公开(公告)号：US08153524B2

公开(公告)日：2012-04-10

申请号：US12711373

申请日：2010-02-24

Applicant: Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

Inventor： Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

IPC: H01L21/44

CPC classification number: H01L21/76826 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76864 ,  Y10S438/906

Abstract: During the formation of complex metallization systems, a conductive cap layer may be formed on a copper-containing metal region in order to enhance the electromigration behavior without negatively affecting the overall conductivity. At the same time, a thermo chemical treatment may be performed to provide superior surface conditions of the sensitive dielectric material and also to suppress carbon depletion, which may conventionally result in a significant variability of material characteristics of sensitive ULK materials.

Abstract translation: 在形成复杂的金属化系统期间，可以在含铜金属区域上形成导电覆盖层，以增强电迁移行为，而不会不利地影响总导电性。 同时，可以进行热化学处理以提供敏感电介质材料的优异的表面条件并且还抑制碳消耗，这常常导致敏感的ULK材料的材料特性的显着变化。

公开(公告)号：US20110049727A1

公开(公告)日：2011-03-03

申请号：US12854441

申请日：2010-08-11

Applicant: Oliver Aubel ,  Frank Feustel ,  Christian Hennesthal

Inventor： Oliver Aubel ,  Frank Feustel ,  Christian Hennesthal

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/02074 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a complex metallization system, the probability of dielectric breakdown may be reduced by vertically separating a critical area of high electric field strength and an area of reduced dielectric strength of the interlayer dielectric material. For this purpose, the interlayer dielectric material may be recessed after forming the metal regions and/or the metal regions may be increased in height and the corresponding recess may be refilled with an appropriate dielectric material.

Abstract translation: 在复杂的金属化系统中，可以通过垂直分离高电场强度的关键区域和层间介电材料的降低的介电强度的面积来降低电介质击穿的可能性。 为此，层间介电材料可以在形成金属区域之后凹陷，和/或金属区域的高度可以增加，并且相应的凹部可以用合适的介电材料重新填充。

公开(公告)号：US20100221911A1

公开(公告)日：2010-09-02

申请号：US12711373

申请日：2010-02-24

Applicant: Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

Inventor： Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

IPC: H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76864 ,  Y10S438/906

Abstract: During the formation of complex metallization systems, a conductive cap layer may be formed on a copper-containing metal region in order to enhance the electromigration behavior without negatively affecting the overall conductivity. At the same time, a thermo chemical treatment may be performed to provide superior surface conditions of the sensitive dielectric material and also to suppress carbon depletion, which may conventionally result in a significant variability of material characteristics of sensitive ULK materials.

Abstract translation: 在形成复杂的金属化系统期间，可以在含铜金属区域上形成导电覆盖层，以增强电迁移行为，而不会不利地影响总导电性。 同时，可以进行热化学处理以提供敏感电介质材料的优异的表面条件并且还抑制碳消耗，这常常导致敏感的ULK材料的材料特性的显着变化。

公开(公告)号：US20110156858A1

公开(公告)日：2011-06-30

申请号：US12910946

申请日：2010-10-25

Applicant: Jens Poppe ,  Oliver Aubel ,  Christian Hennesthal ,  Holger Pagel ,  Andreas Kurz

Inventor： Jens Poppe ,  Oliver Aubel ,  Christian Hennesthal ,  Holger Pagel ,  Andreas Kurz

IPC: H01H37/76

CPC classification number: H01L23/5256 ,  G11C17/16 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Metal fuses in semiconductor devices may be formed on the basis of additional mechanisms for obtaining superior electromigration in the fuse bodies. To this end, the compressive stress caused by the current-induced metal diffusion may be restricted or reduced in the fuse body, for instance, by providing a stress buffer region and/or by providing a dedicated metal agglomeration region. The concept may be applied to the metallization system and may also be used in the device level, when fabricating the metal fuse in combination with high-k metal gate electrode structures.

Abstract translation: 可以基于用于在保险丝体中获得优异的电迁移的附加机构来形成半导体器件中的金属熔丝。 为此，例如通过提供应力缓冲区域和/或通过提供专用的金属附聚区域，可以限制或减小由电流引起的金属扩散引起的压缩应力。 该概念可以应用于金属化系统，并且当与高k金属栅电极结构组合制造金属熔丝时也可以在器件级中使用。

公开(公告)号：US20100134125A1

公开(公告)日：2010-06-03

申请号：US12620664

申请日：2009-11-18

Applicant: Oliver Aubel ,  Frank Feustel ,  Torsten Schmidt

Inventor： Oliver Aubel ,  Frank Feustel ,  Torsten Schmidt

IPC: G01R31/26

CPC classification number: H01L22/34

Abstract: In a test structure for determining dielectric breakdown events of a metallization system of semiconductor devices, a built-in compliance functionality may allow reliable switching off of the test voltage prior to causing high leakage currents, which may conventionally result in significant damage. Consequently, further failure analysis may be possible after the occurrence of a dielectric breakdown event.

Abstract translation: 在用于确定半导体器件的金属化系统的绝缘击穿事件的测试结构中，内置的兼容性功能可以允许在引起高泄漏电流之前可靠地关断测试电压，这可能常常导致显着的损坏。 因此，在电介质击穿事件发生之后，进一步的故障分析可能是可能的。

公开(公告)号：US20100133700A1

公开(公告)日：2010-06-03

申请号：US12624517

申请日：2009-11-24

Applicant: Thomas Werner ,  Oliver Aubel ,  Frank Feustel

Inventor： Thomas Werner ,  Oliver Aubel ,  Frank Feustel

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832 ,  H01L23/522 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a sophisticated metallization system, enhanced electromigration behavior may be accomplished by incorporating electromigration barriers into metal lines after a given distance, which may be accomplished by providing an increased width in order to obtain an enhanced average grain size in the intermediate metal regions of increased lateral width. Consequently, the electromigration induced material diffusion may encounter an overall increased grain size along the entire depth of the metal lines, thereby resulting in a significantly reduced electromigration effect and thus enhanced reliability of the critical metal lines.

Abstract translation: 在复杂的金属化系统中，增强的电迁移行为可以通过在给定距离之后将电迁移屏障并入金属线中来实现，这可以通过提供增加的宽度来实现，以便在增加的侧向的中间金属区域中获得增强的平均晶粒尺寸 宽度。 因此，电迁移诱导的材料扩散可能沿着金属线的整个深度遇到总体增加的晶粒尺寸，从而导致显着降低的电迁移效应，从而提高关键金属线的可靠性。