公开(公告)号：US20080013217A1

公开(公告)日：2008-01-17

申请号：US11768466

申请日：2007-06-26

Applicant: Jae-Suk LEE

Inventor： Jae-Suk LEE

IPC: G11B5/55

CPC classification number: G11B5/4813 ,  G11B25/043 ,  G11B33/1406

Abstract: A hard disk drive includes a voice coil motor yoke, a base to support the voice coil motor yoke, and formed of a material different from that of the voice coil motor yoke, and a thermal deformation prevention unit which is formed of a material that is substantially the same as that of the voice coil motor yoke, provided between the voice coil motor yoke and the base, and thereby preventing mechanical deformation due to different thermal expansion coefficients between the voice coil motor yoke and the base.

Abstract translation: 硬盘驱动器包括音圈马达轭，用于支撑音圈马达轭的基座，并且由与音圈马达轭不同的材料形成的热变形防止单元，该热变形防止单元由材料形成 基本上与设置在音圈马达轭和底座之间的音圈马达轭的基本相同，从而防止由于音圈马达轭和基座之间的热膨胀系数的不同引起的机械变形。

公开(公告)号：US07314814B2

公开(公告)日：2008-01-01

申请号：US10972189

申请日：2004-10-22

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: H01L21/76837

Abstract: Semiconductor devices and methods of fabricating the same are disclosed. A disclosed method comprises: partially forming a first gate stack; partially forming a second gate stack adjacent the first gate stack; forming a first interlayer dielectric; and completing the formation of the first and second gate stacks after the first interlayer dielectric has filled a distance between the first and second gate electrodes.

Abstract translation: 公开了半导体器件及其制造方法。 所公开的方法包括：部分地形成第一栅极堆叠; 部分地形成与所述第一栅极堆叠相邻的第二栅极堆叠; 形成第一层间电介质; 以及在第一层间电介质填充第一和第二栅电极之间的距离之后完成第一和第二栅极叠层的形成。

公开(公告)号：US20070152296A1

公开(公告)日：2007-07-05

申请号：US11611679

申请日：2006-12-15

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L29/00

CPC classification number: H01L28/84 ,  H01L23/5223 ,  H01L28/55 ,  H01L28/65 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The capacitor in a semiconductor device includes a substrate, a lower electrode formed over the substrate, a diffusion barrier formed over the lower electrode, a plurality of agglomerates formed over the diffusion barrier, a dielectric layer formed over the surface of the agglomerates to form an uneven surface, and an upper electrode formed over the dielectric layer.

Abstract translation: 半导体器件中的电容器包括衬底，形成在衬底上的下电极，形成在下电极上的扩散阻挡层，形成在扩散阻挡层上的多个附聚物，形成在附聚物表面上的电介质层，以形成 不平坦的表面和形成在电介质层上的上电极。

公开(公告)号：US07173155B1

公开(公告)日：2007-02-06

申请号：US11485855

申请日：2006-07-13

Applicant: Jae-Suk Lee ,  Sun-Young Chang ,  Kwan-Soo Lee ,  Myung-Hwan Jeong ,  Jung-Eun Yang

Inventor： Jae-Suk Lee ,  Sun-Young Chang ,  Kwan-Soo Lee ,  Myung-Hwan Jeong ,  Jung-Eun Yang

IPC: C07C315/00

CPC classification number: C07C309/39

Abstract: The present invention relates to a terphenyl dihalide monomer having sulfonate groups and a process for preparing the same. More particularly, the present invention relates to a terphenyl dihalide monomer having sulfonate groups prepared by a process comprising obtaining a terphenyl dihalide derivative by Suzuki cross-coupling of a tetrahalobenzene and phenylboronic acid and introducing sulfonate groups into the phenyl rings at each end of the terphenyl dihalide derivative, the resultant monomer capable of being prepared into a polymer electrolyte having superior ion conductivity through nucleophilic aromatic substitution (SNAr) polymerization due to the presence of two halogen atoms and two conducting sulfonate groups in the monomer molecule, and a process for preparing the same.

