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    SEMICONDUCTOR SWITCHING DEVICE
    2.
    发明申请
    SEMICONDUCTOR SWITCHING DEVICE 有权
    半导体开关器件

    公开(公告)号：US20120014177A1

    公开(公告)日：2012-01-19

    申请号：US13243772

    申请日：2011-09-23

    Applicant: Hyun-Jin Cho

    Inventor： Hyun-Jin Cho

    IPC: G11C11/21 ,  H03K17/687 ,  G11C11/40

    CPC classification number: G11C13/0004

    Abstract: A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.

    Abstract translation: 提供了一种开关装置及其制作和操作方法。 一方面，提供一种操作开关器件的方法，其包括提供具有栅极，源极区域，漏极区域和体区域的MOS晶体管。 提供了具有集电极，基极和发射极的双极晶体管。 MOS晶体管的体区用作双极晶体管的基极，MOS晶体管的漏极区域用作双极晶体管的集电极。 MOS晶体管的激活导致双极晶体管导通。 MOS晶体管被激活以导通双极晶体管，并且双极晶体管将电流传送到源极区域。

    Dynamic random access memory (DRAM) cells and methods for fabricating the same
    3.
    发明授权
    Dynamic random access memory (DRAM) cells and methods for fabricating the same 有权
    动态随机存取存储器（DRAM）单元及其制造方法

    公开(公告)号：US07977172B2

    公开(公告)日：2011-07-12

    申请号：US12330282

    申请日：2008-12-08

    Applicant: Hyun-Jin Cho ,  Sang H. Dhong ,  Jung-Suk Goo ,  Gurupada Mandal

    Inventor： Hyun-Jin Cho ,  Sang H. Dhong ,  Jung-Suk Goo ,  Gurupada Mandal

    IPC: H01L21/84

    CPC classification number: H01L27/10802 ,  H01L27/108 ,  H01L27/1082 ,  H01L27/1087 ,  H01L29/7841

    Abstract: A method for fabricating a memory cell is provided. A trench is formed in a semiconductor structure that comprises a semiconductor layer, and a trench capacitor is formed in the trench. Conductivity determining impurities are implanted into the semiconductor structure to create a well region in the semiconductor layer that is directly coupled to the trench capacitor. A gate structure is formed overlying a portion of the well region. Conductivity determining ions are then implanted into other portions of the well region to form a source region and a drain region, and to define an active body region between the source region and the drain region. The active body region directly contacts the trench capacitor.

    Abstract translation: 提供一种制造存储单元的方法。 在包括半导体层的半导体结构中形成沟槽，并且在沟槽中形成沟槽电容器。 将导电性确定杂质注入到半导体结构中以在直接耦合到沟槽电容器的半导体层中形成阱区。 形成覆盖阱区域的一部分的栅极结构。 然后将确定电导的离子注入阱区的其它部分以形成源区和漏区，并且在源区和漏区之间限定有源体区。 有源体区域直接接触沟槽电容器。

    Semiconductor switching device
    4.
    发明授权
    Semiconductor switching device 有权
    半导体开关装置

    公开(公告)号：US07679955B2

    公开(公告)日：2010-03-16

    申请号：US11615983

    申请日：2006-12-24

    Applicant: Hyun-Jin Cho

    Inventor： Hyun-Jin Cho

    IPC: G11C11/34

    CPC classification number: G11C13/0004

    Abstract: A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.

    Abstract translation: 提供了一种开关装置及其制作和操作方法。 一方面，提供了一种操作开关器件的方法，其包括提供具有栅极，源极区域，漏极区域和体区域的MOS晶体管。 提供了具有集电极，基极和发射极的双极晶体管。 MOS晶体管的体区用作双极晶体管的基极，MOS晶体管的漏极区域用作双极晶体管的集电极。 MOS晶体管的激活导致双极晶体管导通。 MOS晶体管被激活以导通双极晶体管，并且双极晶体管将电流传送到源极区域。

