Dynamic loop compensator for continuous mode power converters
    11.
    发明授权
    Dynamic loop compensator for continuous mode power converters 失效
    连续模式功率转换器的动态环路补偿器

    公开(公告)号:US5646513A

    公开(公告)日:1997-07-08

    申请号:US401943

    申请日:1995-03-10

    IPC分类号: H02M3/156 H02M3/335

    CPC分类号: H02M3/156

    摘要: This invention is directed toward a loop compensator which dynamically changes the compensation break points as a function of duty cycle, input voltage and output load current to insure system loop stability. The system identifier of the dynamic loop compensator identifies the converter circuit topology to which it is connected and relays corresponding circuit identification signals to a digital controller. Based on the identification signals, the digital controller implements one of three compensation algorithms that dynamically changes the compensation break points and consequently insures closed loop stability. Based upon system condition signals and one of the three compensation algorithms, the digital controller changes the compensation break points by producing variable frequency clock signals which are input into a bank of capacitors in a switching capcitor error amplifier network. In turn, the clock signals determine the effective resistance of the capacitors in the capacitor bank and accordingly change the location of the poles and zeros of the compensator thereby allowing the compensator to counteract the dynamically changing system.

    摘要翻译: 本发明涉及一种环路补偿器,其根据占空比,输入电压和输出负载电流动态地改变补偿断点,以确保系统回路的稳定性。 动态环路补偿器的系统标识符识别与其连接的转换器电路拓扑,并将相应的电路识别信号中继到数字控制器。 基于识别信号,数字控制器实现三种补偿算法之一,动态地改变补偿断点,从而确保闭环稳定性。 基于系统状态信号和三种补偿算法之一,数字控制器通过产生可变频率时钟信号来改变补偿中断点,该可变频率时钟信号被输入到开关电容误差放大器网络中的一组电容器中。 反过来,时钟信号决定了电容器组中的电容器的有效电阻,从而改变了补偿器的极点和零点的位置,从而允许补偿器抵消动态变化的系统。

    Non-volatile memory utilizing a thin film, floating gate, amorphous
transistor
    12.
    发明授权
    Non-volatile memory utilizing a thin film, floating gate, amorphous transistor 失效
    非易失性存储器利用薄膜,浮栅,非晶晶体管

    公开(公告)号:US5523970A

    公开(公告)日:1996-06-04

    申请号:US260941

    申请日:1994-06-16

    IPC分类号: G11C16/04 G11C11/34

    CPC分类号: G11C16/0433

    摘要: A memory controller generates control and address signal for accessing a non-volatile memory having a plurality of addressable cells. Each cell of the non-volatile memory includes a floating gate transistor (e.g., Q15) capable of storing charge (representing a binary 1 or 0) for extended, although not indefinite, periods of time. To refresh any charge that leaks off the floating gate, refresh circuitry (e.g., Q17-Q19) is provided to restore the charge on the gate to its original logical state. This refresh circuitry may be activated at "power-up." Each of the transistors in the memory are preferably thin film, amorphous silicon, "N" type transistors, including the floating gate transistor.

    摘要翻译: 存储器控制器产生用于访问具有多个可寻址单元的非易失性存储器的控制和地址信号。 非易失性存储器的每个单元包括能够存储电荷(表示二进制1或0)的浮动栅极晶体管(例如,Q15),用于延长但尽管不是无限期的时间段。 为了刷新从浮动栅极泄漏的任何电荷,提供刷新电路(例如,Q17-Q19)以将门上的电荷恢复到其原始逻辑状态。 该刷新电路可以在“上电”时被激活。 存储器中的每个晶体管优选是薄膜,非晶硅,“N”型晶体管,包括浮栅晶体管。

    Non-volatile register system utilizing thin-film floating-gate amorphous
transistors
    13.
    发明授权
    Non-volatile register system utilizing thin-film floating-gate amorphous transistors 失效
    利用薄膜浮栅非晶体晶体管的非易失性寄存器系统

