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    POWER SEMICONDUCTOR MODULE AND MANUFACTURING METHOD FOR POWER SEMICONDUCTOR MODULE
    11.
    发明申请
    POWER SEMICONDUCTOR MODULE AND MANUFACTURING METHOD FOR POWER SEMICONDUCTOR MODULE 有权

    公开(公告)号：US20220020651A1

    公开(公告)日：2022-01-20

    申请号：US17449692

    申请日：2021-10-01

    Applicant: NGK Electronics Devices, Inc. ,  NGK Insulators, Ltd.

    Inventor： Yuhji UMEDA ,  Yoshio TSUKIYAMA ,  Haruhiko ITO

    IPC: H01L23/10 ,  H01L23/373 ,  H01L23/053 ,  H01L23/31 ,  H01L23/00

    Abstract: A frame is made of a first material. An external terminal electrode is attached to the frame. A heat sink plate supports the frame and includes a mounting region in the frame. The heat sink plate is made of a non-composite material containing copper with purity of 95.0 weight percentage or more. A first adhesive layer bonds the frame and the heat sink plate to each other. The first adhesive layer is made of a second material different from the first material, and has a first composition. A power semiconductor element is mounted on the mounting region of the heat sink plate. A cover is attached to the frame to constitute a sealing space sealing the power semiconductor element without gross leak. A second adhesive layer bonds the frame and the cover to each other, and has a second composition different from the first composition of the first adhesive layer.

    METAL MEMBER AND PRODUCTION METHOD THEREFOR
    12.
    发明申请
    METAL MEMBER AND PRODUCTION METHOD THEREFOR 有权

    公开(公告)号：US20210404066A1

    公开(公告)日：2021-12-30

    申请号：US17447322

    申请日：2021-09-10

    Applicant: NGK Electronics Devices, Inc. ,  NGK Insulators, Ltd.

    Inventor： Shigeru YOSHIMURA

    IPC: C23C18/16 ,  H01L23/373 ,  H01L23/14 ,  H01L21/48 ,  C23C18/32 ,  C23C18/50 ,  C23C18/42

    Abstract: A metal member includes a metal substrate, a first intermediate plating layer, a second intermediate plating layer, and a precious metal plating layer. The metal substrate includes a surface constituted of a plurality of crystal grains. The first intermediate plating layer is directly formed on the plurality of crystal grains of the metal substrate, contains a nickel element, and is non-oriented with respect to each crystal orientation of the plurality of crystal grains of the metal substrate. The second intermediate plating layer is directly formed on the first intermediate plating layer. The precious metal plating layer is formed on the second intermediate plating layer.

    PACKAGE
    16.
    发明公开
    PACKAGE 审中-公开

    公开(公告)号：US20230335568A1

    公开(公告)日：2023-10-19

    申请号：US18334594

    申请日：2023-06-14

    Applicant: NGK ELECTRONICS DEVICES, INC. ,  NGK INSULATORS, LTD.

    Inventor： Atsushi MASE

    IPC: H01L27/146

    CPC classification number: H01L27/14618 ,  H01L27/14636

    Abstract: A package includes a mounting surface on which an electronic component is to be mounted, a cavity, and an attachment surface to which a lid is to be attached through an adhesive layer. The package includes: a bottom containing ceramics and having the mounting surface; and a frame containing ceramics and having the attachment surface. The attachment surface of the frame includes an inner end adjacent to the cavity and an outer end opposite to the inner end in at least one cross-sectional view spanning an inside and an outside of the cavity, the attachment surface having a protruding shape protruding in a thickness direction. At least one of the inner end or the outer end is made lower than a most protruding portion of the protruding shape by 10 μm or more.

    PACKAGE
    17.
    发明申请
    PACKAGE 有权

    公开(公告)号：US20220344241A1

    公开(公告)日：2022-10-27

    申请号：US17700720

    申请日：2022-03-22

    Applicant: NGK ELECTRONICS DEVICES, INC. ,  NGK INSULATORS, LTD.