    FINFET STRUCTURE AND METHODS
    6.
    发明申请
    FINFET STRUCTURE AND METHODS 审中-公开
    FINFET结构和方法

    公开(公告)号：US20090108353A1

    公开(公告)日：2009-04-30

    申请号：US11932136

    申请日：2007-10-31

    Applicant: Hyun-Jin CHO

    Inventor： Hyun-Jin CHO

    IPC: H01L27/12 ,  H01L21/84

    CPC classification number: H01L29/7853 ,  H01L29/66795

    Abstract: A FinFET structure is fabricated by patterning a semiconductor substrate to form a nonplanar semiconductor structure including a first fin, a second fin substantially parallel to the first fin, and an inter-fin semiconductor strip coupled therebetween. The first fin, the second fin, and the inter-fin semiconductor strip each extend from a drain region to a source region. A gate dielectric layer is formed on the first and second fins and the inter-fin semiconductor strip in a gate region substantially orthogonal to the first and second fins and between the drain and source region. A gate electrode layer is formed on the gate dielectric layer. The semiconductor substrate may be a silicon-on-insulator (SOI) material comprising a buried oxide layer (BOX) having a silicon layer formed thereon.

    Abstract translation: 通过图案化半导体衬底以形成非平面半导体结构来制造FinFET结构，该非平面半导体结构包括第一鳍片，基本上平行于第一鳍片的第二鳍片和耦合在其间的鳍间半导体条带。 第一鳍片，第二鳍片和鳍片间半导体条每个从漏极区域延伸到源极区域。 在与第一和第二鳍片基本正交并且在漏极和源极区域之间的栅极区域中的第一和第二鳍片和鳍间半导体条上形成栅极电介质层。 栅极电极层形成在栅极电介质层上。 半导体衬底可以是包括其上形成有硅层的掩埋氧化物层（BOX）的绝缘体上硅（SOI）材料。

    Hand Skin Care Apparatus
    7.
    发明申请
    Hand Skin Care Apparatus 审中-公开
    手部护肤品

    公开(公告)号：US20080262481A1

    公开(公告)日：2008-10-23

    申请号：US11817154

    申请日：2005-03-18

    Applicant: Hyun Jin Cho

    Inventor： Hyun Jin Cho

    IPC: A61B18/04

    CPC classification number: A45D44/00 ,  A47K10/48 ,  A61N5/0616 ,  A61N2005/0642 ,  A61N2005/0654 ,  A61N2005/066

    Abstract: The present invention relates to a hand skin care apparatus for performing multiple functions of drying and cosmetically treating hands, caring hand skin, aiding health, therapeutic activation, and fomentation, therapeutic activation, and fomentation, and employs a cover pivotally opened and closed about a hinge shaft of a main body for sucking air, projecting infrared rays, heating using infrared rays, and projecting laser beams. The introduced air passes through the infrared ray projector and is blown to where a user's hands are placed such that hands are rapidly dried by hot air and heat, infrared rays, and infrared rays generated by the infrared ray projector and the infrared exothermic device prevent and remove the inhabitance of bacteria causing various diseases on the hands. Thus, a user can maintain his/her hands at sanitary state. Due to the increased temperature, the apparatus of the present invention exhibits fomentation and the far infrared rays are helpful to hand skin care and health. Moreover, the low-level laser beam is projected to hands to activate the treatment of affected parts and various hand diseases, resulting in aiding health. Since a single apparatus performs various and multiple functions, the hand skin care apparatus is variously used, has various effects. Moreover, economic value and utility of the hand skin care apparatus are enhanced.

    Abstract translation: 本发明涉及一种手部护肤装置，其用于执行干燥和美容治疗手，护理皮肤，辅助健康，治疗激活和变形，治疗激活和变形的多种功能，并且使用围绕 用于吸入空气的主体的铰链轴，投射红外线，使用红外线加热和投射激光束。 引入的空气通过红外线投影仪，并被吹到用户的手放置在哪里，使得手被热空气快速干燥，由红外线投射器和红外线放热装置产生的热，红外线和红外线防止和 消除引起手上各种疾病的细菌的滋生。 因此，用户可以将他/她的手保持在卫生状态。 由于温度升高，本发明的装置显示出眩光，远红外线有助于皮肤护理和健康。 此外，低级激光束投射到手中以激活受影响部位和各种手部疾病的治疗，从而有助于健康。 由于单个装置执行各种功能，所以手部护理装置被多种使用，具有各种效果。 此外，手护肤器具的经济价值和效用得到提高。

