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公开(公告)号：US5920086A
公开(公告)日：1999-07-06
申请号：US972980
申请日：1997-11-19
Applicant: Roger Morton MacFarlane , James Anthony Misewich , Sanjay Sethi , Sandip Tiwari
Inventor： Roger Morton MacFarlane , James Anthony Misewich , Sanjay Sethi , Sandip Tiwari
CPC classification number: H01L33/26
Abstract: A device for generating radiant energy comprising a first electrode, a second electrode spaced apart from said first electrode, a material disposed between and in electrical communication with first and second electrodes, which emits radiant energy upon activation. This material is a rare earth metal oxide or a rare earth metal halide.
Abstract translation: 一种用于产生辐射能的装置，包括第一电极，与所述第一电极间隔开的第二电极，设置在第一和第二电极之间并与之电连通的材料，其在激活时发射辐射能。 该材料是稀土金属氧化物或稀土金属卤化物。
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公开(公告)号：US5508543A
公开(公告)日：1996-04-16
申请号：US236751
申请日：1994-04-29
Applicant: Allan M. Hartstein , Michael A. Tischler , Sandip Tiwari
Inventor： Allan M. Hartstein , Michael A. Tischler , Sandip Tiwari
IPC: H01L21/8247 , H01L29/49 , H01L29/788 , H01L29/792 , H01L29/76
CPC classification number: H01L29/4975 , H01L29/49 , H01L29/4916 , H01L29/4966 , H01L29/7883
Abstract: A floating gate is inserted into the gate stack of an EEPROM cell. For an N channel EEPROM device, the floating gate is composed of a material having a conduction band edge (or fermi energy in the case of a metal or composite that includes a metal) at least one and preferably several kT electron volts below the conduction band edge of the channel region. The floating gate material thus has a larger electron affinity than the material of the channel region. This allows the insulator separating the floating gate and the channel to be made suitable thin (less than 100 angstroms) to reduce the writing voltage and to increase the number of write cycles that can be done without failure, without having charge stored on the floating gate tunnel back out to the channel region during read operations. For a P channel EEPROM device, the floating gate is composed of a material having a valence band edge (or fermi energy in the case of a metal or a composite that includes a metal) at least one and preferably several kT (eV) above the valence band edge of the channel region.
Abstract translation: 浮动栅极插入EEPROM单元的栅极堆叠中。 对于N沟道EEPROM器件，浮置栅极由具有导带边缘的材料（或在包含金属的金属或复合材料的情况下的费米能量）组成，其至少一个且优选地在导带之下几个kT电子伏特 通道区域的边缘。 浮栅材料因此具有比沟道区的材料更大的电子亲和力。 这允许将浮动栅极和沟道分离成绝缘体（小于100埃）以减小写入电压并增加可以在没有故障的情况下完成的写入周期数，而不会在浮置栅极上存储电荷 在读取操作期间隧道返回到通道区域。 对于P沟道EEPROM器件，浮动栅极由具有价带边缘（或金属或包含金属的复合材料的情况下的费米能量）的材料组成，至少一个且优选地几个kT（eV） 通道区域的价带边缘。
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公开(公告)号：US4987095A
公开(公告)日：1991-01-22
申请号：US207700
申请日：1988-06-15
Applicant: John Batey , Sandip Tiwari , Steven L. Wright
Inventor： John Batey , Sandip Tiwari , Steven L. Wright
IPC: H01L29/78 , H01L21/203 , H01L21/205 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/336 , H01L29/267 , H01L29/43
CPC classification number: H01L29/66522 , H01L21/28264 , H01L21/314 , H01L29/267 , H01L29/432 , Y10S148/149 , Y10S438/933 , Y10S438/958
Abstract: Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a stabilized reconstruction. An elemental semiconductor layer is deposited epitaxially in-situ with the compound semiconductor layer which unpins the surface Fermi level. A layer of insulator material is then deposited on the elemental semiconductor layer by PECVD. In one embodiment, the compound semiconductor is GaAs and the elemental semiconductor is Si. The insulator material is a layer of high quality SiO.sub.2. A metal gate is deposited on the SiO.sub.2 layer to form an MOS device. The epitaxial GaAs layer has a density of states which permits the interface Fermi level to be moved through the entire forbidden energy gap. In another embodiment, the SiO.sub.2 deposition completely consumes the interface Si layer so that the resulting MOS device comprises SiO.sub.2 directly overlying the GaAs layer.
