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14 条记录 (耗时 0.011 秒)

    Method of applying thin metal deposits to a substrate
    13.
    发明授权
    Method of applying thin metal deposits to a substrate 失效
    将薄金属沉积物应用于基底的方法

    公开(公告)号：US4297393A

    公开(公告)日：1981-10-27

    申请号：US125639

    申请日：1980-02-28

    申请人： Richard Denning ,  Mark A. Spak ,  Barry Polhemus

    发明人： Richard Denning ,  Mark A. Spak ,  Barry Polhemus

    IPC分类号： C23C18/28 ,  C23C3/02 ,  H01L21/288

    CPC分类号： C23C18/28

    摘要： A method of applying thin metal sensitizing deposits to the exposed silicon areas of a silicon substrate having areas of exposed silicon and silicon oxide, including the steps of immersing the silicon substrate in a basic, aqueous solution containing a metal salt of the metal to be deposited, particularly a nickel, cobalt, or platinum salt, and thereafter reducing the metal ion of the salt to the elemental metal by use of the exposed silicon as the reducing agent.

    摘要翻译： 将具有暴露的硅和氧化硅区域的硅衬底的暴露的硅区域施加薄金属敏化沉积物的方法，包括以下步骤：将硅衬底浸入含有待沉积金属的金属盐的碱性水溶液中 ，特别是镍，钴或铂盐，然后通过使用暴露的硅作为还原剂将盐的金属离子还原成元素金属。

    Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
    14.
    发明授权
    Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes 失效
    在半导体器件上限定绝缘层中的接触开口的方法，而不形成不期望的针孔

    公开(公告)号：US4174252A

    公开(公告)日：1979-11-13

    申请号：US928310

    申请日：1978-07-26

    申请人： Henry Kressel ,  Mark A. Spak

    发明人： Henry Kressel ,  Mark A. Spak

    IPC分类号： H01L21/033 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/306 ,  H01L21/314

    CPC分类号： H01L21/32134 ,  H01L21/033 ,  Y10S438/958

    摘要： A p-n junction silicon semiconductor device passivated with a first layer of oxygen-doped polycrystalline silicon and a second layer of silicon nitride, is treated to provide contact openings through to the silicon substrate by first depositing an undoped polycrystalline silicon layer over the silicon nitride layer, coating with photoresist, exposing and developing the photoresist to provide an opening to the polycrystalline silicon layer, etching through said latter layer with a particular etchant solution that etches large diameter openings at a faster rate than small diameter openings, and etching through the passivating layers whereby the desired contact opening is etched through to the substrate but pinhole openings less than about 2 microns in diameter in the photoresist layer are not propagated through the passivating layers.

    摘要翻译： 通过首先在氮化硅层上沉积未掺杂的多晶硅层，处理钝化了第一层氧掺杂多晶硅和第二氮化硅层的pn结硅半导体器件，以提供穿过硅衬底的接触开口， 用光致抗蚀剂涂覆，曝光和显影光致抗蚀剂以提供多晶硅层的开口，用特定的蚀刻剂溶液蚀刻通过所述后一层，其以比小直径开口更快的速率蚀刻大直径开口，并蚀刻穿过钝化层，由此 期望的接触开口被蚀刻到基底上，但光致抗蚀剂层中直径小于约2微米的针孔开口不会传播通过钝化层。