摘要:
A method for yield correlation for semiconductor chips, in accordance with the present invention, includes providing test data for a plurality of tests on each of a plurality of semiconductor chips. A global parameter is assigned to each chip as a quality measure based on the test data for that chip. Values for a plurality of parameter classes are determined, and each parameter class represents a parameter measured for each chip tested. A correlation between the values of the parameter classes and the global parameter values for the plurality of chips is then determined. The correlation for each of the parameter classes is compared to identify at least one parameter class, which detracts from chip yield.
摘要:
A method for providing specific test programs from a production test program for testing semiconductor devices, in accordance with the present invention, includes providing a semiconductor device to be tested by a tester and initiating a production test program. The production test program includes a plurality of program files and test code sequences. The production test program is held at a test which is to be extracted, and register information and settings are extracted from the tester for the test to be extracted. The register information and settings are stored in a storage file, and the storage file is assembled and translated to provide an executable test program for an extracted test for testing the semiconductor device or other semiconductor devices.
摘要:
A semiconductor device is described. A channel area is arranged in a semiconductor substrate between a first contact area and a second contact area. A first programmable structure includes a first control structure. The first programmable structure is arranged such that a conductivity of a first section of the channel area depends on a voltage applicable to the first control structure of the first programmable structure and on an information value stored in the first programmable structure. A second programmable structure includes a second control structure. The second programmable structure is arranged such that a conductivity of a second section of the channel area depends on a voltage applicable to the second control structure of the second programmable structure and on an information value stored in the second programmable structure. The first section and the second section of the channel area are electrically connected in series between the first contact area and the second contact area.
摘要:
A receiver circuit arrangement includes a receiver circuit an input for receiving an input signal an output for outputting an output signal and an inverter circuit with switching transistors. The input signal is fed to the receiver circuit. At least one control transistor is connected in series with the switching transistors. A control circuit is connected on the input side to a terminal for a reference voltage and on the output side to the control terminal of the control transistor of the inverter circuit. The control circuit is designed such that the control transistor is driven by the regulating switching circuit in the event of deviations of the reference voltage from a voltage value in a reference operating state with a control voltage that deviates with respect to the reference operating state.
摘要:
An integrated semiconductor memory includes programmable elements, which are arranged in a continuous region on a chip area of the integrated semiconductor memory. Operating parameters, for example, word line addresses of defective word lines are stored in the programmable elements in a compressed data format during the fabrication process of the integrated semiconductor memory. Upon activation of the integrated semiconductor memory, the compressed data are read out by a read-out circuit and fed to a decompression circuit. The decompression circuit generates, from a bit sequence of the compressed data with the aid of a decompression algorithm, a bit sequence of decompressed data which are evaluated by a control circuit. The storage of the operating parameters in the compressed data format and the arrangement of the programmable elements in a compact region significantly reduce the space requirement on the semiconductor chip.
摘要:
An integrated circuit includes a first and a second amplifier circuit (10, 20), which are in each case driven by an input signal (Vin) having a high and a low signal level and a reference signal (Vref) having a constant signal level and, on the output side (D11, D21) generate a first control signal (S1) and a second control signal (S2). The control signals (S1, S2) are generated independently of one another and are used to regulate a first controllable resistor (31) and a second controllable resistor (32) of a third amplifier circuit (30). Depending on the resistance value of the first and second controllable resistors (31, 32) of the third amplifier circuit, an output signal (Vout) that is amplified in comparison with the input signal (Vin) can be generated at an output terminal (A). The integrated circuit can be used as an input amplifier of an integrated semiconductor memory and permits an adaptive behavior of the input amplifier with regard to fluctuations of the average absolute input signal level.
摘要:
A semiconductor device is described. A channel area is arranged in a semiconductor substrate between a first contact area and a second contact area. A first programmable structure includes a first control structure. The first programmable structure is arranged such that a conductivity of a first section of the channel area depends on a voltage applicable to the first control structure of the first programmable structure and on an information value stored in the first programmable structure. A second programmable structure includes a second control structure. The second programmable structure is arranged such that a conductivity of a second section of the channel area depends on a voltage applicable to the second control structure of the second programmable structure and on an information value stored in the second programmable structure. The first section and the second section of the channel area are electrically connected in series between the first contact area and the second contact area.
摘要:
A device for reading out memory information storable in a memory has an integrator and a comparator. The memory provides, in a hold phase, a leakage current, and in a readout phase, a readout current. The readout current is dependent on the stored memory information. The integrator is adapted to integrate a quantity derived from the leakage current during the hold phase, and to provide a leakage voltage corresponding to an integrated leakage current. The integrator is further adapted to integrate a quantity derived from the readout current during the readout phase, and to provide a readout voltage corresponding to an integrated readout current. The comparator may compare the leakage voltage to the readout voltage and provide, in dependence on the comparison, a readout value corresponding to the memory information.
摘要:
An apparatus (1) for testing a memory module (2) suitable for exchanging electrical signals with a motherboard (10) contains a device (8a–8k) suitable for detecting the operating state of at least one semiconductor chip (26a–26m) of the module, which device comprises a first set of signal lines (8a–8k), a microcontroller (3) with a memory device (32) for storing the operating state, said microcontroller being electrically connected to the signal lines (8a–8k), a clock generator (5) suitable for generating an operating clock, said clock generator being electrically connected to the microcontroller (3), and a signal connection (13) suitable for communicating a signal for controlling access to the memory module (2) between the circuit board arrangement (10) and the microcontroller (3) and for communicating to the microcontroller (3) a signal for initiating a process of detecting the operating state.
摘要:
Method for fabricating a semiconductor memory device having auxiliary transistor structures which are required for lithography and etching processes. A protective structure for reducing leakage currents between gate conductor and doped zone is provided. The protective structure is formed as a region doped oppositely to the doped zone.