公开(公告)号：US20120106196A1

公开(公告)日：2012-05-03

申请号：US13232301

申请日：2011-09-14

Applicant: Hyun Jin CHO ,  Byoungho CHEONG ,  Prudnikov OLEG ,  Hyundeok IM

Inventor： Hyun Jin CHO ,  Byoungho CHEONG ,  Prudnikov OLEG ,  Hyundeok IM

IPC: F21V7/04

CPC classification number: G02B6/002 ,  G02B6/0046 ,  G02B6/0068 ,  G02B6/0073

Abstract: A light guide plate includes a light incident surface, a light facing surface facing the light incident surface, a connection surface connecting the light incident surface with the light facing surface, and a top surface connected with the light incident surface, the light facing surface, and the connection surface. The light incident surface receives light from a light source, the light facing surface reflects light, and the top surface outputs light toward a display panel. The connection surface includes at least two absorption surfaces parallel to a straight line linking a center of an arc with an end of the light incident surface and at least one reflective surface interposed the two adjacent absorption surfaces to reflect the light.

Abstract translation: 导光板包括光入射表面，面对光入射表面的面向光的表面，连接光入射表面和面向光的表面的连接表面，以及与光入射表面，面向光的表面连接的顶表面， 和连接面。 光入射面接收来自光源的光，面向光的表面反射光，顶表面向显示面板输出光。 连接表面包括平行于连接弧的中心与光入射表面的端部的直线的至少两个吸收表面和插入两个相邻吸收表面以反射光的至少一个反射表面。

公开(公告)号：US20110307631A1

公开(公告)日：2011-12-15

申请号：US13155717

申请日：2011-06-08

Applicant: Sangbong Park ,  Cheng Zhang ,  Hyun Jin Cho ,  Lindsay John Lawrence

Inventor： Sangbong Park ,  Cheng Zhang ,  Hyun Jin Cho ,  Lindsay John Lawrence

IPC: G06F15/16

CPC classification number: G06Q30/0201 ,  G06Q10/101 ,  G06Q30/0241 ,  G06Q50/01

Abstract: A method and system for providing asynchronous data communication between a plurality of devices in a networked environment is disclosed. A user using a first device views view media content received from a first content provider of a plurality of service providers. At a request of the user, a message including a data link to the media content is generated and asynchronously sent to a second device via a network. The data link contained in the received message on the second device is used to retrieve the media content from a second content provider. Various action commands contained in the message are used to control the operation of the media content on the second device.

Abstract translation: 公开了一种用于在网络环境中的多个设备之间提供异步数据通信的方法和系统。 使用第一设备的用户观看从多个服务提供商的第一内容提供商接收的媒体内容。 在用户的请求下，生成包括到媒体内容的数据链接的消息，并通过网络异步地发送到第二设备。 包含在第二设备上的接收到的消息中的数据链接用于从第二内容提供商检索媒体内容。 包含在消息中的各种动作命令用于控制第二设备上的媒体内容的操作。

公开(公告)号：US07969777B1

公开(公告)日：2011-06-28

申请号：US12326027

申请日：2008-12-01

Applicant: Hyun-Jin Cho ,  Farid Nemati

Inventor： Hyun-Jin Cho ,  Farid Nemati

IPC: G11C11/39

CPC classification number: G11C11/39

Abstract: A new memory cell can contain only a single thyristor. There is no need to include an access transistor in the cell. In one embodiment, the thyristor is a thin capacitively coupled thyristor. The new memory cell can be connected to word, bit, and control lines in several ways to form different memory arrays. Timing and voltage levels of word, bit and control lines are disclosed.

Abstract translation: 新的存储单元只能包含一个晶闸管。 不需要在电池中包括存取晶体管。 在一个实施例中，晶闸管是薄电容耦合晶闸管。 新的存储单元可以以多种方式连接到字，位和控制线，以形成不同的存储器阵列。 公开了字，位和控制线的时序和电压电平。

公开(公告)号：US20100169544A1

公开(公告)日：2010-07-01

申请号：US12356306

申请日：2009-01-20

Applicant: Young-Ik EOM ,  Dong-Kun SHIN ,  Hyun-Jin CHO

Inventor： Young-Ik EOM ,  Dong-Kun SHIN ,  Hyun-Jin CHO

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7202 ,  G06F2212/7203

Abstract: A method for distributing log block associativity in log buffer-based flash translation layer (FTL) includes, if write request on page p is generated, checking whether log block associated with corresponding data block that write request is generated exists or not by checking log block mapping table storing mapping information between data blocks and log blocks, wherein the associativity of each log block to data block is set to equal to or less than predetermined value K in advance, and K is a natural number, if log block associated with corresponding data block that write request is generated exists, checking whether associated log block is random log block or sequential log block, and if associated log block is random log block, writing data that write request is generated in first free page of random log block.