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公开(公告)号：US4849802A
公开(公告)日：1989-07-18
申请号：US233851
申请日：1988-08-16
Applicant: Thomas N. Jackson , Masanori Murakami , William H. Price , Sandip Tiwari , Jerry M. Woodall , Steven L. Wright
Inventor： Thomas N. Jackson , Masanori Murakami , William H. Price , Sandip Tiwari , Jerry M. Woodall , Steven L. Wright
IPC: H01L29/45
CPC classification number: H01L29/452
Abstract: In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials and small amounts of indium as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto doped GaAs wafers. The contact resistance less than 1.0 ohm millimeter was obtained after annealing at 800.degree. C. and the resistance did not increase after subsequent prolonged annealing at 400.degree. C.
Abstract translation: 在半导体器件中，使用耐火材料和少量的铟作为接触材料制造具有低耐III-V化合物半导体衬底的接触。 通过将Mo，Ge和W与少量的In沉积到掺杂的GaAs晶片上形成接触材料。 800℃退火后获得小于1.0欧姆毫米的接触电阻，在400℃下经过长时间的退火后，电阻不增加。
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公开(公告)号：US08974775B2
公开(公告)日：2015-03-10
申请号：US13343188
申请日：2012-01-04
Applicant: Anubhav Saxena , Alok Sarkar , Sandip Tiwari
Inventor： Anubhav Saxena , Alok Sarkar , Sandip Tiwari
CPC classification number: C08G77/26 , A01N25/10 , A01N25/24 , A01N25/30 , A61K8/894 , A61K8/895 , A61K8/898 , A61K8/899 , A61K2800/10 , A61Q19/00 , C08G77/12 , C08G77/14 , C08G77/20 , C08G77/24 , C08G77/28 , C08G77/46 , C09D5/14 , C09D5/1675 , C09D183/06 , C09D183/08 , C09D183/12
Abstract: There is provided herein a functionalized ionic silicone composition comprising a silicone of the formula (I): M1aM2bM3cD1dD2eD3fT1gT2hT3iQj (I) which contains a monovalent radical bearing ion-pairs and having the formula (II): -A-Ix−Mny+; where A is a spacing group having at least 2 spacing atoms selected from a divalent hydrocarbon or hydrocarbonoxy group, where I is an ionic group such as sulfonate —SO3−, carboxylate —COO−, phosphonate —PO32− group and phosphate —OPO32−, where M is hydrogen or a cation independently selected from alkali metals, alkali earth metals, transition metals, metals, quaternary ammonium and phosphonium groups; or, zwitterions having the formula (III): —R′—NR″2+—R′″—I (III) where I is defined as above, and where the subscript a, b, c, d, e, f, g, h, i, j are zero or positive subject to the following limitations: 2≦a+b+c+d+e+f+g+h+i+j≦6000, b+e+h>0 and c+f+i>0.
