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    Unpinned oxide-compound semiconductor structures and method of forming same
    2.
    发明授权
    Unpinned oxide-compound semiconductor structures and method of forming same 失效
    未固定的氧化物 - 半导体结构及其形成方法

    公开(公告)号：US5086321A

    公开(公告)日：1992-02-04

    申请号：US592611

    申请日：1990-10-04

    申请人： John Batey ,  Sandip Tiwari ,  Steven L. Wright

    发明人： John Batey ,  Sandip Tiwari ,  Steven L. Wright

    IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/336 ,  H01L29/267 ,  H01L29/43

    CPC分类号： H01L29/66522 ,  H01L21/28264 ,  H01L21/314 ,  H01L29/267 ,  H01L29/432

    摘要： Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a stabilized reconstruction. An elemental semiconductor layer is deposited epitaxially in situ with the compound semiconductor layer which unpins the surface Fermi level. A layer of insulator material is then deposited on the elemental semiconductor layer by PECVD. In one embodiment, the compound semiconductor is GaAs and the elemental semiconductor is Si. The insulator material is a layer of high quality SiO.sub.2. A metal gate is deposited on the SiO.sub.2 layer to form an MOS device. The epitaxial GaAs layer has a density of states which permits the interface Fermi level to be moved through the entire forbidden energy gap. In another embodiment, the SiO.sub.2 deposition completely consumes the interface Si layer so that the resulting MOS device comprises SiO.sub.2 directly overlying the GaAs layer.

    摘要翻译： 公开了未连接的外延金属氧化物半导体结构，并描述了制造这种结构的方法。 通过MBE生长化合物半导体的外延层，这导致形成具有稳定重建的光滑表面。 原位沉积元素半导体层，其中化合物半导体层取代了表面费米能级。 然后通过PECVD将绝缘体材料层沉积在元素半导体层上。 在一个实施例中，化合物半导体是GaAs，元素半导体是Si。 绝缘材料是一层高质量的SiO2。 金属栅极沉积在SiO 2层上以形成MOS器件。 外延GaAs层具有允许接口费米能级移动通过整个禁止能隙的状态密度。 在另一个实施例中，SiO 2沉积完全消耗界面Si层，使得所得的MOS器件包括直接覆盖GaAs层的SiO 2。

    Thermally stable low resistance contact
    3.
    发明授权
    Thermally stable low resistance contact 失效
    耐热稳定的低电阻接触

    公开(公告)号：US4849802A

    公开(公告)日：1989-07-18

    申请号：US233851

    申请日：1988-08-16

    申请人： Thomas N. Jackson ,  Masanori Murakami ,  William H. Price ,  Sandip Tiwari ,  Jerry M. Woodall ,  Steven L. Wright

    发明人： Thomas N. Jackson ,  Masanori Murakami ,  William H. Price ,  Sandip Tiwari ,  Jerry M. Woodall ,  Steven L. Wright

    IPC分类号： H01L29/45

    CPC分类号： H01L29/452

    摘要： In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials and small amounts of indium as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto doped GaAs wafers. The contact resistance less than 1.0 ohm millimeter was obtained after annealing at 800.degree. C. and the resistance did not increase after subsequent prolonged annealing at 400.degree. C.

    摘要翻译： 在半导体器件中，使用耐火材料和少量的铟作为接触材料制造具有低耐III-V化合物半导体衬底的接触。 通过将Mo，Ge和W与少量的In沉积到掺杂的GaAs晶片上形成接触材料。 800℃退火后获得小于1.0欧姆毫米的接触电阻，在400℃下经过长时间的退火后，电阻不增加。

    Compound semiconductor interface control
    10.
    发明授权
    Compound semiconductor interface control 失效
    复合半导体接口控制

    公开(公告)号：US4843450A

    公开(公告)日：1989-06-27

    申请号：US874738

    申请日：1986-06-16

    申请人： Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall ,  Steven L. Wright

    发明人： Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall ,  Steven L. Wright

    IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L29/45 ,  H01L29/47 ,  H01L29/51 ,  H01L29/78

    CPC分类号： H01L29/513 ,  H01L21/28264 ,  H01L21/31654 ,  H01L29/456 ,  H01L29/475 ,  H01L29/51

    摘要： Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

    摘要翻译： 通过在半导体的表面上提供不含阴离子物质的阳离子氧化物以实现平带性能并且将一些阴离子物质局部包含在屏障中来实现费米能级钉扎问题的控制和化合物半导体中的平带表面性能的产生 性能，使得氧化物和金属功能响应性在MOSFET，MESFET和不同功能金属FET结构中的结构和性能方面是可用的。 阳离子氧化镓通过照射期间的氧化物生长和用氧化水冲洗而在GaAs上产生。 氧化用于产生阴离子和阳离子物质，而漂洗过程选择性地除去所有阴离子物质。