Abstract translation: 在基于日志缓冲的闪存转换层（FTL）中分配日志块关联性的方法包括：如果生成了第p页上的写请求，则通过检查日志块来检查是否存在与写入请求相关联的数据块相关联的日志块是否存在 映射表存储数据块和日志块之间的映射信息，其中每个日志块与数据块的相关性被预先设置为等于或小于预定值K，并且如果与对应数据相关联的日志块，则K是自然数 产生写请求的块，检查关联的日志块是随机日志块还是顺序日志块，如果关联的日志块是随机日志块，则写入请求的数据在随机日志块的第一个空闲页中生成。

公开(公告)号：US07630235B2

公开(公告)日：2009-12-08

申请号：US11692627

申请日：2007-03-28

Applicant: Hyun-Jin Cho

Inventor： Hyun-Jin Cho

IPC: G11C11/34

CPC classification number: G11C11/39

Abstract: A memory cell is provided which includes an access transistor and a gated lateral thyristor (GLT) device. The access transistor includes a source node. The gated lateral thyristor (GLT) device includes an anode node coupled to the source node of the access transistor.

Abstract translation: 提供了一种存储单元，其包括存取晶体管和门控侧栅晶体管（GLT）器件。 存取晶体管包括源节点。 门控侧向晶闸管（GLT）器件包括耦合到存取晶体管的源极节点的阳极节点。

公开(公告)号：US07504286B2

公开(公告)日：2009-03-17

申请号：US11692313

申请日：2007-03-28

Applicant: Hyun-Jin Cho

Inventor： Hyun-Jin Cho

IPC: H01L21/328 ,  H01L21/332

CPC classification number: H01L27/1027

Abstract: A method is provided for fabricating a memory device. A semiconductor substrate is provided which includes a first well region having a first conductivity type, a second well region having the first conductivity type, a first gate structure overlying the first well region and the second gate structure overlying the second well region. An insulating material layer is conformally deposited overlying exposed portions of the semiconductor substrate. Photosensitive material is provided over a portion of the insulating material layer which overlies a portion of the second well region. The photosensitive material exposes portions of the insulating material layer. The exposed portions of the insulating material layer are anisotropically etched to provide a sidewall spacer adjacent a first sidewall of the second gate structure, and an insulating spacer block formed overlying a portion of the second gate structure and adjacent a second sidewall of the second gate structure. A drain region and a source/base region are formed in the semiconductor substrate adjacent the first gate structure and a cathode region is formed in the semiconductor substrate adjacent the second gate structure. The drain region, the source/base region, and the cathode region have a second conductivity type. An anode region of the first conductivity type is formed adjacent the second gate structure in a portion of the source/base region.

Abstract translation: 提供了一种用于制造存储器件的方法。 提供一种半导体衬底，其包括具有第一导电类型的第一阱区，具有第一导电类型的第二阱区，覆盖第一阱区的第一栅极结构和覆盖第二阱区的第二栅极结构。 绝缘材料层被共面沉积在半导体衬底的暴露部分上。 在绝缘材料层的覆盖在第二阱区的一部分上的部分上提供感光材料。 感光材料暴露绝缘材料层的部分。 绝缘材料层的暴露部分被各向异性蚀刻以提供与第二栅极结构的第一侧壁相邻的侧壁间隔件，以及形成在第二栅极结构的一部分上并且邻近第二栅极结构的第二侧壁的绝缘间隔块 。 漏极区域和源极/基极区域形成在与第一栅极结构相邻的半导体衬底中，并且阴极区域形成在邻近第二栅极结构的半导体衬底中。 漏极区域，源极/基极区域和阴极区域具有第二导电类型。 第一导电类型的阳极区域在源极/基极区域的一部分中与第二栅极结构相邻形成。

公开(公告)号：US20080203094A1

公开(公告)日：2008-08-28

申请号：US11832885

申请日：2007-08-02

Applicant: Hyun Jin CHO

Inventor： Hyun Jin CHO

IPC: B65D17/34

CPC classification number: B65D17/4012 ,  B65D2517/0014

Abstract: Disclosed is a can end with an improved opening and drinking convenience. The can end includes a body having an opening piece defined in a predetermined region of an upper surface thereof by scores, and a tab coupled to the body by means of a rivet. The tab has a first end located at one side of the rivet to form a grip portion, and a second end located at the other side of the rivet to form a pressure portion for pressing the opening piece. The scores include a center score formed at the center of the opening piece and having a center axis extending in the same direction as an extending direction of the tab, a first boundary score continuously extended symmetrically left and right from a first end of the center score adjacent to the rivet, and a second boundary score having a drinking line portion continuously extended symmetrically left and right from a second end of the center score opposite to the rivet, and lengthened line portions extended downward from both ends of the drinking line portion to the vicinity of both ends of the first boundary score. The first and second boundary scores divide the opening piece from the remaining region of the upper surface of the body. At least a region between the first boundary score and the second boundary score forms a stay portion.