Abstract translation: 本文提供了包含式（I）的硅氧烷：M1aM2bM3cD1dD2eD3fT1gT2hT3iQj（I）的官能化离子硅氧烷组合物，其含有带有离子对的一价基团并具有式（II）：-A-Ix-Mny +; 其中A是具有选自二价烃或烃氧基的至少2个间隔原子的间隔基团，其中I是离子基团，例如磺酸酯-SO 3 - ，羧酸酯-COO-，膦酸酯-PO 32 - 基团和磷酸酯-OPO 32 - 其中M是氢或独立地选自碱金属，碱土金属，过渡金属，金属，季铵和鏻基的阳离子; 或者具有式（III）的两性离子：-R'-NR“2 + -R'” - I（III）其中I如上定义，并且其中下标a，b，c，d，e，f， 受限于以下限制：2＆nlE; a + b + c + d + e + f + g + h + i + j＆nlE; 6000，b + e + h> 0和c + f + i> 0。
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Patent Agency Ranking
公开(公告)号：US08893310B2
公开(公告)日：2014-11-18
申请号：US13539778
申请日：2012-07-02
Applicant: Mark C. Reuter , Brian A. Bryce , Bojan R. Ilic , Sandip Tiwari
Inventor： Mark C. Reuter , Brian A. Bryce , Bojan R. Ilic , Sandip Tiwari
Abstract: A probe for scanned probe microscopy is provided. The probe includes a cantilever beam and a tip. The cantilever beam extends along a generally horizontal axis. The cantilever beam has a crystal facet surface that is oriented at a tilt angle with respect to the generally horizontal axis. The tip projects outwardly from the crystal facet surface.
Abstract translation: 提供扫描探针显微镜探针。 探头包括悬臂梁和尖端。 悬臂梁沿着大致水平的轴线延伸。 悬臂梁具有相对于大致水平轴线倾斜倾斜的晶面表面。 尖端从晶面表面向外突出。
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17.发明申请公开(公告)号：US20140017188A1
公开(公告)日：2014-01-16
申请号：US13734308
申请日：2013-01-04
Applicant: Alok Sarkar , Anubhav Saxena , Sandip Tiwari , Benjamin Falk , Anne Dussaud
Inventor： Alok Sarkar , Anubhav Saxena , Sandip Tiwari , Benjamin Falk , Anne Dussaud
CPC classification number: A61K8/899 , A61K8/896 , A61K2800/10 , A61Q1/04 , A61Q5/06 , A61Q5/12 , A61Q17/04 , A61Q19/00
Abstract: A personal care composition includes at least one end-functionalized ionic silicone and at least one film-forming agent.
Abstract translation: 个人护理组合物包括至少一种末端官能化的离子硅氧烷和至少一种成膜剂。
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公开(公告)号：US08539611B1
公开(公告)日：2013-09-17
申请号：US13547378
申请日：2012-07-12
Applicant: Mark C. Reuter , Brian A. Bryce , Bojan R. Ilic , Sandip Tiwari
Inventor： Mark C. Reuter , Brian A. Bryce , Bojan R. Ilic , Sandip Tiwari
IPC: G01Q60/38 , H01L21/306 , B82Y40/00
Abstract: A method of creating a probe for scanned probe microscopy is disclosed. The method includes providing a wafer having a support wafer layer and a device layer. The method includes masking the wafer with a masking layer. The method includes removing a portion of the masking layer at the device layer. The method includes etching the wafer along the portion of the masking layer that has been removed to create a crystal facet surface that is oriented at a tilt angle. The method includes epitaxially growing a tip along the crystal facet surface.
