Abstract:
Described herein is a force attenuator for a force sensor. The force attenuator can linearly attenuate the force applied on the force sensor and therefore significantly extend the maximum sensing range of the force sensor. The area ratio of the force attenuator to the force sensor determines the maximum load available in a linear fashion.
Abstract:
Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
Abstract:
Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.
Abstract:
Described herein is a MEMS force sensor with stress concentration design. The stress concentration can be performed by providing slots, whether through or blind, and/or selective thinning of the substrate. The MEMS force sensor is in chip scale package with solder bumps or metal pillars and there are sensing elements formed on the sensor substrate at the stress concentrate area. The stress concentration can be realized through slots, selective thinning and a combination of both.
Abstract:
An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.
Abstract:
Described herein is a MEMS force sensor with stress concentration design. The stress concentration can be performed by providing slots, whether through or blind, and/or selective thinning of the substrate. The MEMS force sensor is in chip scale package with solder bumps or metal pillars and there are sensing elements formed on the sensor substrate at the stress concentrate area. The stress concentration can be realized through slots, selective thinning and a combination of both.
Abstract:
Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including a sensor die and a strain transfer layer. The MEMS force sensor employs piezoresistive or piezoelectric strain gauges for strain sensing where the strain is transferred through the strain transfer layer, which is disposed on the top or bottom side of the sensor die. In the case of the top side strain transfer layer, the MEMS force sensor includes mechanical anchors. In the case of the bottom side strain transfer layer, the protection layer is added on the top side of the sensor die for bond wire protection.
Abstract:
Described herein is a ruggedized wafer level microelectromechanical (“MEMS”) force sensor including a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.
Abstract:
An example force sensor module for a touch-sensitive electronic device can include a force sensor, a bias assembly and an opposing bias assembly that is coupled to the bias assembly. The bias assembly can have a top wall and a plurality of side walls extending from the top wall. The top and side walls can define a chamber. The force sensor can be arranged between the bias assembly and the opposing bias assembly within the chamber. Additionally, the bias and opposing bias assemblies can be configured to apply a preload force to the force sensor, which is approximately equal to a spring force exerted between the bias and opposing bias assemblies.
Abstract:
A microelectromechanical (“MEMS”) load sensor device for measuring a force applied by a human user is described herein. In one aspect, the load sensor device has a contact surface in communication with a touch surface which communicates forces originating on the touch surface to a deformable membrane, on which load sensor elements are arranged, such that the load sensor device produces a signal proportional to forces imparted by a human user along the touch surface. In another aspect, the load sensor device has an overload protection ring to protect the load sensor device from excessive forces. In another aspect, the load sensor device has embedded logic circuitry to allow a microcontroller to individually address load sensor devices organized into an array. In another aspect, the load sensor device has electrical and mechanical connectors such as solder bumps designed to minimize cost of final component manufacturing.