公开(公告)号：US08487356B2

公开(公告)日：2013-07-16

申请号：US13307370

申请日：2011-11-30

Applicant: Jin seong Heo ,  Sun-ae Seo ,  Dong-chul Kim ,  Yun-sung Woo ,  Hyun-jong Chung

Inventor： Jin seong Heo ,  Sun-ae Seo ,  Dong-chul Kim ,  Yun-sung Woo ,  Hyun-jong Chung

IPC: H01L29/778 ,  H01L21/78 ,  H01L21/00

CPC classification number: H01L29/1606 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78645 ,  H01L29/78684

Abstract: The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel.

Abstract translation: 石墨烯装置可以包括在至少一个嵌入式栅极上的上部氧化物层，以及石墨烯通道和上部氧化物层上的多个电极。 至少一个嵌入式栅极可以形成在衬底上。 可以在多个电极上形成石墨烯通道，或者可以在石墨烯通道上形成多个电极。

公开(公告)号：US08436342B2

公开(公告)日：2013-05-07

申请号：US12654938

申请日：2010-01-08

Applicant: Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

Inventor： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

IPC: H01L51/52 ,  H01L51/56 ,  H01L33/00

CPC classification number: H01L27/3262 ,  H01L2251/305

Abstract: Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

Abstract translation: 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管，具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道，其具有比第二氧化物半导体层更高的载流子浓度，具有高电荷迁移率，并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层，具有稳定且均匀的功能特性。

公开(公告)号：US08421084B2

公开(公告)日：2013-04-16

申请号：US12926636

申请日：2010-12-01

Applicant: Jae-Wook Kang ,  Jin-Seong Park

Inventor： Jae-Wook Kang ,  Jin-Seong Park

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/12 ,  H01L21/00 ,  H01L21/84

CPC classification number: H01L27/3272 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78633 ,  H01L29/7869

Abstract: An organic light emitting display includes a gate electrode on a substrate, an active layer insulated from the gate electrode, source and drain electrodes that are insulated from the gate electrode and contact the active layer, an insulating layer between the active layer and the source and drain electrodes, a light blocking layer that is on the active layer and that blocks light of a predetermined wavelength from the active layer, and an organic light emitting device that is electrically connected to one of the source and drain electrodes.

Abstract translation: 有机发光显示器包括在基板上的栅电极，与栅电极绝缘的有源层，与栅电极绝缘并与有源层接触的源电极和漏极，活性层和源之间的绝缘层，以及 漏电极，有源层上的遮光层，阻挡来自有源层的预定波长的光;以及电连接到源电极和漏极之一的有机发光器件。

公开(公告)号：US20130065022A1

公开(公告)日：2013-03-14

申请号：US13589650

申请日：2012-08-20

Applicant: David SEO ,  Jin-seong HEO ,  Hyun-jong CHUNG ,  Hee-jun YANG ,  Seong-jun PARK ,  Hyun-jae SONG

Inventor： David SEO ,  Jin-seong HEO ,  Hyun-jong CHUNG ,  Hee-jun YANG ,  Seong-jun PARK ,  Hyun-jae SONG

IPC: B32B37/14 ,  B32B3/30 ,  B32B37/10 ,  B32B9/04

CPC classification number: H01L29/1606 ,  H01L21/2007 ,  Y10T156/10 ,  Y10T428/2457 ,  Y10T428/24612

Abstract: A method of transferring graphene includes patterning an upper surface of a substrate to form at least one trench therein, providing a graphene layer on the substrate, the graphene layer including an adhesive liquid thereon, pressing the graphene layer with respect to the substrate, and removing the adhesive liquid by drying the substrate.

Abstract translation: 转移石墨烯的方法包括图案化衬底的上表面以在其中形成至少一个沟槽，在衬底上提供石墨烯层，所述石墨烯层包括其上的粘合剂液体，相对于衬底压制石墨烯层，并且去除 粘合剂液体通过干燥基材。

公开(公告)号：US20130048951A1

公开(公告)日：2013-02-28

申请号：US13591732

申请日：2012-08-22

Applicant: Jin-Seong HEO ,  Hyun-jong CHUNG ,  Hyun-jae SONG ,  Seong-jun PARK ,  David SEO ,  Hee-jun YANG

Inventor： Jin-Seong HEO ,  Hyun-jong CHUNG ,  Hyun-jae SONG ,  Seong-jun PARK ,  David SEO ,  Hee-jun YANG

IPC: H01L29/78 ,  B82Y99/00

CPC classification number: H01L29/1606 ,  B82Y10/00 ,  H01L29/0895 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/78684

Abstract: According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the graphene layer, and a second electrode on a second region of the graphene layer. The semiconductor layer may be doped with one of an n-type impurity and a p-type impurity. The semiconductor layer may face the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. The second region of the graphene layer may be separated from the first region on the graphene layer.

Abstract translation: 根据示例性实施例，石墨烯切换装置具有可调屏障。 石墨烯开关装置可以包括栅极衬底，栅极衬底上的栅极电介质，栅极电介质上的石墨烯层，顺序地堆叠在石墨烯层的第一区域上的半导体层和第一电极，以及第二电极， 石墨烯层的第二区域。 半导体层可以掺杂有n型杂质和p型杂质中的一种。 半导体层可以面对栅极衬底，其中石墨烯层位于半导体层和栅极衬底之间。 石墨烯层的第二区域可以与石墨烯层上的第一区域分离。

公开(公告)号：US08373163B2

公开(公告)日：2013-02-12

申请号：US12453962

申请日：2009-05-28

Applicant: Chang-jung Kim ,  Sang-wook Kim ,  Jin-seong Park

Inventor： Chang-jung Kim ,  Sang-wook Kim ,  Jin-seong Park

IPC: H01L29/10

CPC classification number: H01L29/7869

Abstract: Disclosed are an oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may include a lanthanoid (Ln) added to zinc oxide (ZnO) and may be used as a channel material of the TFT.