Abstract translation: 本发明涉及具有磺酸盐基团的三联苯二卤化物单体及其制备方法。 更具体地，本发明涉及具有磺酸盐基团的三联苯二卤化物单体，其通过以下方法制备，所述方法包括通过四卤代苯和苯硼酸的Suzuki交叉偶联获得三联苯二卤化物衍生物，并且在三联苯的每个末端将引入磺酸基团引入苯环 二卤化物衍生物，所得单体能够通过亲核芳香取代（S N N Ar）聚合制备成具有优异离子传导性的聚合物电解质，由于两个卤素原子和两个导电磺酸基团的存在， 单体分子及其制备方法。

公开(公告)号：US20060292899A1

公开(公告)日：2006-12-28

申请号：US11442238

申请日：2006-05-30

Applicant: Kyoung-man Cho ,  Jae-suk Lee

Inventor： Kyoung-man Cho ,  Jae-suk Lee

IPC: H01R12/00

CPC classification number: H01R12/62 ,  H01R12/7094 ,  H01R12/714 ,  H01R13/2442 ,  H01R13/7033

Abstract: A connector, and a hard disk drive having the connector, the connector including connecting pins arranges so as to be spaced apart from one another; and a connecting member to contact the connecting pins and cause an electrical short in response to no external force being applied to the connecting pins; wherein the electrical short is removed in response to an external force being applied to the connecting pins. The connecting pins are moved so as not to contact the connecting member in response to an external force being applied to the connecting pins.

Abstract translation: 连接器和具有连接器的硬盘驱动器，连接器包括连接销布置成彼此间隔开; 以及连接构件，其接触所述连接销并且响应于没有外力施加到所述连接销而引起电短路; 其中响应于施加到所述连接销的外力来去除所述电短路。 连接销被移动以便响应于施加到连接销的外力而不接触连接构件。

公开(公告)号：US20060183878A1

公开(公告)日：2006-08-17

申请号：US11301144

申请日：2005-12-12

Applicant: Jae-Suk Lee ,  Kwan-Soo Lee

Inventor： Jae-Suk Lee ,  Kwan-Soo Lee

IPC: C08G14/02

CPC classification number: C08G65/4025

Abstract: The present invention relates to terphenyl dihydroxy monomers containing fluorine and fluorinated poly(arylene ether sulfide)s prepared by using the monomers, more particularly, terphenyl dihydroxy monomers containing both two hydroxy functional groups and fluorine and fluorinated poly(arylene ether sulfide)s prepared by an aromatic nucleophilic substitution polymerization (SNAr) using the monomers, which are thus useful as optical materials in the field of information telecommunications.

Abstract translation: 本发明涉及通过使用单体制备的含氟和氟化聚（亚芳基醚硫醚）的三联苯基二羟基单体，更具体地说，涉及含有两个羟基官能团的三联苯基二羟基单体和氟和氟化聚（亚芳基醚硫醚），其由 使用单体的芳族亲核取代聚合（S N N Ar），因此可用作信息通信领域的光学材料。

公开(公告)号：US20060138669A1

公开(公告)日：2006-06-29

申请号：US11254441

申请日：2005-10-20

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L23/48

CPC classification number: H01L23/53238 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices having a copper line layer and methods for manufacturing the same are disclosed. An illustrated semiconductor device comprises a damascene insulating layer having a contact hole, a barrier metal layer including a first ruthenium layer, a ruthenium oxide layer and a second ruthenium layer, a seed copper layer formed on the barrier metal layer, and a copper line layer made of a Cu—Ag—Au solid solution. A disclosed example method of manufacturing a semiconductor device reduces and/or prevents contact characteristic degradation of the barrier metal layer with the silicon substrate or the damascene insulating layer. In addition, by forming the copper line layer made of the Cu—Ag—Au solid solution, long term device reliability may be improved.

公开(公告)号：US07030005B2

公开(公告)日：2006-04-18

申请号：US11024731

申请日：2004-12-30

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L21/4763

CPC classification number: H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method for forming intermetal dielectric layer is disclosed including steps of: preparing a substrate with wiring on a lower insulating layer, the wiring having a plurality of separating portions; forming first and second water marks on the lower insulating layer located in the separating portions and on upper surfaces of the wiring; transforming the first and second water marks into first and second air bubbles, respectively; depositing a first insulating layer of lower dielectric constant on the whole surface of the substrate, and at the same time, forming first and second air gaps by growing said first and second air bubbles on and between the wirings, respectively; removing the upper portion of the first insulating layer to make open the second air gap; and depositing a second insulating layer of lower dielectric constant on the first insulating layer to fill the opened second air gap.

