materials are dispersed in the carrier. At least a portion of the packing materials contact the surface of the graphene platelet. The graphene platelet has a very high thermal conductivity coefficient and a characteristic 2D structure and thus can provide continuous and long-distance thermal conduction paths for the thermally-conductive paste. Thereby is greatly improved the thermal conduction performance of the thermally-conductive paste.

Abstract translation: 导热膏包括载体，至少一个石墨烯薄片和多个包装材料。 石墨烯血小板和包装材料分散在载体中。 至少一部分包装材料接触石墨烯薄片的表面。 石墨烯薄片具有非常高的导热系数和特征的2D结构，因此可为导热浆提供连续和长距离的导热路径。 从而大大提高导热膏的导热性能。

公开(公告)号：US07956977B2

公开(公告)日：2011-06-07

申请号：US11512193

申请日：2006-08-30

Applicant: Hsiao-Fen Chen ,  Chen-Chi Lin ,  Hung-Cheng Lin

Inventor： Hsiao-Fen Chen ,  Chen-Chi Lin ,  Hung-Cheng Lin

IPC: G02F1/1339 ,  G02F1/13

CPC classification number: G02F1/13392 ,  G02F1/1341 ,  G02F2001/133388 ,  G02F2203/69

Abstract: A liquid crystal display includes: a first substrate and a second substrate; a liquid crystal layer filling between the first substrate and the second substrate; and a plurality of sealant observation windows arranged on the second substrate, wherein each sealant observation windows is an enclosed pattern formed by smooth curve; and a sealant covering a portion of sealant observation windows and surrounding the liquid crystal layer to bond the first substrate and the second substrate. In the present invention, those sealant observation windows can avoid the condition of unequal cell gap and increase the convenience of monitoring the spreading condition of the sealant.

Abstract translation: 液晶显示器包括：第一基板和第二基板; 填充在第一基板和第二基板之间的液晶层; 以及布置在所述第二基板上的多个密封剂观察窗，其中每个密封剂观察窗是由平滑曲线形成的封闭图案; 以及密封剂，其覆盖密封剂观察窗的一部分并且围绕液晶层以结合第一基板和第二基板。 在本发明中，这些密封材料观察窗可以避免电池间隙不均匀的情况，并且增加监控密封剂扩散状态的便利性。

公开(公告)号：US07799593B2

公开(公告)日：2010-09-21

申请号：US12538427

申请日：2009-08-10

Applicant: Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以形成化学反应层。 接下来，蚀刻基板以形成具有化学反应层顶部的多个凹区域和多个凸区域。 接下来，去除化学反应层，以形成衬底表面上的凹区和凸区的不规则几何形状。 然后，在衬底的表面上外延形成半导体发光结构。 因此，本发明可以实现具有改善的内部和外部量子效率的发光二极管结构。