公开(公告)号：US20120168904A1

公开(公告)日：2012-07-05

申请号：US13418472

申请日：2012-03-13

Applicant: Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

Inventor： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC: H01L29/92

CPC classification number: H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

Abstract: Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

Abstract translation: 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US08159012B2

公开(公告)日：2012-04-17

申请号：US12238822

申请日：2008-09-26

Applicant: Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

Inventor： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC: H01L27/108

CPC classification number: H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

Abstract: Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

Abstract translation: 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US20110014770A1

公开(公告)日：2011-01-20

申请号：US12591722

申请日：2009-11-30

Applicant: Ki-yeon Park ,  Cha-young Yoo ,  Jong-cheol Lee ,  Jun-noh Lee

Inventor： Ki-yeon Park ,  Cha-young Yoo ,  Jong-cheol Lee ,  Jun-noh Lee

IPC: H01G9/00 ,  H01L21/469

CPC classification number: H01G4/33 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45553 ,  H01G4/085 ,  H01G4/1209 ,  H01L21/02159 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31641

Abstract: A method of forming a dielectric thin film of a semiconductor device, the method including supplying a first nuclear atom precursor source and a second nuclear atom precursor source having different thermal decomposition temperatures to a substrate and forming a chemical adsorption layer including first nuclear atoms and second nuclear atoms on the substrate. A reactant including oxygen atoms may be supplied to the substrate on which the chemical adsorption layer is formed. An atomic layer including an oxide of the first nuclear atoms and the second nuclear atoms may be formed on the chemical adsorption layer.

Abstract translation: 一种形成半导体器件的电介质薄膜的方法，该方法包括向基片提供具有不同热分解温度的第一核原子前体源和第二核原子前体源，并形成包括第一核原子和第二核原子的化学吸附层 核原子在基底上。 可以将包含氧原子的反应物供给到其上形成有化学吸附层的基板。 可以在化学吸附层上形成包含第一核原子和第二核原子的氧化物的原子层。