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    SILICON CARBIDE SEMICONDUCTOR DEVICE COMPRISING SILICON CARBIDE LAYER AND METHOD OF MANUFACTURING THE SAME
    13.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE COMPRISING SILICON CARBIDE LAYER AND METHOD OF MANUFACTURING THE SAME 有权
    含有碳化硅层的硅碳化硅半导体器件及其制造方法

    公开(公告)号：US20090250705A1

    公开(公告)日：2009-10-08

    申请号：US12267040

    申请日：2008-11-07

    申请人： Tomokatsu WATANABE ,  Sunao Aya ,  Naruhisa Miura ,  Keiko Sakai ,  Shohei Yoshida ,  Toshikazu Tanioka ,  Yukiyasu Nakao ,  Yoichiro Tarui ,  Masayuki Imaizumi

    发明人： Tomokatsu WATANABE ,  Sunao Aya ,  Naruhisa Miura ,  Keiko Sakai ,  Shohei Yoshida ,  Toshikazu Tanioka ,  Yukiyasu Nakao ,  Yoichiro Tarui ,  Masayuki Imaizumi

    IPC分类号： H01L29/24 ,  H01L21/34

    CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828

    摘要： A p base ohmic contact of a silicon carbide semiconductor device consists of a p++ layer formed by high-concentration ion implantation and a metal electrode. Since the high-concentration ion implantation performed at the room temperature significantly degrades the crystal of the p++ layer to cause a process failure, a method for implantation at high temperatures is used. In terms of switching loss and the like of devices, it is desirable that the resistivity of the p base ohmic contact should be lower. In well-known techniques, nothing is mentioned on a detailed relation among the ion implantation temperature, the ohmic contact resistivity and the process failure. Then, in the ion implantation step, the temperature of a silicon carbide wafer is maintained in a range from 175° C. to 300° C., more preferably in a range from 175° C. to 200° C. The resistivity of the p base ohmic contact using a p++ region formed by ion implantation at a temperature in a range from 175° C. to 300° C. becomes lower than that in a case where the p++ region is formed by ion implantation at a temperature over 300° C. Further, this can avoid any process failure.

    摘要翻译： 碳化硅半导体器件的p基极欧姆接触由通过高浓度离子注入形成的p ++层和金属电极组成。 由于在室温下进行的高浓度离子注入使p ++层的晶体显着降低，导致处理失败，所以使用在高温下注入的方法。 在器件的开关损耗等方面，期望p基极欧姆接触的电阻率应该更低。 在众所周知的技术中，在离子注入温度，欧姆接触电阻率和工艺故障之间的详细关系中没有提及。 然后，在离子注入步骤中，碳化硅晶片的温度保持在175℃至300℃的范围内，更优选在175℃至200℃的范围内。 在175℃〜300℃的温度范围内通过离子注入形成的p ++区域的p基极欧姆接触变得低于在超过300°的温度下通过离子注入形成p ++区域的情况下的p基极欧姆接触 此外，这可以避免任何过程失败。

    RADIATION DETECTOR AND METHOD FOR PRODUCING THE SAME
    15.
    发明申请
    RADIATION DETECTOR AND METHOD FOR PRODUCING THE SAME 有权
    辐射检测器及其制造方法

    公开(公告)号：US20100224784A1

    公开(公告)日：2010-09-09

    申请号：US12782209

    申请日：2010-05-18

    申请人： Katsuhisa Homma ,  Hitoshi Chiyoma ,  Shinetsu Fujieda ,  Keiko Sakai ,  Masakuni Ikagawa ,  Akiko Suzuki

    发明人： Katsuhisa Homma ,  Hitoshi Chiyoma ,  Shinetsu Fujieda ,  Keiko Sakai ,  Masakuni Ikagawa ,  Akiko Suzuki

    IPC分类号： G01T1/20 ,  H01L21/56

    CPC分类号： G01T1/20

    摘要： According to one embodiment, a radiation detector includes, a substrate, a scintillator layer, a moistureproof body, and an adhesion layer. The substrate comprises a photoelectric conversion element. The scintillator layer is formed on the substrate and converts radiation into fluorescence. The moistureproof body comprises a flange portion in a periphery thereof, the moistureproof body being deep enough to contain at least the scintillator layer. The adhesion layer causes the substrate and the flange portion of the moistureproof body to adhere to each other in a sealed manner.

    摘要翻译： 根据一个实施例，辐射检测器包括基板，闪烁体层，防潮体和粘合层。 基板包括光电转换元件。 闪烁体层形成在衬底上并将辐射转化为荧光。 防潮体包括在其周边的凸缘部分，防潮体足够深以至少容纳闪烁体层。 粘合层使得基材和防潮体的凸缘部分以密封的方式相互粘合。

    RADIATION DETECTOR
    16.
    发明申请
    RADIATION DETECTOR 审中-公开
    辐射探测器

    公开(公告)号：US20090084961A1

    公开(公告)日：2009-04-02

    申请号：US12236884

    申请日：2008-09-24

    申请人： Junichi TONOTANI ,  Masatoshi HIGUCHI ,  Keiko SAKAI ,  Katsuhisa HOMMA ,  Atsuya YOSHIDA

    发明人： Junichi TONOTANI ,  Masatoshi HIGUCHI ,  Keiko SAKAI ,  Katsuhisa HOMMA ,  Atsuya YOSHIDA

    IPC分类号： G01T1/20

    CPC分类号： G01T1/2018

    摘要： A radiation detector includes an electrode substrate having plural photoelectric transfer elements which convert visible light into electrical signals, a scintillator layer formed on the electrode substrate and converting radial rays into visible light, and a protective film includes a drying agent film and a moisture-proof film. The drying agent film is formed on at least the scintillator layer. The moisture-proof film is formed on the drying agent film.

    摘要翻译： 辐射检测器包括具有将可见光转换为电信号的多个光电转移元件的电极基板，形成在电极基板上的闪烁体层，将径向射线转换为可见光，保护膜包括干燥剂膜和防潮层 电影。 至少在闪烁体层上形成干燥剂膜。 在干燥剂膜上形成防湿膜。