    Stability in thyristor-based memory device
    8.
    发明授权
    Stability in thyristor-based memory device 失效
    基于晶闸管的存储器件的稳定性

    公开(公告)号：US06891205B1

    公开(公告)日：2005-05-10

    申请号：US10666220

    申请日：2003-09-19

    Applicant: Hyun-Jin Cho ,  Farid Nemati ,  Scott Robins

    Inventor： Hyun-Jin Cho ,  Farid Nemati ,  Scott Robins

    IPC: G11C11/39 ,  H01L29/74 ,  H01L29/749

    CPC classification number: H01L29/749 ,  G11C11/39 ,  H01L29/7436

    Abstract: A semiconductor device having a thyristor-based memory device exhibits improved stability under adverse operating conditions related to temperature, noise, electrical disturbances and light. In one particular example embodiment of the present invention, a semiconductor device includes a thyristor-based memory device that uses a shunt that effects a leakage current in the thyristor. The thyristor includes a capacitively-coupled control port and anode and cathode end portions. Each of the end portions has an emitter region and an adjacent base region. In one implementation, the current shunt is located between the emitter and base region of one of the end portions of the thyristor and is configured and arranged to shunt low-level current therebetween. In connection with an example embodiment, it has been discovered that shunting current in this manner improves the ability of the device to operate under adverse conditions that would, absent the shunt, result in inadvertent turn on, while keeping the standby current of the memory device to an acceptably low level.

    Abstract translation: 具有基于晶闸管的存储器件的半导体器件在与温度，噪声，电扰动和光线相关的不利操作条件下表现出改进的稳定性。 在本发明的一个具体示例实施例中，半导体器件包括基于晶闸管的存储器件，其使用在晶闸管中产生漏电流的分流器。 晶闸管包括电容耦合控制端口和阳极和阴极端部分。 每个端部具有发射极区域和相邻的基极区域。 在一个实施方案中，电流分流器位于晶闸管的一个端部的发射极和基极区域之间，并且被配置和布置成在它们之间分流低电平电流。 结合示例性实施例，已经发现，以这种方式分流电流提高了器件在不利条件下操作的能力，这种不利条件将在不存在分流的情况下导致无意中导通，同时保持存储器件的待机电流 达到可接受的低水平。

    Thyristor-based device including trench isolation
    9.
    发明授权
    Thyristor-based device including trench isolation 失效
    基于晶闸管的器件包括沟槽隔离

    公开(公告)号：US06777271B1

    公开(公告)日：2004-08-17

    申请号：US10201654

    申请日：2002-07-23

    Applicant: Scott Robins ,  Andrew Horch ,  Farid Nemati ,  Hyun-Jin Cho

    Inventor： Scott Robins ,  Andrew Horch ,  Farid Nemati ,  Hyun-Jin Cho

    IPC: H01L21332

    CPC classification number: H01L29/66363 ,  H01L21/76229 ,  H01L21/76237 ,  H01L21/763 ,  H01L27/0617 ,  H01L27/0817

    Abstract: A semiconductor device includes a thyristor designed to reduce or eliminate manufacturing and operational difficulties commonly experienced in the formation and operation of NDR devices. According to one example embodiment of the present invention, the semiconductor substrate is trenched adjacent a doped or dopable substrate region, which is formed to included at least two vertically-adjacent thyristor regions of different polarity. A capacitively-coupled control port for the thyristor is coupled to at least one of the thyristor regions. The trench also includes a dielectric material for electrically insulating the vertically-adjacent thyristor regions. The thyristor is electrically connected to other circuitry in the device, such as a transistor, and used to form a device, such as a memory cell.

    Abstract translation: 半导体器件包括设计用于减少或消除在NDR器件的形成和操作中通常经历的制造和操作困难的晶闸管。 根据本发明的一个示例实施例，半导体衬底在掺杂或可掺杂的衬底区域附近被沟槽，该衬底区域形成为包括不同极性的至少两个垂直相邻的晶闸管区域。 用于晶闸管的电容耦合控制端口耦合到至少一个晶闸管区域。 沟槽还包括用于使垂直相邻的晶闸管区域电绝缘的电介质材料。 晶闸管电连接到器件中的其它电路，例如晶体管，并用于形成诸如存储器单元的器件。

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