Abstract translation: 公开了一种创建用于扫描探针显微镜的探针的方法。 该方法包括提供具有支撑晶片层和器件层的晶片。 该方法包括用掩模层掩蔽晶片。 该方法包括在器件层处去除掩模层的一部分。 该方法包括沿着被去除的掩模层的部分蚀刻晶片以产生以倾斜角定向的晶面表面。 该方法包括沿着晶面表面外延生长尖端。
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公开(公告)号：US20130172193A1
公开(公告)日：2013-07-04
申请号：US13343188
申请日：2012-01-04
Applicant: Anubhav Saxena , Alok Sarkar , Sandip Tiwari
Inventor： Anubhav Saxena , Alok Sarkar , Sandip Tiwari
IPC: C08G77/28
CPC classification number: C08G77/26 , A01N25/10 , A01N25/24 , A01N25/30 , A61K8/894 , A61K8/895 , A61K8/898 , A61K8/899 , A61K2800/10 , A61Q19/00 , C08G77/12 , C08G77/14 , C08G77/20 , C08G77/24 , C08G77/28 , C08G77/46 , C09D5/14 , C09D5/1675 , C09D183/06 , C09D183/08 , C09D183/12
Abstract: There is provided herein a functionalized ionic silicone composition comprising a silicone of the formula (I): M1aM2bM3cD1dD2eD3fT1gT2hT3iQj (I) which contains a monovalent radical bearing ion-pairs and having the formula (II): -A-Ix-Mny+; where A is a spacing group having at least 2 spacing atoms selected from a divalent hydrocarbon or hydrocarbonoxy group, where I is an ionic group such as sulfonate —SO3−, carboxylate —COO−, phosphonate —PO32− group and phosphate —OPO32−, where M is hydrogen or a cation independently selected from alkali metals, alkali earth metals, transition metals, metals, quaternary ammonium and phosphonium groups; or, zwitterions having the formula (III): —R′—NR″2+—R′″—I (III) where I is defined as above, and where the subscript a, b, c, d, e, f, g, h, i, j are zero or positive subject to the following limitations: 2≦a+b+c+d+e+f+g+h+i+j≦6000, b+e+h>0 and c+f+i>0.
Abstract translation: 本文提供了包含式（I）的硅氧烷：M1aM2bM3cD1dD2eD3fT1gT2hT3iQj（I）的官能化离子硅氧烷组合物，其含有带有离子对的一价基团并具有式（II）：-A-Ix-Mny +; 其中A是具有选自二价烃或烃氧基的至少2个间隔原子的间隔基团，其中I是离子基团，例如磺酸酯-SO 3 - ，羧酸酯-COO-，膦酸酯-PO 32 - 基团和磷酸酯-OPO 32 - 其中M是氢或独立地选自碱金属，碱土金属，过渡金属，金属，季铵和鏻基的阳离子; 或者具有式（III）的两性离子：-R'-NR''2 + -R“'-I（III）其中I如上所定义，其中下标a，b，c，d，e， 受限于以下限制，f，g，h，i，j为零或正数：2 @ a + b + c + d + e + f + g + h + i + j @ 6000，b + e + h> 0 和c + f + i> 0。
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公开(公告)号：US20070148194A1
公开(公告)日：2007-06-28
申请号：US11606641
申请日：2006-11-29
Applicant: Mansoor Amiji , Sandip Tiwari
Inventor： Mansoor Amiji , Sandip Tiwari
IPC: A61K9/00
CPC classification number: A61K9/1075 , A61K9/0095
Abstract: An oil-in-water nanoemulsion delivery system that includes at least one oil having a concentration of greater than or equal to 2% (w/w) of at least one polyunsaturated fatty acid, preferably of the omega-3 or omega-6 family, is disclosed. The delivery system further includes at least one emulsifier and also an aqueous phase. Preferably, one or more hydrophobic therapeutic, monitoring and/or diagnostic agents are dispersed in the oil phase. The nanoemulsions may optionally contain other conventional pharmaceutical aids such as stabilizers, preservatives, buffering agents, antioxidants, polymers, proteins and charge inducing agents. The invention also relates to a process for preparing the nanoemulsions and to their use in the oral, parenteral, opthalmic, nasal, rectal or topical delivery of hydrophobic therapeutic, monitoring or diagnostic agents.
Abstract translation: 包含至少一种浓度大于或等于2％（w / w）的至少一种多不饱和脂肪酸，优选ω-3或ω-6家族的油的水包油纳米乳剂递送系统 ，被披露。 递送系统还包括至少一种乳化剂和水相。 优选地，将一种或多种疏水治疗，监测和/或诊断剂分散在油相中。 纳米乳剂可以任选地含有其它常规药物辅助剂，例如稳定剂，防腐剂，缓冲剂，抗氧化剂，聚合物，蛋白质和电荷诱导剂。 本发明还涉及制备纳米乳剂的方法及其在口服，肠胃外，眼内，鼻腔，直肠或局部递送疏水性治疗，监测或诊断剂中的用途。
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