    公开(公告)号:US5452250A

    公开(公告)日:1995-09-19

    申请号:US261356

    申请日:1994-06-14

    CPC分类号: G11C19/28

    摘要: A shift register comprises a plurality of amorphous silicon thin-film transistors configured in a plurality of register cells through which data is shifted through a plurality of amorphous silicon thin-film floating-gate transistors. In the event power is cutoff or lost, the floating gate transistors non-volatilely store the data which can be recovered or restored when power is subsequently turned on. Each cell comprises two stages in which data signals are written before being input into the next stage and next cell. A clock generator receives clocking signals for controlling the shifting of data through the register.

    摘要翻译: 移位寄存器包括配置在多个寄存器单元中的多个非晶硅薄膜晶体管,通过该多个寄存器单元,数据通过多个非晶硅薄膜浮栅晶体管偏移。 在断电或丢失电源的情况下,浮动栅极晶体管非易失地存储随后接通电源时可恢复或恢复的数据。 每个单元包括在输入到下一个单元和下一个单元之前写入数据信号的两个阶段。 时钟发生器接收时钟信号,用于控制数据通过寄存器的移位。

    Battery powered magnetic pen with time out to prevent accidental battery
discharge
    14.
    发明授权
    Battery powered magnetic pen with time out to prevent accidental battery discharge 失效
    电池供电磁笔超时,以防止意外的电池放电

    公开(公告)号:US5355100A

    公开(公告)日:1994-10-11

    申请号:US3084

    申请日:1993-01-11

    IPC分类号: G06F3/041 G06F1/32 H03B1/00

    CPC分类号: G06F1/3228

    摘要: A battery-powered magnetic pen has an oscillator for generating a magnetic field at a contact frequency and a proximity frequency. The oscillator is connected to a resettable timer. The pen also includes a tip switch that is actuated in response to the pen being brought into engagement with an object and disengaged from the object. The tip switch is connected to a pulse generator and to the oscillator. Each time the pen is brought into engagement with an object, the pulse generator resets the timer to initiate the timing of a time out period. Assuming the oscillator is off, the first time the pen contacts an object, the resetting causes the oscillator to be turned on. So long as the oscillator is on, the opening and closing of the tip switch causes the oscillator to switch between the contact frequency and the proximity frequency. Should the timer reach the end of a predetermined time out period, the oscillator is shut off. Thus, if the tip switch is continuously actuated for the time out period, such as might occur due to improper storage of the pen, the oscillator is shut off to prevent the battery from becoming discharged.

    摘要翻译: 电池供电的磁笔具有用于以接触频率和接近频率产生磁场的振荡器。 振荡器连接到可复位定时器。 该笔还包括一个尖端开关,其响应于笔与物体接合并与物体脱离而被致动。 尖端开关连接到脉冲发生器和振荡器。 每次笔与物体接合时,脉冲发生器复位定时器以启动超时周期的定时。 假设振荡器关闭,笔首次接触物体时,复位将使振荡器打开。 只要振荡器打开,尖端开关的打开和关闭就会使振荡器在接触频率和接近频率之间切换。 如果定时器到达预定的超时周期结束,则振荡器被切断。 因此,如果尖端开关连续致动超时期,例如可能由于笔的不正确存放而发生,则切断振荡器以防止电池放电。

    Bandgap reference voltage generator
    15.
    发明授权
    Bandgap reference voltage generator 失效
    带隙参考电压发生器

    公开(公告)号:US4396883A

    公开(公告)日:1983-08-02

    申请号:US333957

    申请日:1981-12-23

    IPC分类号: G05F3/26 G05F3/20

    CPC分类号: G05F3/265

    摘要: A bandgap reference voltage generator consists of a plurality of transistors with the same geometry. This circuit provides a stable temperature-compensated low reference voltage on the order of two volts.

    摘要翻译: 带隙参考电压发生器由具有相同几何形状的多个晶体管组成。 该电路提供了大约2伏特的稳定的温度补偿低参考电压。