    Inventor： Noriyasu YAMAMOTO ,  Yoshikazu MIHARA ,  Naoya SHIRAI

    IPC: H01L23/373 ,  H01L23/367

    Abstract: A heat sink includes first to fifth layers. The first layer supports a frame made of ceramics, is made of copper, and has a thickness t1. The second layer is laminated to the first layer, is made of molybdenum, and has a thickness t2. The third layer is laminated to the second layer, is made of copper, and has a thickness t3. The fourth layer is laminated to the third layer, is made of molybdenum, and has a thickness t4. The fifth layer is laminated to the fourth layer, is made of copper, and has a thickness t5. A formula 3≤t1/t5≤5 is satisfied. A formula 3≤t3/t5≤5 is satisfied.

    PACKAGE, AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR MODULE
    18.
    发明申请
    PACKAGE, AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR MODULE 有权

    公开(公告)号：US20220077033A1

    公开(公告)日：2022-03-10

    申请号：US17455709

    申请日：2021-11-19

    Applicant: NGK Electronics Devices, Inc. ,  NGK Insulators, Ltd.

    Inventor： Yoshio TSUKIYAMA ,  Teppei YAMAGUCHI

    IPC: H01L23/495 ,  H01L21/48

    Abstract: An external terminal electrode is attached to a frame, and the frame contains a first resin, and has a first adhered surface. A heat sink plate supports the frame, has an unmounted region where a power semiconductor element is to be mounted within the frame in plan view, is made of metal, and has a second adhered surface. An adhesive layer contains a second resin different from the first resin, and adheres the first adhered surface of the frame and the second adhered surface of the heat sink plate to each other. One of the first and second adhered surfaces includes a flat portion and a protruding portion. The protruding portion protrudes from the flat portion and opposes the other one of the first adhered surface and the second adhered surface with the adhesive layer therebetween.

    CERAMIC SINTERED BODY AND SUBSTRATE FOR SEMICONDUCTOR DEVICE
    19.
    发明申请
    CERAMIC SINTERED BODY AND SUBSTRATE FOR SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210261473A1

    公开(公告)日：2021-08-26

    申请号：US17317986

    申请日：2021-05-12

    Applicant: NGK INSULATORS, LTD. ,  NGK ELECTRONICS DEVICES, INC.

    Inventor： Yuji UMEDA ,  Jyunji OOGAMI

    IPC: C04B37/02 ,  C04B35/119 ,  H01L23/373

    Abstract: In a ceramic sintered body, the Zr content is 17.5 mass %-23.5 mass % in terms of ZrO2, the Hf content is 0.3 mass %-0.5 mass % in terms of HfO2, the Al content is 74.3 mass %-80.9 mass % in terms of Al2O3, the Y content is 0.8 mass %-1.9 mass % in terms of Y2O3, the Mg content is 0.1 mass %-0.8 mass % in terms of MgO, the Si content is 0.1 mass %- and 1.5 mass % in terms of SiO2, and the Ca content is 0.03 mass %-0.35 mass % in terms of CaO. The total content of Na and K is 0.01 mass %-0.10 mass %, when the K content is converted to K2O and the Na content is converted to Na2O. The balance content is 0.05 mass % or less in terms of oxide.

    CERAMIC SINTERED BODY AND SUBSTRATE FOR SEMICONDUCTOR DEVICES
    20.
    发明申请
    CERAMIC SINTERED BODY AND SUBSTRATE FOR SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20210246072A1

    公开(公告)日：2021-08-12

    申请号：US17242645

    申请日：2021-04-28

    Applicant: NGK INSULATORS, LTD. ,  NGK ELECTRONICS DEVICES, INC.

    Inventor： Yuji UMEDA ,  Hiroshi KOUNO

    IPC: C04B35/119 ,  C04B35/03 ,  C04B37/02 ,  H01L23/15

    Abstract: The ceramic sintered body contains Zr, Al, Y, and Mg. A Zr content is 7.5 mass % or more and 23.5 mass % or less in terms of ZrO2. An Al content is 74.9 mass % or more and 91.8 mass % or less in terms of Al2O3. A Y content is 0.41 mass % or more and 1.58 mass % or less in terms of Y2O3. A Mg content is 0.10 mass % or more and 0.80 mass % or less in terms of MgO. A ZrO2 crystal phase as a crystal phase has a monoclinic phase and a tetragonal phase as crystal structures. When a thermal aging treatment is performed for 100 hours in an environment of 180 degrees C., a ratio of a peak intensity of the monoclinic phase to a sum of peak intensities of the monoclinic phase and the tetragonal phase is 15% or less in the X-ray diffraction pattern.

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