Abstract translation: 公开了一种具有改善的开放和饮用便利性的罐头。 罐端包括具有通过分数限定在其上表面的预定区域中的开口件的主体和通过铆钉联接到主体的突出部。 突片具有位于铆钉一侧的第一端，以形成抓握部分，并且第二端位于铆钉的另一侧，以形成用于按压开口件的压力部分。 分数包括形成在开口部件的中心处的中心分数，并且具有沿与拉片的延伸方向相同的方向延伸的中心轴线，从中心分数的第一端向右和向右连续地延伸的第一边界分数 以及第二边界分数，其具有从与所述铆钉相反的中心分数的第二端向左和向右对称地连续延伸的饮用线部分，以及从所述饮用线部分的两端向下延伸的线部分， 第一边界得分两端附近。 第一和第二边界分数将开口部分与身体上表面的剩余区域分开。 至少第一边界得分和第二边界分数之间的区域形成停留部分。

公开(公告)号：US07405963B2

公开(公告)日：2008-07-29

申请号：US11361334

申请日：2006-02-24

Applicant: Farid Nemati ,  Hyun-Jin Cho ,  Robert Homan Igehy

Inventor： Farid Nemati ,  Hyun-Jin Cho ,  Robert Homan Igehy

IPC: G11C11/00

CPC classification number: G11C11/39

Abstract: A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal positive feedback loop of the thyristor. In one example implementation, the internal positive feedback loop in the thyristor is used to restore the conducting state of a device after the thyristor current drops below the holding current. A pulse and/or periodic waveform are defined and applied to ensure that the thyristor is not released from its conducting state. The time average of the periodic restore current in the thyristor may be lower than the holding current threshold. While not necessarily limited to memory cells that are thyristor-based, various embodiments of the invention have been found to be the particularly useful for high-speed, low-power memory cells in which a thin capacitively-coupled thyristor is used to provide a bi-stable storage element.

Abstract translation: 使用动态操作的恢复电路将电压或电流恢复脉冲信号施加到基于晶闸管的存储器单元，并且其中使用晶闸管的内部正反馈回路在单元中恢复数据。 在一个示例实现中，晶闸管中的内部正反馈环路用于在晶闸管电流下降到保持电流以下之前恢复器件的导通状态。 定义并施加脉冲和/或周期波形以确保晶闸管不从其导通状态释放。 晶闸管周期性恢复电流的时间平均值可能低于保持电流阈值。 虽然不一定限于基于晶闸管的存储器单元，但是已经发现本发明的各种实施例对于其中使用薄电容耦合晶闸管来提供双向的高速，低功率存储器单元特别有用 稳定存储元件

公开(公告)号：US07075122B1

公开(公告)日：2006-07-11

申请号：US10670881

申请日：2003-09-25

Applicant: Kevin J. Yang ,  Farid Nemati ,  Scott Robins ,  James D. Plummer ,  Hyun-Jin Cho

Inventor： Kevin J. Yang ,  Farid Nemati ,  Scott Robins ,  James D. Plummer ,  Hyun-Jin Cho

IPC: H01L29/72

CPC classification number: H01L27/0817 ,  H01L29/7436 ,  H01L29/7455

Abstract: In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the carbon and/or a bombardment energy and/or an anneal therefore may be selected to establish a low-voltage, leakage characteristic for the junction substantially greater than its leakage absent the carbon. In one embodiment, an anneal of the implanted carbon may be performed in common with an activation for other implant regions the semiconductor device.

公开(公告)号：US20050233506A1

公开(公告)日：2005-10-20

申请号：US11159514

申请日：2005-06-22

Applicant: Andrew Horch ,  Hyun-Jin Cho ,  Farid Nemati ,  Scott Robins ,  Rajesh Gupta ,  Kevin Yang

Inventor： Andrew Horch ,  Hyun-Jin Cho ,  Farid Nemati ,  Scott Robins ,  Rajesh Gupta ,  Kevin Yang

IPC: G11C11/39 ,  H01L29/74 ,  H01L29/749 ,  H01L21/332

CPC classification number: G11C11/39 ,  H01L27/0817 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749

Abstract: A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An activation anneal may activate dopants previously implanted for the different regions. A damaging implant of germanium or xenon or argon may be directed into select regions of the silicon including at least one p-n junction region for the access device and the thyristor. A re-crystallization anneal may then be performed to re-crystallize at least some of the damaged lattice structure resulting from the damaging implant. The re-crystallization anneal may use a temperature less than that of the previous activation anneal.

Abstract translation: 制造基于晶闸管的存储器的方法可以包括在硅中形成用于限定可控硅和串联连接的存取装置的不同的相反导电型区域。 激活退火可以激活先前为不同区域植入的掺杂剂。 可以将锗或氙或氩的有害植入物引导到硅的选择区域中，包括用于进入装置和晶闸管的至少一个p-n结区域。 然后可以进行重结晶退火，以重新结晶由损伤性植入物引起的至少一些损伤的晶格结构。 再结晶退火可以使用比先前激活退火的温度低的温度。