公开(公告)号：US20060131605A1

公开(公告)日：2006-06-22

申请号：US11020507

申请日：2004-12-22

Applicant: Adrian Cogan ,  Jin Qiu ,  Richard Blanchard

Inventor： Adrian Cogan ,  Jin Qiu ,  Richard Blanchard

IPC: H01L29/74 ,  H01L23/62

CPC classification number: H01L29/66136 ,  H01L27/0255 ,  H01L29/861

Abstract: A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.

公开(公告)号：US20050220118A1

公开(公告)日：2005-10-06

申请号：US10501860

申请日：2003-01-23

Applicant: Jibin Ma ,  Jin Qiu ,  Shikui Guo

Inventor： Jibin Ma ,  Jin Qiu ,  Shikui Guo

IPC: H04L12/56 ,  H04L12/28

CPC classification number: H04L12/5601 ,  H04L2012/5607 ,  H04L2012/5656 ,  H04L2012/5671

Abstract: The present invention discloses a method for realize the AAL2 protocol layer, first, setting up a transmit buffering area for the storage of the transmitted data packet, and a receive buffering area for the deposition of the received data packet, accomplishing the AAL2 data exchange utilizing the above-mentioned buffer area arrow at the exchange node of the connection, and accomplishing the processing of adaptation layer protocol and the data transmission between the adaptation layer and application layer in end node; there are differences in Service Specific Segmentation and Reassembly sublayer SSSAR protocol layer for the voice package and the packet data package, which complete the exchanges between the AAL2 layers, and the method has improved the realization scheme of layer of AAL2 protocol further.

Abstract translation: 本发明公开了一种实现AAL2协议层的方法，首先建立发送数据包的存储发送缓冲区，以及接收数据包的接收缓冲区，利用AAL2数据交换实现 连接交换节点上的缓冲区箭头，完成适配层协议的处理以及端节点的适配层与应用层之间的数据传输; 对于语音包和分组数据包的服务特定分段和重组子层SSSAR协议层存在差异，完成了AAL2层之间的交换，该方法进一步改进了AAL2协议层的实现方案。

公开(公告)号：US06911891B2

公开(公告)日：2005-06-28

申请号：US10052667

申请日：2002-01-18

Applicant: Jin Qiu ,  Alexander H. Slocum ,  Jeffrey H. Lang ,  Ralf Struempler ,  Michael P. Brenner ,  Jian Li

Inventor： Jin Qiu ,  Alexander H. Slocum ,  Jeffrey H. Lang ,  Ralf Struempler ,  Michael P. Brenner ,  Jian Li

IPC: B81B3/00 ,  H01H1/00 ,  H01H1/24 ,  H01H50/00 ,  H01H59/00 ,  H01H61/00 ,  H01H37/52 ,  H01H37/54

CPC classification number: B81B3/0051 ,  B33Y70/00 ,  B33Y80/00 ,  B81B2201/016 ,  B81B2203/0109 ,  B81B2203/051 ,  H01H1/0036 ,  H01H1/24 ,  H01H50/005 ,  H01H59/0009 ,  H01H61/00 ,  H01H2001/0042 ,  H01H2061/006

Abstract: A bistable structure provided by the invention is characterized as including a deflection element that has mechanically constrained end points and a compliant span between the end points that is substantially free to deflect between two stable positions when a force is applied at a point along the span. The deflection element span is provided, as-fabricated, curved in one of the two stable positions and in a mechanically unstressed condition along the length of the span. The as-fabricated curve of the deflection element span includes a curve maxima at a point along the span length that is at least about ¼ of the span length from the end points of the span. The deflection element span is constrained to substantially prohibit development of a second bending mode that is characteristic for the span as the element deflects between the two stable positions.

Abstract translation: 由本发明提供的双稳态结构的特征在于包括一个偏转元件，该偏转元件具有机械约束的端点和端点之间的顺应跨度，当在沿跨度的点施加力时，基本上自由地在两个稳定位置之间偏转。 偏转元件跨度设置成沿着跨度的长度在两个稳定位置中的一个中并且以机械无应力状态弯曲。 偏转元件跨度的制造曲线包括沿着跨度长度的点处的曲线最大值，其距离跨度端点的跨度长度的至少约1/4。 偏转元件跨度被限制为基本上禁止当元件在两个稳定位置之间偏转时跨度的特征的第二弯曲模式的发展。

公开(公告)号：US08367451B2

公开(公告)日：2013-02-05

申请号：US12178563

申请日：2008-07-23

Applicant: Jin Qiu

Inventor： Jin Qiu

IPC: H01L21/00

CPC classification number: B81C1/00095 ,  B81B3/0072 ,  B81C2203/0728 ,  B81C2203/0771

Abstract: Methods and structures for fabricating MEMS devices on compliant layers are provided. In particular, disclosed are methods and structures that can include the use of a sacrificial layer composed of a material having material properties relative to one or more other layers. These methods and structures can reduce final device shape sensitivity to process parameters, deposition temperature differences, specific material, time, and/or geometry. Further, such methods and structures can improve the final as-built shape of released devices, reduce variability in the as-built shape, eliminate decoupling of the deposited layers from the substrate, and reduce variability across a product array, die, or wafer.

Abstract translation: 提供了在兼容层上制造MEMS器件的方法和结构。 特别地，公开了可以包括使用由具有相对于一个或多个其它层的材料性质的材料构成的牺牲层的方法和结构。 这些方法和结构可以减少对工艺参数，沉积温度差，特定材料，时间和/或几何形状的最终器件形状敏感性。 此外，这样的方法和结构可以改善释放装置的最终构造形状，减少所构造的形状的可变性，消除沉积的层与衬底的去耦合，并且减少跨越产品阵列，管芯或晶片的可变性。