Abstract translation: 公开了一种氧化物半导体和包括该氧化物半导体的薄膜晶体管（TFT）。 氧化物半导体可以包括添加到氧化锌（ZnO）中的镧系元素（Ln），并且可以用作TFT的沟道材料。

公开(公告)号：US20120330442A1

公开(公告)日：2012-12-27

申请号：US13391980

申请日：2010-01-15

Applicant: Jin-Seong Hwang ,  Jun-Young Lim ,  Mun-Seok Seo

Inventor： Jin-Seong Hwang ,  Jun-Young Lim ,  Mun-Seok Seo

IPC: G06F19/00

CPC classification number: D06F33/02 ,  D06F2202/04 ,  D06F2202/10 ,  D06F2202/12 ,  D06F2216/00 ,  D06F2226/00

Abstract: Disclosed is a control apparatus and method of a clothes treating machine. Power consumption can be expected or detected when an operation of the clothes treating apparatus is determined, and greenhouse gas emissions to an energy source or electricity prices according can be expected on the basis of power consumption. In addition, reasonable operations can be determined on the basis of recommended operation conditions provided by the clothes treating apparatus, and power consumption of the clothes treating machine, greenhouse gas emissions to an energy source or electricity prices can be easily calculated without providing an additional complicated power detection circuit.

Abstract translation: 公开了一种衣物处理机的控制装置和方法。 当确定衣物处理装置的操作时可以预期或检测到功率消耗，并且可以基于功率消耗预期到能量源或电价的温室气体排放。 此外，可以基于由衣物处理装置提供的推荐操作条件来确定合理的操作，并且可以容易地计算衣物处理机的功率消耗，温室气体排放到能源或电价，而不需要提供额外的复杂 电源检测电路。

公开(公告)号：US08247266B2

公开(公告)日：2012-08-21

申请号：US13102984

申请日：2011-05-06

Applicant: Jin-Seong Park ,  Kwang-Suk Kim ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Steve Y. G. Mo

Inventor： Jin-Seong Park ,  Kwang-Suk Kim ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Steve Y. G. Mo

IPC: H01L21/00

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm−3 by controlling an amount of Zr.

Abstract translation: 教导了使用氧化物半导体层作为有源层的薄膜晶体管（TFT），制造TFT的方法以及包括TFT的平板显示器（FPD）。 TFT包括形成在基板上的栅极电极，通过栅极绝缘层与栅极电绝缘的氧化物半导体层，以及包括沟道区域，源极区域和漏极区域的氧化物半导体层以及源极电极 以及分别与源极区域和漏极区域电接触的漏极电极。 氧化物半导体层由包含Zr的InZnO或IZO层（铟锌氧化物层）形成。 通过控制Zr量，将IZO层的载流子密度控制在1×1013〜1×1018＃cm -3。

公开(公告)号：US08223877B2

公开(公告)日：2012-07-17

申请号：US12481753

申请日：2009-06-10

Applicant: In-Kyu Lee ,  Jin-Seong Kim ,  Chae-Man Lim

Inventor： In-Kyu Lee ,  Jin-Seong Kim ,  Chae-Man Lim

IPC: H04B7/02 ,  H04L1/02

CPC classification number: H04L25/03171 ,  H04L1/0045 ,  H04L25/0232 ,  H04L25/067 ,  H04L2025/03426

Abstract: An apparatus and method for detecting a signal in a Multiple-Input Multiple-Output (MIMO) system are provided. The method includes filtering each stream of a received signal, acquiring a new search space by acquiring a set of candidates having reliability greater than a threshold with respect to each filtered stream, and detecting a signal for each stream of the new search space.

Abstract translation: 提供了一种用于检测多输入多输出（MIMO）系统中的信号的装置和方法。 该方法包括对接收到的信号的每个流进行滤波，通过相对于每个滤波的流获取具有大于阈值的可靠性的候选集合来获取新的搜索空间，以及检测新的搜索空间的每个流的信号。

公开(公告)号：US20120175595A1

公开(公告)日：2012-07-12

申请号：US13329842

申请日：2011-12-19

Applicant: Hyun-jong Chung ,  Jin-seong Heo ,  Hee-jun Yang ,  Sun-ae Seo ,  Sung-hoon Lee

Inventor： Hyun-jong Chung ,  Jin-seong Heo ,  Hee-jun Yang ,  Sun-ae Seo ,  Sung-hoon Lee

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/66477 ,  H01L29/42384 ,  H01L29/775 ,  H01L29/78684

Abstract: A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

Abstract translation: 石墨烯电子器件包括在衬底上的石墨烯通道层，石墨烯通道层的端部上的源电极和在石墨烯通道层的另一端部上的漏电极，石墨烯通道层上的栅极氧化物 源电极和漏电极以及栅极氧化物上的栅电极。 栅极氧化物具有与源电极和漏电极之间的石墨烯沟道层基本相同的形状。