Abstract translation: 公开了形成金属间电介质层的方法，其包括以下步骤：在下绝缘层上制备具有布线的衬底，所述布线具有多个分离部分; 在位于分离部分和布线的上表面的下绝缘层上形成第一和第二水痕; 将第一和第二水痕分别转变为第一和第二气泡; 在衬底的整个表面上沉积具有较低介电常数的第一绝缘层，同时分别通过在布线之间和之间生长所述第一和第二气泡而形成第一和第二气隙; 去除第一绝缘层的上部以打开第二气隙; 以及在所述第一绝缘层上沉积具有较低介电常数的第二绝缘层以填充所述打开的第二气隙。

公开(公告)号：US20060002006A1

公开(公告)日：2006-01-05

申请号：US11151199

申请日：2005-06-14

Applicant: Jae-suk Lee

Inventor： Jae-suk Lee

IPC: G11B17/00

CPC classification number: G11B33/1466 ,  G11B25/043 ,  G11B33/08

Abstract: A hard disk drive having a housing including a base member, a cover member, a damping plate, and a buffer member. The base member supports a spindle motor for rotating a data storage disk and an actuator having a read/write head, with the cover member being attached to the base member to enclose the disk, the spindle motor, and the actuator. The damping plate is spaced a predetermined distance from a top surface of the cover member to form an air-gap. The buffer member is disposed between the cover member and the damping plate and along the circumference of the air-gap, with the buffer member being made of a material pervious to air but impervious/sealed to water, for example, polyurethane foam having a plurality of open-cells and closed-cells. Accordingly, even though air pressure varies, air pressures inside and outside the air-gap can be equalized.

Abstract translation: 一种具有壳体的硬盘驱动器，包括基座构件，盖构件，阻尼板和缓冲构件。 基座构件支撑用于旋转数据存储盘的主轴电机和具有读/写头的致动器，其中盖构件附接到基座构件以包围盘，主轴电机和致动器。 阻尼板与盖构件的顶表面隔开预定距离以形成气隙。 缓冲构件设置在盖构件和阻尼板之间并且沿着气隙的圆周设置，缓冲构件由可渗透空气的材料制成，但是不透水/密封到水，例如具有多个的聚氨酯泡沫 的开放细胞和闭孔细胞。 因此，即使空气压力变化，气隙内外的气压也可以相等。

公开(公告)号：US20050280123A1

公开(公告)日：2005-12-22

申请号：US11158465

申请日：2005-06-22

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/336 ,  H01L21/469 ,  H01L23/58

CPC classification number: H01L21/02164 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/2256 ,  H01L21/3144 ,  H01L21/31608 ,  H01L21/3185 ,  H01L27/14609 ,  H01L27/14689 ,  H01L29/6656 ,  H01L29/7833

Abstract: Semiconductor devices and methods of manufacturing the same are disclosed. In a disclosed method, a dangling bond in the active region(s) is removed by providing an enough H2 in the PMD liner layer and the interlayer insulating layer directly contacting the active regions, and then gradually diffusing the H2 in a subsequent heat treatment. The method includes forming a gate electrode having a side wall spacer, forming source and drain regions, forming a PMD liner layer by sequentially forming a SiO2:H layer, a SiON:H layer and a SiN:H layer above the gate electrode and the source and drain regions, forming an interlayer insulating layer above the PMD liner layer, and diffusing hydrogen in the PMD liner layer and the interlayer insulating layer to the source and drain region by N2 annealing or Ar annealing.

Abstract translation: 公开了半导体器件及其制造方法。 在所公开的方法中，通过在PMD衬垫层和与有源区直接接触的层间绝缘层中提供足够的H 2 N，然后逐渐扩散，去除有源区中的悬挂键 在随后的热处理中的H 2 N 2。 该方法包括形成具有侧壁间隔物的栅电极，形成源区和漏区，通过依次形成SiO 2 H层，SiON:H层和SiN：H层形成PMD衬层; H层，形成在PMD衬垫层上方的层间绝缘层，并将PMD衬层层和层间绝缘层中的氢扩散到源极和漏极区域N 2， / SUB退火或Ar退火。