METHOD OF CAPTURING MAGNETIC RESONANCE IMAGE AND MAGNETIC RESONANCE IMAGING APPARATUS USING THE SAME
    11.
    发明申请
    METHOD OF CAPTURING MAGNETIC RESONANCE IMAGE AND MAGNETIC RESONANCE IMAGING APPARATUS USING THE SAME 审中-公开
    采用磁共振图像和磁共振成像装置的方法

    公开(公告)号:US20130154639A1

    公开(公告)日:2013-06-20

    申请号:US13614327

    申请日:2012-09-13

    IPC分类号: G01R33/48 G01R33/34

    CPC分类号: G01R33/543

    摘要: A method captures a magnetic resonance image for increasing convenience of a user, and a magnetic resonance imaging (MRI) apparatus uses the method, which includes: obtaining shape information of a subject; adjusting a field of view (FoV) according to the shape information of the subject; setting a K-space corresponding to the adjusted FoV; and capturing the magnetic resonance image by using the set K-space.

    摘要翻译: 一种方法捕获磁共振图像以增加用户的便利性,并且磁共振成像(MRI)装置使用该方法,其包括:获得对象的形状信息; 根据被摄体的形状信息调整视野(FoV); 设置与调整后的FoV相对应的K空间; 并通过使用设定的K空间来捕获磁共振图像。

    Method and apparatus for controlling wavelength tuning of optical source for optical communication
    12.
    发明授权
    Method and apparatus for controlling wavelength tuning of optical source for optical communication 有权
    用于控制光通信光源波长调谐的方法和装置

    公开(公告)号:US07917040B2

    公开(公告)日:2011-03-29

    申请号:US11871357

    申请日:2007-10-12

    IPC分类号: H04B10/04

    摘要: A method and apparatus for controlling a wavelength tuning of an optical source in an optical communication system. An operating temperature of an optical source is controlled and monitored to shorten a wavelength tuning time of the optical source generated in an optical source generator. When the current operating temperature reaches a final target temperature, an operating current is supplied to the optical source generator, and transmission of the operating current to the optical source generator is controlled and monitored. When the operating current reaches a final operating current, the wavelength tuning of the optical source is terminated. The operating temperature is adjusted by distinguishing between a smaller amount of temperature change and a larger amount of temperature change to prevent oscillation at the point of reaching the final target temperature, thereby minimizing the time taken for the output wavelength tuning.

    摘要翻译: 一种用于控制光通信系统中的光源的波长调谐的方法和装置。 控制和监视光源的工作温度,以缩短在光源发生器中产生的光源的波长调谐时间。 当当前工作温度达到最终目标温度时,向光源发生器提供工作电流,并且控制和监视对光源发生器的工作电流的传输。 当工作电流达到最终工作电流时,光源的波长调谐终止。 通过区分较小量的温度变化和较大的温度变化量来调节工作温度,以防止在达到最终目标温度的时刻发生振荡,由此最小化输出波长调谐所需的时间。

    PZT thin films for ferroelectric capacitor and method for preparing the
same
    13.
    发明授权
    PZT thin films for ferroelectric capacitor and method for preparing the same 失效
    用于铁电电容器的PZT薄膜及其制备方法

    公开(公告)号:US5625529A

    公开(公告)日:1997-04-29

    申请号:US412043

    申请日:1995-03-28

    摘要: PZT ferroelectric thin films for capacitors comprise a combination of a donor dopant and an acceptor dopant in a total amount of about 0.1 to 8 mole percent of PZT, or Sc alone in an amount of about 0.1 to 5 mole percent. Nb or Ta is employed as a donor dopant, while Sc, Mg or Zn can be used as an acceptor dopant. The presence of a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, results in increased endurance. Fatigue cycles are increased on the order of about 10.sup.5 relative to dopant-free films. Doping with a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, reduces coercive field, allowing PZT films to switch at relatively low voltages. PZT thin films of a pure perovskite phase are obtained in which a pyrochlore phase is completely excluded. Pt may be used as an electrode material. The leakage current of PZT films doped with both the acceptor and donor elements are similar to the leakage current level of pure PZT thin films.

    摘要翻译: 用于电容器的PZT铁电薄膜包括总量为约0.1至8摩尔%的PZT或Sc单独的施主掺杂剂和受主掺杂剂的组合,其量为约0.1至5摩尔%。 Nb或Ta用作施主掺杂剂,而Sc,Mg或Zn可用作受主掺杂剂。 单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂两者的存在导致耐久性增加。 相对于不含掺杂剂的膜,疲劳循环增加约为约105。 用单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂掺杂减少矫顽场,允许PZT膜在相对低的电压下切换。 获得纯钙钛矿相的PZT薄膜,其中完全排除了烧绿石相。 Pt可以用作电极材料。 掺杂受体和施主元素的PZT膜的漏电流类似于纯PZT薄膜的漏电流水平。

    Preparation method for lead-titanium based thin film
    14.
    发明授权
    Preparation method for lead-titanium based thin film 失效
    铅钛基薄膜的制备方法

    公开(公告)号:US5637352A

    公开(公告)日:1997-06-10

    申请号:US539518

    申请日:1995-10-05

    CPC分类号: C07F7/003 C23C16/409

    摘要: An organometallic lead precursor, represented by following formula:L.sub.x.Pb(THD).sub.2 [I]wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R=H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.5 to 2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Pb at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point.Lead-titanium based thin films prepared from the precursor, display superior reproducibility and reliability.

    摘要翻译: 由下式表示的有机金属铅前体:Lx.Pb(THD)2 [I]其中L是选自NR 3(R = H,CH 3)气体和Cl 2气体的电子供体配体; THD表示2,2',6,6'-四甲基-3,5-庚二酮; 并且x在0.5至2的范围内,通过使气相电子给体在预定温度下流入含有双(2,2',6,6'-四甲基-3,5-庚二酮)Pb的起泡器中来制备, 原位合成一种加合物。 该前体在挥发性方面表现出显着的改善,并且在蒸发点处具有稳定性。 由前体制备的铅钛基薄膜显示出优异的再现性和可靠性。